低值電流 的英文怎麼說

中文拼音 [dīzhídiànliú]
低值電流 英文
minimum current
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. In digital relay, the percentage of noise will increase rapidly with the increase of sampling rate when derivation calculus is substituted by sampled difference term. to solve this problem, a new method using fragment function integrated with the least square algorithm is proposed in this paper. the influence of white noise is greatly reduced and the accuracy of the dead angle calculation is nicely improved after adopting the new method

    在數字式保護中，如果用差分代替求導將導致噪聲的百分比誤差隨著采樣頻率的提高而劇增，本文對此進行了分析並提出了用分段樣條函數最小二乘法來計算電流波形的導數值，以便在提高采樣率的同時降低噪聲誤差的影響，並將其應用於基於32位浮點dsp的新型變壓器保護裝置。
  2. Elements of electrical and optical connection - test methods - current temperature derating

    電氣和光學連接元器件.試驗方法.第209部分:降低電流溫度額定值
  3. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  4. The algorithm of svpwm that is adopted by the system implements motor speed - regulation by control of magnitude and phase of motor flux. it can generate less harmonics in the output current of power inverter and less losses of ac motor, reduce pulsant component in output torque and raise availability of dc supply voltage

    系統採用的svpwm演算法通過對空間磁鏈矢量幅值和相位的控制來調節電機轉速，減少了逆變器輸出電流的諧波，降低了脈動轉矩，提高了電壓的利用率。
  5. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  6. Two nonlinear simulation methods are designed by curve fitting method and anfis which seem simply and right in the simulation experiment. based on the model different control strategies also were realized in detail such as chopped current control ( ccc ), angular position control ( apc ), amplitude - change ccc and pi control. a simple torque sharing function ( tsf ) method and a tsf controller were designed which decreases torque ripple effectively

    文章中還建立一種基於模糊神經網路的非線性模型，並對比分析了三種方法，模擬中確定了電機的最優開通關斷角，在此基礎上實現了電流斬波控制、角度位置控制、變幅值電流斬波控制以及分段雙閉環pi控制，模擬結果表明，它實現了電機的正常運行，很好的抑止了電機轉矩脈動，同時有效地降低了噪聲。
  7. Vertical - cavity surface - emitting lasers ( vcsel ' s ) have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation and very low threshold current. they are especially suitable for making two - dimensional ( 2 - d ) arrays as well as vcsel ' s based integrate devices

    垂直腔面發射半導體激光器（ vcsel ）與傳統的邊發射半導體激光器相比，它具有發散角小、單縱模工作、非常低的閾值電流等優點，尤其它適於二維面陣集成和與其它光電子器件集成。
  8. The researching results indicate the reverse recovery characteristics of the device are much improved : the reverse recovery time is remarkably shorted, the peak reverse current is notably reduced and the soft factor s is also increased in various degrees but not notable changed in forward drop when introducing the two kinds of novel structure

    結果表明，採用新結構后，反向恢復特性大大改善，恢復時間明顯縮短，軟度因子s顯著提高，反向峰值電流也有不同程度的降低，其綜合性能遠遠高於si同類型結構及常規p ~ + （ sige ） - n ~ - - n ~ +二極體。
  9. The lowest threshold current 1. 8ma is achieved with continuous - wave at room temperature, the maximum output power is 7. 96mw. for the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching

    利用濕法氧化和選擇性腐蝕相結合工藝研製出室溫連續工作的vcsel ，最低閾值電流為1 . 8ma ，輸出功率為7 . 96mw 。
  10. Green - mode which provides off - time modulation to linearly decrease the working frequency under light - load conditions and power limiting which will turn off the transistor when peak current of inductor reaches the threshold current

    同時該電路集成了能在輕負載情況下自動降低頻率的綠色模式以及能在電感峰值電流過高時關斷調整管的功率限制模塊，降低了系統的功耗。
  11. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱激光器及高亮度發光管的理論研究與實驗的基礎之上，採用沈光地教授提出的隧道級聯思想，成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙波長應變量子阱激光器，激射波長分別為952 2nm和990 2nm ， el譜的譜線寬度約3nm ，未鍍膜器件單面最大輸出光功率可達2w以上，閾值電流最低達120ma 。
  12. The chip can be widely used in mp3 player, pda, digital camera, cells phone and portable products etc. this thesis first introduces the basic theory of switching power supply. the operating theory of this circuit has been demonstrated. the operating principle and simulation analysis about band gap reference, self - biased current source, one shot circuit, hysteresis comparator, and current - limit circuit have been particularly expounded in this thesis

    本文首先闡述了開關電源的工作原理，詳細介紹了本電路的整體工作原理，最後重點介紹了自偏置電流源電路、基準源電路、單穩態觸發器電路、峰值電流限制及低電池電壓遲滯比較器的工作原理，並利用eda工具larker ? ams 、 hspice對電路進行了完整的設計和模擬模擬，給出了合理的電路數據，各子模塊電路的電特性參數均達到或優于設計所需指標。
  13. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  14. There are many approaches to achieve the purpose, and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure, in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties

    有多種途徑實現ld光束特性的改善，其中採用多有源區隧道結級聯大光腔結構的半導體激光器是既增加有源區等效厚度而又保證ld低閾值電流和高斜率效率等特性的最佳途徑之一。
  15. So the optium content of nd203 is 0. 04mol % in this study. when the ceo2 content is 0. 06mol %, potential gradient is maximum, improves about 30 %, voltage ratio is lower, and leakage current is the lowest

    當ceo _ 2含量為0 . 06mol時，氧化鋅壓敏閥片的電位梯度達到極值，比添加ceo _ 2前的電位梯度提高約30 ，且壓比較低，漏電流最小，因此本實驗ceo _ 2添加量的最佳值為0 . 06mol 。
  16. Current transformers are widely used for changing the magnitude of ac current. high currents can be stepped down to facilitate measurement by precision ammeters

    使用變流器能把高值電流變為低值電流，以便使用精密電流表進行量測。
  17. The results of experiment indicated that adding a appropriate amount of rare - earths oxide in zinc oxide varistor led to increase potential gradient greatly, decrease leakage current with voltage ratio no changed. when the nd2o3 content is 0. 04mol %, potential gradient of zinc oxide varistor is maximum, improves about 65 % compared with zinc oxide varistor no containing nd2o3, voltage ratio and leakage current are the lowest

    當nd _ 2o _ 3含量為0 . 04mol時，氧化鋅壓敏閥片的電位梯度達到極值，與不含nd _ 2o _ 3的氧化鋅壓敏閥片相比提高約65 ，且壓比最低，漏電流最小，因此本實驗nd _ 2o _ 3添加量的最佳值為0 . 04mol 。
  18. We take the peak current controlled dc / dc boost converter as an example. we compare and analyze power spectrum of input inductance current quantitatively of chaotic operation and periodic operation of converter. the computer simulation results demonstrate that power spectrum of input current has lower peak of power spectrum of chaotic operation than it of periodic operation, and then emi level is reduced

    以一個峰值電流控制dc dcboost型變換器為研究對象，在分析電路混沌現象的基礎上，分別對該電路工作于混沌和周期兩種狀態下的輸入電流頻譜進行了定量分析對比，證實了在相同輸出電壓條件下，工作于混沌狀態下電路輸入電流的頻譜與工作于周期狀態下電路輸入電流的頻譜相比，頻譜峰值減小，具有降低emi水平的效果。
  19. Based on the above, we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers, and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output, which will promote the achievement of higher reliability, lower threshold current arrayed surface - emiting lasers laser for high power output

    在此基礎上進行了面發射半導體激光器二維（ 2d ）列陣的制備研究，初步獲得了具有較低閾值電流密度和較高功率的45偏轉鏡面發射陣列半導體激光器，為研製高可靠性、高功率、低閾值電流的面發射陣列半導體激光器奠定了一定的基礎。
  20. The paper draws such conclusions : peak - current control has fast dynamic res ~ ond with simple control. arid requires slope compensation ; components should he laid reasonably ; soft - switching has merits on decfeasing switcliu ~ ~ ? ltage and improving the efficiency of syste1 ~ i

    論文得出峰值電流型控制具有動態響應快，控制簡單，需要斜率補償；電路元件應合理地布局和布線；軟開關在降低開關電壓應力，提高電路的效率等方面有顯著優點等重要結論。
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