voltage deviation 中文意思是什麼
voltage deviation
解釋
電壓偏移-
Power quality - admissible deviation of supply voltage
電能質量供電電壓允許偏差 -
Influence of dc - rail zero - voltage notch on the output of the inverter is investigated, and an important conclusion is obtained that the direction of output current of the inverter is not effected by the voltage deviation produced by dc - rail zero - voltage notch, on the basis of which, a new simple correction approach is put forward. experiment results show that the proposed correction method is effective
探索了直流母線零電壓凹槽對逆變器輸出特性的影響，得出了母線零電壓凹槽形成的輸出電壓偏差與逆變器輸出電流方向無關這一重要結論，在此基礎上，提出了一種簡便的校正新方法，通過試驗驗證了該校正方法的有效性。 -
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
According to the no - loading waveform deviation factor, the prototype conforms to the national design standard and practical needs in the engineering. more important, the high voltage is achieved. in the condition of considering core saturation and damping winding influence, the influence to powerformer of the no - loading tooth harmonic emf is smaller than conventional generator, and the waveform deviation factor of the former is smaller, too
由求得的樣機空載電勢波形畸變率可知，該樣機滿足國家設計標準和工程實用要求，更重要的是，實現了產生高壓的目的；考慮鐵心飽和、考慮阻尼繞組影響情況時，電力發生器與具有相同尺寸（除定子槽形）的傳統發電機相比，空載齒諧波電勢對電力發生器的影響較小，前者的空載波形畸變率較小。 -
This paper begins with the calculation of the stator ' s resonance frequency, deals with the design and manufacture of motor, and puts forward dual nut structure of traveling wave revolving ultrasonic motor, and presents the analysis of the contract between rotor and stator in the manufacturing process, relation between the amplitude of voltage - ceremic chip and drive sources. the conclusion is that amplitude is affected by deviation of resonance frequency
同時分析了電動機的加工工藝，對超聲波電動機製造過程中功率與接觸角和振幅與驅動電源的關系進行了討論，得到了接觸角與輸出功率的關系曲線，以及超聲波電動機的振幅主要受電壓和激振頻率偏離定子環第2n階諧振頻率的偏離量確定。 -
The characteristic of those topologies are analyzed in detail. a novel isolated interleaving two - transistor forward boost converter is proposed in this paper. this converter has less voltage stress of power switches, and no transformer magnetic deviation
研究一種新穎的隔離boost變換器，它具有開關管電壓應力低，沒有變壓器單向磁飽和問題，可以實現交錯並聯雙管正激電路所有開關管零電壓開關。 -
Such problems as the attenuation of dc elements and sine waveform, voltage sag and frequency deviation should be taken into account in order to analyze the transient process in the power system
要分析電網的暫態特性，還必須考慮衰減直流分量和衰減正弦波，以及電壓缺口和頻率偏移等問題。 -
An instance indicates that the proposed approach can find the optimal control more effectively than general approach and can minimize the reactive power through the transformer and the deviation of the secondary bus voltage. it also increases the margin of appropriate voltage in the second side
模擬結果表明，所提演算法較傳統方法能更有效地搜索到最優控制策略，使主變中流過的無功功率及主變二次側電壓偏移最小，增加了二次側電壓合格裕度。 -
After getting the experiment data, the resistance value and the deviation value of compensation voltage can be calculated by the two algorithms which can be realized by vb program language and math software such as matlab and maple
得到採集數據以後，通過vb編程語言， matlab和maple數學計算軟體編程，利用最小二乘法和最佳一致逼近演算法，計算出補償網路的電阻參數和補償電壓的擬合差值。 -
At present, our country power quality national standard was chiefly stipulated five quotas : frequency, harmonic and voltage deviation, three - phase unbalance and the voltage fluctuation and flicker
目前我國電能質量國家標準主要規定了五個指標：頻率、諧波、電壓偏差、三相不平衡及電壓波動與閃變。 -
However, compared with voltage deviation, unbalance of three phases, harmonics and frequency deviation, fluctuation and flicker are more complex to be detected, its research is relative to scarce, and the measuring devices are much less. hence, some further research on measuring voltage fluctuation and flicker has been done in the paper
但與電壓偏差、三相不平衡、諧波、頻率偏移等電能質量問題相比，電壓波動與閃變的檢測較為復雜，研究相對不足，測量設備較少，因此，本文選擇這一問題進行進一步研究。 -
The method has perfect effect on calculating the voltage swell and sag, voltage notch and frequency deviation. numerous simulations also prove the effectiveness of the method
對于電壓驟升驟降、電壓缺口以及頻率偏移，該計算方法也有很好的效果，大量的模擬結果證明了這一點。 -
A gaas threshold voltage automatic measurement system is designed. the sample may be 2 ", 3 " wafer. it can save the data, statistic average value and standard deviation of threshold voltage, map the gaas threshold voltage
本文建立了一套閾值電壓自動測試系統，可對半絕緣gaas單晶上製作的mesfet器件的閾值電壓進行自動測量，並給出閾值電壓的測量數據，作出閾值電壓的mapping圖，計算閾值電壓的統計平均值、標準偏差等。
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