低噪聲管 的英文怎麼說

中文拼音 [dīzàoshēngguǎn]
低噪聲管 英文
low noise tube
  • 噪 : 動詞1. （蟲或鳥叫） chirp 2. （大聲叫嚷） make noise; make an uproar; clamour
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  1. This paper studies the mechanism generated from flow - noise in seawater pipeline, introduces controlling method of flow - noise, analyzes sound field characteristics of flow - noise in seawater pipeline system and the merits and demerits of measuring the flow - noise methods in and out of the pipeline. in our experiment, a test measuring device of seawater muffler is used in a measuring chamberlet to verify that a method of reverberation chamberlet is difficult to exactly measure the low frequency flow - noise in pipeline. at the same time the insertion lose of water muffler in the low frequency was measured by the measuring chamberlet method

    本文分析了海水管路系統內流噪聲的產生機理，介紹了流噪聲的控制方法；分析了海水管路系統中流噪聲的聲場特性以及流噪聲管內、管外測量方法的優缺點；通過海水消聲器試驗測量臺架，利用測量小室驗證了混響箱法難以準確測量海水管路系統中的低頻流噪聲；用測量小室對水消聲器在低頻段的插入損失進行了測量。
  2. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  3. It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna

    本文證明了在cmos源端degeneration結構的低噪聲放大器中，忽略場效應管的柵漏電容將造成對放大管的最優柵寬估計過大。
  4. Describes its novel structure, the main features of which are the u shape single row heat exchanger, underneath type fan module and corrugated filter screen

    摘要介紹了節能型低噪聲卡式雙吹風機盤管機組採用的新型卡式雙吹風結構，其特點是採用了u形單排管換熱器、下置式風機組件、波浪形過濾網等部件。
  5. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  6. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  7. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  8. Semiconductor discrete device. detail specification for type cs203 gaas microwave low noise field effect transistor

    半導體分立器件. cs203型砷化鎵微波低噪聲場效應晶體管詳細規范
  9. Semiconductor discrte device. detail specification for silicon npn ultra - high frequency low - noise difference match transistor of type 3dg210

    半導體分立器件. 3dg210型npn硅超高頻低噪聲差分對晶體管.詳細規范
  10. Semiconductor discrete device. detail specification for silicon npn ultra - high frequency low - noise dual - difference match transistor of type 3dg213

    半導體分立器件. 3dg213型npn硅超高頻低噪聲雙差分對晶體管.詳細規范
  11. Lowest noise figure of a rf transistor is not normally where the input is perfectly matched

    射頻晶體管的最低噪聲系數通常不在輸入完全匹配的地方。
  12. The impact of the cascode transistor on the noise and linearity performance of the cmos lna is discussed in detail

    本文詳細分析了cascode場效應管對cmos低噪聲放大器的噪聲和線性性能的影響。
  13. In the end, some ideas about low noise pipe design are suggested and provided

    並在此基礎上，對管路系統的低噪聲設計提出了幾點建議。
  14. To reduce power dissipation of the amplifier, a kind of on / off technology is used in the circuit. with a little bias current circuit to control the main bipolar transistor operation, the transistor will be in a state of on / off

    採用器件旁路小電流工作電路，實現對低噪聲放大器主要工作晶體管的控制，使該晶體管按需要分別處于工作或關斷狀態，保證了放大器的極低功耗。
  15. Low noise amplifier using fet is adopted in the rf block of smart antenna both at 3. 95ghz and at 1. 9ghz. in the design process of lna, the author applies genetic algorithm in the optimization of gain and noise figure

    兩套射頻電路的低噪聲放大器電路均採用了兩級場效應管放大，在其增益及噪聲的優化過程中採用了遺傳演算法這一全局搜索性能較好的數值演算法。
  16. Semiconductor discrete devices detail specification for type 3dg44 silicon uhf low - noise transistor

    半導體分立器件. 3dg44型硅超高頻低噪聲晶體管.詳細規范
  17. Semiconductor discrete devices detail specification for type 3dg251 silicon uhf low - noise transistor

    半導體分立器件. 3dg251型硅超高頻低噪聲晶體管.詳細規范
  18. Semiconductor discrete devices detail specification for type 3dg142 silicon uhf low - noise transistor

    半導體分立器件. 3dg142型硅超高頻低噪聲晶體管.詳細規范
  19. Semiconductor discrete devices. detail specification for type 3dg218 silicon microwave low - noise transistor

    半導體分立器件. 3dg218型硅微波低噪聲晶體管詳細規范
  20. We decide to use seven - sections coupled - line filter after comparing the various filter circuits, and complete the quantitative analysis and optimization design by ads, hfss etc. ( 2 ) three - stages fet low noise amplifier according to the lna ’ s design theory and guide line, we decide to use ne3210s01 fet and choose the form of three - stages, thus we can achieve high stability, low noise and high gain

    通過對各種帶通濾波器電路方案進行比較，確定採用七階平行耦合微帶濾波器，並利用ads ， hfss等工具進行了定量的理論分析和優化設計。 （二）三級聯低噪聲放大器根據微波lna設計原理及指標要求，我們選用ne3210s01系列低噪聲管，並採用三級放大的形式，以期獲得高穩定性，低噪聲，高增益。
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