v-bias 中文意思是什麼
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And that the bias - magnetic is direct ratio with relative v - s difference, and is inverse ratio with circuit resistance
得出偏磁大小與相對伏秒差成正比，與迴路電阻成反比。 -
It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad
當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。 -
We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5
研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。 -
Devr - v series high - temperature reverse bias burn - in system
Devr - v系列高溫反偏老化系統 -
The induced formation and motion of copper steps on the surface of cu covered with glycine occur in the area where has been scanned by scanning tunneling microscope with higher negative bias voltage v
2 . 5v的條件下使用掃描隧道顯微鏡stm掃描吸附有甘氨酸的cu 111表面，在掃描區域內原有銅臺階的形狀發生了變化並產生了新的銅臺階。 -
In view of the very small leakage currents in the blocking state ( reverse bias ) and the small voltage in the conducting state ( forward bias ) as compared to the operating voltage and currents of the circuit in which the diode is used, the i - v characteristics for the diode can be idealized
與二極體的工作電流和電壓相比，在阻斷（截止）狀態下漏電流很小，在導通狀態下電壓比較小，因此二極體的電流-電壓（伏安）特性可以理想化。
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