zinc oxide (zno) 中文意思是什麼

zinc oxide (zno) 解釋
鍍鋅設備
  • zinc : n. 【化學】鋅 （Zn）。vt. （zinced, zincked） 用鋅包，在…上鍍鋅。 flowers of zinc ＝ zinc oxide 鋅華，氧化鋅。
  • oxide : n. 【化學】氧化物。 antimony oxide 銻白，氧化銻。 deuterium oxide 重水，氧化氘。 mercuric oxide 氧化汞。 nitric oxide 一氧化一氮。
  1. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  2. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  3. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  4. An array of non - aligned monocrystalline zinc oxide nanowires zno nws is fabricated on a silicon substrate by thermal evaporation

    使用熱蒸發的方法在硅基底上制備了非定向氧化鋅zno單晶納米線陣列。
  5. Zno, zinc ingots, zinc oxide

    氧化鋅，碘酸鋅
  6. Furthermore, its response changed little even after the sensor was soaked in water for 30 min. four kinds of multi - layers nanocomposite humidity sensitive films, including sodium polystyrenesulfonate / poly ( diallyldimethylammonium chloride ) ( napss / pdda ), sodium polystyrenesulfonate / poly4 - vinylpyridine quaternized with butyl bromide ( nbubr - p4vp ), sodium polysryrenesulfonate / zinc oxide ( napss / zno ) and sodium poly ( acrylic acid ) / zinc oxide ( paana / zno ), have been prepared by means of self - assembly

    用靜電吸引自組裝法制備了聚苯乙烯磺酸鈉（ napss ）聚二烯丙基二甲基氯化銨（ pdda ） 、 napss溴代正丁烷季胺化聚4 -乙烯吡啶（ nbubrp4vp ） 、聚苯乙浙江大學碩士學位論文摘要烯磷酸鈉則apss們化鋅面ox聚丙烯酸鈉p句zno四個體系的自組裝納米復合濕敏膜及濕敏元件。
  7. Zinc oxide ( zno ) is an important wide - band ( 3. 37ev ) semiconductor with low dielectric constant

    Zno是一種重要的寬禁帶（常溫下為3 . 37ev ）低介電常數的直接帶隙半導體材料。
  8. Zinc oxide, zno, a wide direct - gap semiconductor, attracts as much attention as gan in photoelectric research field

    Zno ，作為一種直接帶隙寬禁帶半導體材料，是繼gan之後光電研究領域又一熱門的研究課題。
  9. Zinc oxide ( zno ) is an interesting wide band gap ( 3. 3 ev ) semiconductor material with a binding energy of 60 mev

    氧化鋅是一種重要的寬禁帶隙（ 3 . 3ev ）半導體材料，它的激子束縛能高達60mev 。
  10. Zinc oxide series gas sensor, zno

    系氣敏元件
  11. Adding 0. 04mol % nd2o3 improves the varistor voltage remarkably, and at the same time decreases the leakage current and the voltage ratio, then zinc oxide varistor show outstanding comprehensively performance. nano zno powder was added into varistor materials

    研究結果表明，壓敏閥片中加入納米氧化鋅后，其壓敏電位梯度顯著提高，當納米zno含量達到sowt %時，壓敏電位梯度可達613 . 73vlmm 。
  12. Therefore, adding rare - earths oxides ( nd2os > ceo2 and la2o3 ) with appropriate content decreases the size of zno grain evidently and makes the grain size and distribution more homogeneous, then the zinc oxide varistor show outstanding comprehensively performance

    因此， ndzo3 、 ceoz和lazo3加入到氧化鋅壓敏閥片中，使zno晶粒尺寸減小，並使晶粒分佈更為均勻，從而改善了壓敏閥片的綜合電性能。
  13. Zinc oxide ( zno ) is a wide - band gap semiconductor that possesses excellent optical and electronic properties, and as a result it stimulates a broad range of researching interest. it shows great promising applications in ultraviolet lasers, solar cells, sensors and so on

    寬禁帶半導體zno材料由於具有優異的光電性能引起了人們廣泛的興趣，其在紫外激光器、太陽能電池、傳感器等方面有著廣泛的應用前景。
  14. Zinc oxide ( zno ) is a wide band gap ( 3. 4ev ) semiconductor with the hexagonal crystal structure ( wurtzite type ). zno thin films with the c - axis orientation perpendicular to the substrate show excellent piezo - electrical properties and are widely used in piezo - electrical filed. and the dense anjd uniform surface of the films is required when zno thin films are used as integrated functional films

    Zno屬於六方晶系6mm點群，晶體在c軸垂直面上的電性和彈性都是對稱的，因而c軸擇優取向的多晶薄膜能夠具有單晶那樣的壓電性和光電性質，而具有平整均勻的表面形貌則是zno薄膜作為一種集成功能薄膜應用性能的保證。
  15. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
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