v-junction 中文意思是什麼

v-junction 解釋
v型接頭
  • v :
  • junction : n. 1. 接合,連接,連絡。2. 接合點,交叉點,(河流的)匯合處,(鐵道的)聯軌點。3. 【電學】中繼線。4. 【物理學】接頭,結。
  1. House junction boxes up to 1000 v ; dimensions

    以下的用戶接線盒.尺寸
  2. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先,介紹了國內外太陽能電池的研究現狀及應用情況;其次,運用太陽能電池基本原理討論影響電池轉換效率的因素,分析了級聯電池的伏安特性;隨后,討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念,研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程,解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題;然後總結了級聯電池的后工藝製作;最後,研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝,設計並安裝完成新型聚光太陽能電池組件。
  3. Heterojunctions : conduction normal to junction : i - v models and characteristics. theory of graded layers ; creation of internal carrier - specific fields

    垂直於接面的電流傳導:電流-電壓模型與特性。漸變層理論;內部載子規?電場的產生。
  4. The section of castle peak road v new ting kau from its eastern junction

    新汀九段由其與青山公路
  5. These results show that the dc i - v curves of series arrays emerged some transition location and the ic decreased at the same time, but the dc i - v curves of parallel arrays were similar to what the single josephson junction ' s was

    由計算結果可看出,串聯陣列的直流i - v特性曲線上出現了多個轉變點,臨界電流也有所降低,而並聯陣列的直流i - v特性曲線和單個約瑟夫森結的直流i - v曲線類似。
  6. House junction boxes up to 1000 v ; inner design for distribution cable nyy and house junction cable nyy

    最高可達1kv的住宅接線盒.第10部分: nyy配電電纜和nyy
  7. House junction boxes up to 1000 v ; inner design for distribution cable nkba and house junction cable nycy

    最高可達1kv的住宅接線盒.第4部分: nkba配電電纜和nyc
  8. House junction boxes up to 1000 v ; inner design for distribution cable nkba and house junction cable nkba

    最高可達1kv的住宅接線盒.第2部分: nkba配電電纜和nkb
  9. House junction boxes up to 1000 v ; inner design for distribution cable nakley and house junction cable nycy

    最高可達1kv的住宅接線盒.第6部分: nakley配電電纜和n
  10. House junction boxes up to 1000 v ; installation instruction for distribution cable nyy and house junction cable nyy

    最高可達1kv的住宅接線盒.第11部分: nyy配電電纜和nyy
  11. House junction boxes up to 1000 v ; installation instructions for distribution cable nkba and house junction cable nkba

    最高可達1kv的住宅接線盒.第3部分: nkba配電電纜和nkb
  12. House junction boxes up to 1000 v ; installation instructions for distribution cable nkba and house junction cable nycy

    最高可達1kv的住宅接線盒.第5部分: nkba配電電纜和nyc
  13. Discussion is made on photocurrent output, injection current output and zero current output for photoreceiving pn junction by means of i - v equation of photoreceiving pn junction. further survey is carried out on physical elements of the injection photodetector followed by description of some experiment subjects

    本文推導金屬球的雷達散射截面,同時討論金屬球散射的三個區域,金屬球本身是一個良好的雷達目標,同時又是測量目標雷達截面的參考標準,因此還研究了金屬球的尺寸、導電性能和球殼的厚度,給出了測量結果
  14. House junction boxes up to 1000 v ; installation instruction for distribution cable nycwy and house junction cable nycy

    最高可達1kv的住宅接線盒.第9部分: nycwy配電電纜和ny
  15. House junction boxes, up to 1000 v ; installation instructions for distribution cable nakley and house junction cable nycy

    最高可達1kv的住宅接線盒.第7部分: nakley配電電纜和n
  16. Polycrystalline diamond films were deposited on n - type si substrates. in order to achieve a better distribution of the implanted element, boron ions were implanted by two steps. the i - v curves were studied, the p - n junction effect is very evident

    在n型引襯底上沉積一層連續的金剛石膜,通過二次離子注入的方法使b離子比較均勻的分佈在金剛石膜中,通過測量i - v曲線,可以明顯的看出p - n結效應的存在。
  17. In exercise of the powers vested in me under regulation 14 of the road traffic traffic control regulations, chapter 374, i hereby direct that with effect from 10. 00 a. m. on 27 january 2006, the western kerbside lane of kwong chun street from a point about 10 metres south of its junction with tai po road v yuen chau tsai to a point about 55 meters south of the same junction will be designated a restricted zone from 7. 00 a. m. to 7. 00 p. m. daily

    交通管制規例第374章第14 1 b條所賦予的權力,下令由2006年1月27日上午10時起,廣進街由其與大埔公路元洲仔段交界以南約10米處起,至同一交界以南約55米處止的西面路旁行車線,每日上午7時至下午7時劃為限制區。
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