v-band 中文意思是什麼

v-band 解釋
v波段
  • v :
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. According to statistics parameters of the typical clouds over xi ' an region and cloud data obtained from the global distribution of cloud cover under the auspices of world meteorological organization, for xi ' an region typical cloud, the parameters of khragian - mazin cloud drop size distribution are obtained. based on xi ' an cloud water content profile, on earth - space paths, attenuation due to cloud are calculated by means of the k - m distribution. it is shown that the attenuation induced by cloud are taken into account at ka - at elevation angle smaller than 30 and v - band paths

    第三，根據西安地區氣象觀測數據，討論了西安典型雲的宏觀和微觀物理特性；根據西安典型雲的觀測結果和世界氣象組織提供的數據，得到西安典型雲的k - m雲滴譜參數；並根據西安地區雲的液水含量，計算了地一空路徑上雲的衰減，結果表明，在v波段和仰角小於30度的ka波段路徑，雲的衰減需加以考慮。
  4. Varshni, y. p. " band - to - band radiative recombination in groups iv, vi, and iii - v semiconductors ( i ). " phys. stat. sol. 19 ( 1967 ) : 459 - 514

    一篇完整描述在半導體中光學再結合過程的論文，主要強調放射性再結合。
  5. For parameter a, there is a close relationship exist between a ( 9, sr ) in two different radar incident angle that can be expressed as : with considering the effects of soil texture, we get the final expression of the inversion model : where mv ( t1 ), mv ( t2 ) is volumetric soil moisture content in two different temp, c, d is soil type related parameters, and v ( t1 ), s ( t2 ) is coresponding bare soil radar backscattering coefficients. inversion results show that for the c band hh polarized radarsat scansar data with a range of incidence angle from 20 to 40, the soil moisture change value can be derived with an acceptable accuracy using the above model. the temporal and spatial soil moisture change patterns are associated with rainfall and vegetation cover, as well as the soil hydraulic characteristics

    利用最新發展的電磁波散射模型研究了不同植被覆蓋地表雷達波對地表土壤水分的敏感性，建立了半經驗植被雷達後向散射模型; 2 ） .研究發現在農作物等矮小植被覆蓋地表，植被層直接後向散射與植被類型相關，且在植被生長期，雷達後向散射系數對植被含水量的敏感性要高於對植被高度變化的敏感性; 3 ） .解決了單參數雷達地表土壤水分反演問題中，雷達入射角和地表粗糙度的影響這一難點問題; 4 ） .利用土壤介電模型校正了不同土壤類型對反演地表土壤體積含水量的影響; 5 ） .在以上成果基礎上，建立了完整的單參數雷達地表土壤水分變化探測反演演算法，經地表驗證，模型反演地表土壤水分變化值的精度為rmse = 0
  6. We select fpga of type xc3s200 as hardware to design the coder and display the hardware resources inside, moreover study the method and steps of designing dsp, based on fpga, by using system generator, finally, it emphasizes the design process of multi - band excitation vocoder. we can work out the module of high pass filter and the module of low pass filter, module of divide frame, module of keynote rough estimate, module of keynote fine estimate, module of band - separated v / u judgment / verdict and module of band - separated amplitude estimate, by using simulink, ise and system generator

    本文選用型號為xc3s200的fpga作為設計編碼器的核心硬體，介紹了其內部所含的硬體資源，並研究了利用systemgenerator基於fpga設計dsp的方法和步驟，最後，本文把重點放在多帶激勵語音編碼器的設計上，利用simulink ， ise和systemgenerator分別設計其中的高通低通濾波器模塊、分幀疊加模塊、基音粗估模塊、基音精細估計模塊、分帶v / u判決模塊、分帶幅度估計模塊。
  7. This paper studies the band percolation of the models of the triangle lattice and the hexagonal lattice. before we study the models of the triangle lattice and the hexagonal lattice, we will introduce period. let g = ( vc, ec ) be a connected graph, we write vg for the set of vertices of g and egfor the set of its edges, u e vc is a vertex, and v is the coordinate vector

    在介紹平面正三角形和正六邊形點格的邊滲流模型之前我們先引入周期的概念：設g = （ v _ g ， e _ g ）為連通圖其中v _ g ， e _ g分別為圖g的頂點集和邊集， u v _ g為的頂點， v為平面的坐標向量。
  8. The matlab program is used to reconstruct the image of objects and by several ways of digital image - processing such as band - pass filtering and v - filtering, the quality of reconstruction image is greatly improved

    利用帶阻濾波和v型濾波等數字圖像處理方法削弱了零級衍射斑的影響，提高了再現像質量。
  9. The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers

    本文通過光吸收、光熒光、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後光學性能和缺陷形態變化，以及ni ~ +注入對不同摻雜單晶al _ 2o _ 3結構和光學性能的影響，得到以下結果： （ 1 ） ysz注量達到10 ~ （ 16 ） cm ~ （ - 2 ）時，開始出現由f型和v型色心重疊而產生的吸收帶，與x射線、中子輻照相比，重離子輻照產生了更為復雜的缺陷復合體而導致吸收峰紅移。
  10. Fixed radio systems - point - to - multipoint antennas - antennas for point - to - multipoint fixed radio systems in the 3 ghz to 11 ghz band v. 1. 2. 2

    固定無線電系統.點對多點天線.在3 - 11ghz頻帶范圍上運行的點對多點固定無線電系統用天線
  11. Furthermore, it is indicated by the analysis that high - pass, band - pass, wavelet filtering and v - filtering are superior to the former image processing

    同時指出相比于以往的圖像處理方法，高通濾波處理、再現圖像的帶通與v型濾波及小波濾波具有更大的優勢。
  12. Aiming at the scheme of the signal electromagnetic environment simulator of the wireless communication system, the mission of this project is to design and realize the conversion of high speed parallel signal to serial signal and conversion of high speed digital signal to analog signal. the signal comes from the v / uhf wave band of the background simulator

    本課題的任務是針對通信信號電磁環境模擬器系統的方案要求，設計實現背景信號模擬器v uhf波段後端高速信號的復接與d a轉換，為后級的頻率綜合器的信號頻譜搬移提供了基本信號。
  13. The new vibrational infrared absorption band at about 485cm - 1 was annealed at about 400. it was difficult to annealing v - o complex in fast neutron irradiated si under 600 for 1h

    同時快中子輻照后硅中產生v - o復合體等缺陷，在低於600 、 1小時的退火也難以消除，表明快中子輻照直拉硅中的氧相關缺陷更加復雜。
  14. For the first time, the energy band configuration of p - si / n - bn heterojunctions were studied and drawn up. the study of the current - voltage ( i - v ) characteristics showed significant rectifying behavior with reverse saturation current of 3. 7 x 10 ~ 7a, breakdown voltage of 30v and turn on voltage of 14v. the capacity - voltage ( c - v ) characteristics are studied too

    研究了p - si / n - bn異質結的-特性，測試表明異質結具有明顯的整流特性，反向飽和電流3 . 7x10 「 』 a ，擊穿電壓高達30v導通電壓為14v ，應用p七en異質結能帶圖對其卜v特性做出了定性解釋。
  15. The light - induced - electrons were mainly on conduction band, voo / vo and vo / v energy level. the electrons under 0 _ ( 2 ) / 0 _ ( 2 ) were not useful to photocatalysis

    和v口v能級之上，位於吸附態02 / 02 『能級以下的光生電子對光催化沒有貢獻。
  16. After having the keynote cycle, it separately processes harmonic waves of speech band ; whereafter takes v / u judgement / verdict and amplitude estimate to each band

    得到基音周期后，對語音幀頻帶按基音頻率的諧波進行分帶處理，並對每個帶進行v / u判決和幅度估計。
  17. V band up - converter plays an important role in the isl system

    V波段上變頻組件是毫米波星間鏈路系統中的重要部件。
  18. V band couplings for ducting and piping. profile dimensions

    導管和管道用形帶連接器.外形尺寸
  19. In the high frequency c - v experiments, the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states. the deep interface states were simply studied by using photo excitation

    在無光照條件下，比較了n型和p型sicmos的不同特點，對其深耗盡特徵和p型sicmos的平帶電壓作了討論和解釋。
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