very large scale 中文意思是什麼

very large scale 解釋
超大規模
  • very : adv 1 〈用於修飾形容詞、副詞或分詞〉很,甚,頗,極,非常。2 〈與否定詞結合〉(不)怎樣,(不)大...
  • large : adj 1 (體積,空間,數量,規模等)大的,巨大的;(權限等)廣泛的。2 (心胸)寬廣的,度量大的;(...
  • scale : n 1 (尺、秤等上刻劃的)分度,度數,標,標度,刻度;尺寸;尺,尺度。2 【音樂】(標度)音階;音列...
  1. The campaign elicited very large-scale an indictment of the deficiencies of existing policies and their executants.

    這場運動引起了對現行政策及其執行者的缺陷的大規模的控訴。
  2. Scientists and technicians were engaged and organised on a very large scale.

    在極為龐大的規模上延攬和組織科學家和技術人員。
  3. With the rapid development of electronic technology, vlsi ( very large scale itegrate circuits ) is widely applied in the electronic equipments. the structure of vlsi is complex, and the density of tube feet is intensive, logic is complicated

    隨著電子技術的飛速發展,電子設備中大量使用大規模集成電路晶元,其結構緊湊,而且電路的管腳密集、邏輯復雜。
  4. While still not evidenced in our experiment, liquid - phase doping of ammonium molybdate solution has been broadly agreed to be able to significantly increase the yield of swnts. we have developed another doping method, solid - phase doping of metal molybdenum at elevated temperature, and discovered that sol - gel prepared catalyst with such doping can be used to grow multi - wall carbon nanotube bundles in a very large scale

    對催化劑進行摻鉬處理表明,它可顯著提高催化劑催化裂解甲烷合成納米碳管的能力:作者在高溫下進行了催化劑摻入金屬鉬的實驗,得到了一種性能優異的催化劑,以此制備的多壁納米碳管的呈束狀分佈,所得的粗產物與催化劑之間的重量比達15倍以上。
  5. Computers built after 1972 are often called " fourth generation " computers, based on lsi ( large scale integration ) of circuits. later developments include vlsi ( very large scale integration )

    1972年以後的計算機習慣上被稱為第四代計算機。基於大規模集成電路,及后來的超大規模集成電路。
  6. Even the straits times also ran a report. very large - scale hor

    包括海峽時報也有報導,聲勢浩大吧?
  7. Very large scale integration

    超大規模集成化
  8. With the development of the very large scale integrated circuit technology, people " s attention is more and more concentrating on the miniaturization of the large component including the filters

    隨著超大規模( vlsi )集成電路技術的發展,人們越來越關注通信系統中大元件的小型化,包括濾波器的設計。
  9. Very large scale integration systems, 2004, 12 : 235 - 244. 7 mathew s k et al. sub - 500 - ps 64 - b alus in 0. 18 - mum soi bulk cmos : design and scaling trends

    而且在動態邏輯門中增加了一定范圍的電荷保持器,使系統在最壞情況下仍能正常工作,同時可承受一定的電源電壓和溫度變化。
  10. Digital television integrates the latest achievement made in digital image processing techniques and very - large - scale - integration technology, and thus demonstrates fascinating features that in time will render all existing tv sets obsolete

    數字電視集最新的數字圖象處理和超大規模集成電路技術為一體,並展示出不可思議的特性使現有的所有電視都會過時。
  11. Designed and implemented nic with 0. 35 um very large scale application specified integrated circuit ( asic ) the die size of nic reaches 350k gates and run at 200mhz 4

    設計並實現了網路介面控制器nic 。 nic採用超大規模專用集成電路asic技術實現,晶元規模為35萬門,採用0 . 35 m工藝,最高工作頻率達到200mhz 。
  12. With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution

    隨著大規模集成電路( vlsi )和超大規模集成電路的發展,節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用,並且在硅材料的缺陷工程中發揮了特殊的作用,人們通過高溫快速熱處理在矽片中引入空位,並控制空位的分佈,進而形成了具有較強內吸雜能力的潔凈區。
  13. Abstract : the progress of the aqueous solution cleaning technology for silicon wafer in very large scale integrated circuit fabrication is reviewed. the future of the aqueous solution cleaning technology is discussed as well

    文摘:本文綜述了超大規模集成電路製造過程中矽片溶液清洗技術的研究歷史及現狀,並對技術的未來發展進行了展望。
  14. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管( mesfet )器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構,因此研究lec法生長si - gaas ( lecsi - gaas )襯底材料特性對mesfet器件性能的影響,對gaas集成電路和相關器件的設計及製造是非常必要的。
  15. A vlsi very large scale integration architecture is also proposed to implement the improved motion estimation algorithm. experimental results show that this algorithm - hardware co - design gives better tradeoff of gate - count and throughput than the existing ones and is a proper solution for the variable block size motion estimation in avs

    考慮到avs主要面向圖像尺寸較大的高清數字電視壓縮,這種高復雜度的運算已經超過了現有通用處理器的運算能力,因此有必要設計專門的快速演算法和與這種演算法相匹配的硬體加速器。
  16. Very large - scale integrated circuits, vlsi

    超大型積體電路
  17. In view of very large scale of y - pipes of this project, the design of combined bearing of y - pipe and surrounding rock is adopted to decrease the difficulty of fabrication and erection

    摘要西龍抽水蓄能電站岔管規模遠超過國內已建工程,為降低製作、安裝難度,考慮岔管與圍巖聯合受力設計。
  18. As the development of microwave technology and the universal use of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), traditional automatic testing technology for pcb ( printed circuit board ) is faced with a rigorous challenge

    隨著微波、毫米波技術的發展以及超大規模集成電路( vlsi ) 、極大規模集成電路( ulsi )的相繼誕生和廣泛應用,傳統的電路板自動測試技術受到了前所未有的挑戰。
  19. The implementation of in - chip clock generator is often based on modern cmos ic process technology which is usually adopted by very large scale digital system. while designing a deep sub - micrometer cmos circuit, delay, power consumption and die size are of the main factors that must be considered

    使用現代深亞微米cmos集成電路工藝製造的內部時鐘發生器要綜合考慮延時、功耗、面積等各種重要因素,而且經常要針對soc系統的需求設計特殊的電路結構。
  20. As the density of very large - scale integration ( vlsi ) chips increases, the probability of introducing defects on the chips during the fabrication process also increase

    隨著超大規模集成電路晶元生產技術的發展,單片晶元的集成度越來越高。要想一次生產出沒有任何缺陷的晶元已不太可能。
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