wurtzite 中文意思是什麼

wurtzite 解釋
纖維鋅礦
  1. Various chemical strategies have been introduced to the system to affect the dynamics of reaction, and thus, to adjust the nucleation and growth process. by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature, both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled. a precipitate slow - release controlled method was designed in the synthesis of manganese selenides

    在化學調控合成思想的指導下，運用已取得的調控合成的成功經驗，利用mnseo3沉澱緩釋放出mn2 +源和硒源，在調節反應溫度的基礎上，于同一反應體系成功地合成了mnse2和mnse的立方體和球形微米晶，實現了產物組成和維度的調控，並對它們的磁行為進行了研究。
  2. However, it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap, which will lead to an extremely large miscibility gap

    然而要在gap中實現高濃度的摻氮並不容易。這主要是由於gap和gan之間較大的物理特性的差異，特別是晶格結構和晶格常數的差異，使得gap和gan存在較大的可混溶性間隙，從而難以生長高質量的高摻氮的gap材料。
  3. Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band

    Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。
  4. Xrd spectra show that the bulk gan particles are wurtzite structure, and the nc gan has small domain size and the structure of solid solution phase

    Xrd結果顯示經由氣凝法合成前後氮化鎵均為一六方晶系結構，利用塊狀氮化鎵生成的奈米粉體粒徑微細且是一種固溶相結構。
  5. Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的的寬禁帶-族半導體材料，室溫下能帶帶隙eg為3 . 37ev 。
  6. Zinc oxide is a ii - iv wide band - gap ( eg = 3. 37ev ) compound semiconductor with wurtzite crystal structure

    六角纖鋅礦結構的氧化鋅是一種重要的寬帶隙-族半導體材料，室溫下帶隙為3 . 37ev 。
  7. Fe - sem, edx and xrd indicated that the low - dimensional nanomaterials were wurtzite gan

    Fe - sem ， edx和xrd表明三種低維納米結構均為纖維鋅礦gan 。
  8. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
  9. Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties

    氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶ii - vi族半導體材料，由於其優良的特性，在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。
  10. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  11. The result of the xrd indicated that the production structure was wurtzite, which was mixed with hydrocarbon

    射線衍射結果表明，摻入了碳氫化合物的反應產物的晶須屬六方纖鋅礦結構。
  12. When x 0. 36, the alloy thin films keep the wurtzite structure. and the band gap could be varied from 3. 40 ev to 3. 93 ev. the mg0. 05zn0. 95o and mg0. 15zn0. 85o alloys with wurtzite structure show high thermal stability up to 1000

    研究表明當x的取值小於等於0 . 36時，合金薄膜會保持zno六角形纖鋅礦結構，此時薄膜的能隙寬度可以在3 . 4ev到3 . 93ev之間調節。
  13. The x - ray diffraction patterns and raman spectra indicated that zns fully transformed into zno with a polycrystalline hexagonal wurtzite structure when zns thin films were oxidized at annealing temperature of above 700 oc in an oxygen ambient

    X射線衍射（ xrd ）和拉曼實驗結果表明硫化鋅（ zns ）薄膜在高於700oc熱氧化處理后，硫化鋅（ zns ）全部轉化為氧化鋅（ zno ） ，且是六角纖鋅礦的多晶薄膜。
  14. Fe - sem, edx, xrd, saed and hrtem indicated that the regular arrays nanorods were wurtzite single crystal gan and the nanorods were tapered from the base to their upper end, which compatible with the theoretical result

    Fe - sem ， edx ， xrd ， saed和hrtem結果表明：規則排列的納米棒是具有六方晶系纖鋅礦結構的gan單晶體，並且從西北工業大學博士學位論文底部到頂部具有塔形形貌，這一現象與理論推導結果一致。
  15. Zno is a - semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties

    氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶-族半導體材料，由於其優良的物理特性， zno薄膜在太陽能電池、紫外探測器、發光顯示器件、聲表面波器件、氣敏傳感器等方面得到了廣泛的應用。
  16. X - ray diffraction ( xrd ), uv - vis absorption spectroscopy and photoluminescence spectroscopy ( pl ) were employed to study the structural and optical properties of mgxzn1 - xo alloy thin films. the experimental results show that the films were hexagonal wurtzite structure and the band - gap of mgxzn1 - xo alloy thin films gradually increased with increasing mg content. the quality of mgxzn1 - xo alloy thin films can be greatly improved by means of annealing in oxygen ambient

    實驗結果表明，利用溶膠-凝膠法制備的mg _ xzn _ （ 1 - x ） o納米薄膜為六角纖鋅礦結構，粒徑為3 5nm ，隨著mg含量的增加帶隙變寬；通過在氧氣氣氛下退火處理后， mg _ xzn _ （ 1 - x ） o納米薄膜表現出了較好的結構和發光特性，表明熱處理可提高薄膜質量。
  17. Zinc oxide is a ii - vi wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的?族寬帶隙半導體材料，室溫下帶隙寬度高達3 . 3ev 。
  18. Zinc oxide ( zno ) is a wide band gap ( 3. 4ev ) semiconductor with the hexagonal crystal structure ( wurtzite type ). zno thin films with the c - axis orientation perpendicular to the substrate show excellent piezo - electrical properties and are widely used in piezo - electrical filed. and the dense anjd uniform surface of the films is required when zno thin films are used as integrated functional films

    Zno屬於六方晶系6mm點群，晶體在c軸垂直面上的電性和彈性都是對稱的，因而c軸擇優取向的多晶薄膜能夠具有單晶那樣的壓電性和光電性質，而具有平整均勻的表面形貌則是zno薄膜作為一種集成功能薄膜應用性能的保證。
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