voltage increase 中文意思是什麼
voltage increase
解釋
增壓-
Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage
針對目前厚外延工藝的缺點，提出的薄外延ldmos採用n埋層，通過優化n埋層長度、注入劑量可提高器件耐壓。 -
The reactive power is of great significance. it can reduce loss, improve voltage wave, increase power quality and maintenance system stabilization. as the generation and net disjoined, remunerating the reactive cost relates the benefits of the generation and transmission
隨著電力市場的改革，廠網分離，競價上網后，無功成本的收回問題關繫到發、輸電各方切身的利益，逐漸受到人們的重視，但由於對其研究起步較晚，尚未形成完善的理論。 -
The system introduces the preventive control that executes the emendation before the voltage violations, and it can increase the voltage security margin
另外系統還引入預防控制，在電壓未越限時提前進行校正，提高了電壓的穩定裕度。 -
When the batteries are treated by hydrophobia of 4 % ptfe concentration, the cycle life and voltage plateau improves. internal resistance increase with the increase of ptfe concentration
4的ptfe乳液憎水處理提高了電池的循環壽命，但電壓平臺衰退有所加快，憎水處理后內阻隨ptfe乳液濃度的升高而增大。 -
The second, at the high frequency primary coil, when switch turn on with control signal ( the spwm pulse is modulated ), in the positive or negative semi - period of low frequency modulation signal, transformer coil with same direction voltage. the magnetic flux of transformer core will increase step by step. at the end, it leads to magnetic flux saturation
二、在高頻變壓器原邊，當開關管接收控制信號脈沖列（經調制的spwm波列）導通時，在低頻調制信號的正半周或負半周內，施加在變壓器繞組上的是同一方向的電壓，變壓器磁芯中的磁通可能將級進地逐漸增加，導致磁芯飽和，造成磁偏或單向磁化，導致低頻電信號放大失真或由於很大的磁化電流而無法正常工作。 -
And a solve scheme is presented, controlling the voltage of 220kv power network in chongqing under 232kv during low load period. with the increase of load and power supply, the reasonable positions and capacitance of reactive power compensation become reasonless
隨著負荷的不斷增加，電源亦隨之大幅度增加，使得原網路中本來合理的補償位置、補償容量變得不合理，因此有必要重新選擇補償點。 -
A novel bi - directional dc / dc converter was introduced in the dissertation, which based on refer much converter data. the soft switching, phase - shifted pwm and bi - directional dc / dc converter hang together, depress circuit switch ullage and noise effectively, which provide condition to increase switch frequency, efficiency and reduce size and weight for the converter ; at the same, the converter have the virtue of structure compact, voltage and current stress small etc such as ordinary hard switch converter
本文作者在查閱國內外大量雙向dc dc變換器資料的基礎上，採用一種新型雙向dc dc變換器的拓撲結構，把軟開關技術和移相控制pwm技術以及雙向dc dc變換器技術有機結合在一起，有效地降低了電路的開關損耗和開關噪聲，為變換器裝置提高開關頻率、效率以及降低尺寸及重量提供了良好的條件。 -
This could increase the work function of ito, which would decrease the device threshold voltage and increase the luminescence efficiency consequently
因此，採用氧等離子體處理的ito薄膜作為oled的陽極將降低發光器件的開啟電壓，提高其發光效率。 -
In order to improve process quality and increase probability, we optimize ohm contact resistance and breakdown voltage of devices by adjusting process conditions. finally, dc - 500mhz midf switch is fabricated, in which some important conclusions and suggestions are introduced
工藝研究的重點是改進工藝質量，提高成品率，為此我們通過調整工藝條件來優化歐姆接觸電阻和提高器件的擊穿電壓。 -
The experimental results showed that the substrate of pyroelectric sensor could significantly affect the detectivity. the porous silicon dioxide and pet plastic film substrate could effectively decrease the thermal conduction and the thermal fluctuation noise of the pyroelectric element, increase the voltage responsivity and the detectivity obviously
結果表明，多孔氧化硅和pet塑料可有效降低熱釋電元件的對外熱傳導，明顯提高傳感器的電壓響應率和降低熱釋電元件的熱噪聲。 -
The leec biochip can be connected with pcb ( printed circuit board ), thus it can generate a moving electric field by changing time, scope and field intensity discretionarily under single chip processor ' s control. meanwhile it is probable to reduce driving voltage and decrease temperature greatly, and so increase resolution of dna separation
研究內容包括線性分散式電極陣列的理論設計，以普通載波片和有機高聚物pdms （ polydimethylsiloxane ）為基本材料的晶元製作工藝， leec晶元和pcb板的連接方式，硬體控制系統的設計以及控制晶元工作的單片機程序編制等，此外還包括電化學檢測方法的研究。 -
Many ways of doping have also been reported. at the same time, to reduce the onset voltage and to increase the intensity of electroluminescence ( el ) is all very important for el devices
由於硅的平面集成工藝已相當成熟，所以從工藝兼容性考慮，用硅基材料作為發光器件將是最佳的選擇，而其獲得應用的關鍵是提高發光效率。 -
The increase of luminous efficiency is a result of the decreased cell voltage and electron temperature in discharge
當氣體放電于較低電壓的情況下，電子溫度較低並可以提高發光要率。 -
The pzt ferroelectric films " fatigue characteristics were studied, and here the electrical load was produced by rt6000s ; it was known that with the voltage increasing or frequency reducing, the degree of ferroelectric fatigue decay would increase
然後用rt6000s測試儀加載電載荷，總結得出pzt薄膜的鐵電疲勞規律，即加載電壓增加或加載頻率降低時，鐵電極化衰減程度變大。 -
The soft switching, phase - shifted pwm and bi - directional dc - dc converter hang together, depress circuit switching loss and noise effectively, which provide condition to increase switch frequency, efficiency and reduce size and weight for the converter ; at the same time, it is proved the converter can achieve zvs in larger load variation, and the converter has the virtue of structure compact, voltage and current stress small such as ordinary hard switch converter
該變換器把軟開關技術和相移控制pwm技術以及雙向dc - dc變換器技術有機結合在一起，有效地降低了電路的開關損耗和開關噪聲，為變換器裝置提高開關頻率、效率以及降低尺寸及重量提供了良好的條件;同時，能拓寬零電壓開關的范圍，使變換器在較寬的負載變化范圍內都能實現軟開關。 -
Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical
通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出：弧根周圍空氣的熱電離導致了電弧的發展，靜電場力對電弧的發展起到了加速作用，電擊穿僅發生在閃絡最終的跳躍階段；通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數，得到了不同階段電弧（電弧起弧階段、電弧發展階段及完全閃絡）的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。 -
The devices for detecting phase - to - ground fault in ineffectively grounded systems are seldom functionary at present. based on thousands of experiments in high - voltage laboratory in north china electric power university, the reasons for misjudgment and the effective measures to avoid it are presented in this paper : to change pt connection form to prevent from ill - effects of ferro - resonant overvoltage ; to increase soft measures to resist against interference ; to adopt neural network method to obtain the virtual value of the detect way
依據上千次實驗，我們找到了一些導致選線誤判的影響因素，並提出幾點防止誤判的措施，包括改變pt接線方式，避免鐵磁諧振對選線的影響；通過對故障檢測方式的處理和使用連續判斷技術增強裝置的軟體抗干擾能力；嘗試採用神經網路演算法設定選線方法的有效域等。 -
It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established
通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
With the increasing of helium content in the mixed gases, the arc voltage increase, and the weld width broaden, especially the weld penetration deepens obviously
隨著混合氣體中氦氣比例的增加，熔深和熔寬均增加，但熔深增加得更明顯一些。
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