voltage threshold 中文意思是什麼

voltage threshold 解釋
閾值電壓
  • voltage : n. 【電學】電壓,電壓量,伏特數。 the working voltage (電氣的)耐壓限度。
  • threshold : n. 1. 門檻;入口,門口。2. 【心理學】閾限。3. 界限,限度。4. 【物理學】臨界值,閾。5. 入門,開始,開端。
  1. A study of stability on threshold voltage of pmos dosimeters

    劑量計的穩定性研究
  2. According to photomicrograph, the diameter of emitting aperture is about 40um. in term of i - v curve, the threshold voltage is 1. 4v

    國際上,已經有先例將sio _ 2探尖與vcsel採用簡單、有效的膠合方法結合,製成vcsel snom復合探測器。
  3. Then, an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects

    給出了電子密度的隱式表達式和閾電壓的顯式表達式,它們都充分考慮了量子力學效應。
  4. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  5. This could increase the work function of ito, which would decrease the device threshold voltage and increase the luminescence efficiency consequently

    因此,採用氧等離子體處理的ito薄膜作為oled的陽極將降低發光器件的開啟電壓,提高其發光效率。
  6. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型,用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線;分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響;論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性,分別模擬了室溫下和300時sicpmos器件的輸出特性,分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  7. After which, the battery will be charged by large constant current to allow the fast charging. finally, the constant voltage charging is adopted to guarantee the battery was charged to its full capacity. under the condition that the temperature has raised to a certain threshold at the constant current charging stage, the over temperature circuit is performing and it provides a compensation current which switches the system to constant temperature charging mode with the intention of protecting the ic

    即在充電初期採用較小的電流對電池進行預處理,對出現過放電的電池進行修復和保護;然後採用較大的恆定電流對電池充電,實現快速充電的目的;最後採用恆定壓充電,確保電池充滿;在恆流充電階段,當晶元溫度上升到一定程度時,晶元過熱保護電路開始工作,該電路以提供充電補償電流的形式使充電進入恆溫充電模式,對晶元進行保護。
  8. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確,參數提取方便,適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明,盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大,但從mosfet閾值電壓漂移量的擺幅這一角度來看,在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  9. Power mosfet is a voltage - controlled appliance which has a fast switch speed, small driven current and higher threshold voltage. so it is the ideal power interface component of micro - computer

    功率mosfet是一種電壓控制型器件,開關速度快,驅動電流小,開啟電壓較高,是微機的理想介面部件。
  10. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析,對所得結果從器件內部物理機制上進行了討論,最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深(凹槽深度)的增大,槽柵器件的閾值電壓升高,亞閾斜率退化,漏極驅動能力減弱,器件短溝道效應的抑制更為有效,抗熱載流子性能的提高較大,且器件的漏極驅動能力的退化要比改變結深小.因此,改變槽深加大負結深更有利於器件性能的提高
  11. Results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed - gate process

    結果表明,採用平面工藝制備的gaasmesfet閾值電壓均勻性比採用挖槽工藝制備的gaasmesfet閾值電壓均勻性更好。
  12. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  13. Dtv dual threshold voltage

    雙重極限電壓
  14. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上,對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究,著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移( vth和vit 、 vot )與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  15. Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn

    襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響,存在偏壓閾值,低於該值不能產生立方氮化硼。
  16. Results show that the sidegating threshold voltage is higher when adjacent devices are isolated by boron implanted, which means that boron implantation significantly improves the electronical isolation between devices and reduces the sidegating effect

    結果表明,採用注入隔離工藝制備的mesfet的旁柵效應比採用自隔離工藝制備的mesfet的旁柵效應要小。這說明,採用注入隔離可以形成更好的器件隔離,減小器件的旁柵效應。
  17. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝,開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  18. Especially in cmos n - well integrated circuits technology, the body effect will cause the nmos threshold voltage following the pumping voltage to be lifted and then the highest pumping voltage will be limited

    特別是在n阱集成電路工藝,體效應使得每一階nmos管的閾值電壓都不斷抬升,以至於電荷泵的最高輸出電壓受到限制。
  19. At the same time, liquid crystal science harvests satisfyingly, its research field has extended to physics, chemistry, electronics, biology, etc. surface orientation of liquid crystal molecule ( lcm ) is a key technique in the application of lcd, the effect of orientation plays an important role in the basic performances, such as uniformity, visual angle, aberration, response, threshold of voltage and so forth

    液晶自1976年在世界上首次應用於計算器的顯示屏以來,就以其輕量、薄型、能耗低、顯示面積大等優勢在顯示應用方面得到迅猛發展,而同時,液晶科學也得到了全面發展,研究領域遍及物理、化學、電子學、生物學等各個學科。液晶分子取向控制技術是液晶板顯示應用中的一個關鍵技術,取向程度的好壞對液晶顯示器的均勻性、視角、色差、響應速度、閾值電壓等基本性能都有重要影響。
  20. It ought to be compatible with low - voltage circuit process and satisfy requirement of high - voltage and large current this paper deeply discusses threshold voltage, on - resistance and current characteristic of ldmos, and builds the approximately accurate model of these electrical parameters

    本文討論的ldmos結構是pdp選址驅動晶元設計的一個關鍵問題,該結構實現了與低壓電路工藝的兼容,並滿足耐壓高、電流大的實際需要。
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