vapor deposit 中文意思是什麼
vapor deposit
解釋
蒸鍍-
In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous
實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。 -
The h and o isotope of water in fluid - inclusion at the beishan deposit indicates that the ore - forming fluid originated from magmatic water and partly from volcanic vapor
氫氧同位素研究證明，北山礦床成礦流體來源於原生巖漿水，有部分火山蒸氣加入。 -
The research and application of the diamond films were reviewed in this paper, and the nucleations on different substrates in hfcvd ( i lot filament chemical vapor deposition ) system were introduced. the improvement of the diamond nucleation on si, ni, cu was investigated, in order to deposit diamond of high density. the p - n junction between b - implanted diamond films and n - type si substrate was investigated
本論文簡要敘述了金剛石薄膜的研製進展和應用，介紹了用化學氣相沉積法（ hotfilamentchemicalvapordeposition ）在不同的襯底上的金剛石薄膜的制備方法和形核，並對si 、 ni 、 cu三種不同的襯底的金剛石膜研究了如何增大形核密度、提高形核質量。 -
The paper put forward an aim to deposit n - doped titanium dioxide film on glass substrate by the atmospheric pressure chemical vapor deposition ( apcvd ) method. using ticl4 and oa as precursors, titanium dioxide thin films had been deposited by apcvd method. nitrogen had also been doped in the film when n2o gas was added as the dopant
在實驗室條件下以ticl _ 4和o _ 2為先驅體，採用常壓化學氣相沉積法（ apcvd ）制備得到具有一定光催化性和親水性的tio _ 2薄膜，並且以n _ 2o作為摻雜劑，對薄膜進行了n的摻雜，在一定程度上提高了薄膜可見光照射下的光催化性和親水性。
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