低閾值激光器 的英文怎麼說

中文拼音 [dīyùzhíjīguāngqì]
低閾值激光器 英文
low threshold laser
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 激光器 : [光學] （光激射器） laser （縮自 light amplification by stimulated emission of radiation）; optic...
  • 激光 : [物理學] laser 激光靶 laser target; 激光報警器 laser avoidance device; 激光玻璃纖維 laser fibre; ...
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  3. Vertical - cavity surface - emitting lasers ( vcsel ' s ) have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation and very low threshold current. they are especially suitable for making two - dimensional ( 2 - d ) arrays as well as vcsel ' s based integrate devices

    垂直腔面發射半導體激光器（ vcsel ）與傳統的邊發射半導體激光器相比，它具有發散角小、單縱模工作、非常低的閾值電流等優點，尤其它適於二維面陣集成和與其它光電子器件集成。
  4. Among those nonlinear effects, stimulated brillouin scattering has the worst effects on the fiber hydrophone system due to its low threshold and it produces a new light wave which is different from the incident light in frequency. this dissertation discusses the physical mechanism and quantum explanation of sbs in fiber

    在眾多非線性效應中，由於受激布里淵散射（ stimulatedbrillouinscattering ）效應的閾值最低，且產生了與入射光場不同頻率的新的光場，故對光纖水聽器系統而言，影響最大的即是受激布里淵散射效應。
  5. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱激光器及高亮度發光管的理論研究與實驗的基礎之上，採用沈光地教授提出的隧道級聯思想，成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙波長應變量子阱激光器，激射波長分別為952 2nm和990 2nm ， el譜的譜線寬度約3nm ，未鍍膜器件單面最大輸出光功率可達2w以上，閾值電流最低達120ma 。
  6. The principle advantages of vcsels over conventional edge - emitting lasers lie in ultralow threshold current, small far - field divergent angle, high modulation frequency, potential for wafer level testing and the ease for single longitudinal mode operation and two - dimension integration. as a result they show considerable promise for applications such as optical fiber communication, parallel optical interconnects, optical information processing and neural networks, etc. a direct coupling theoretical model in quasi - three - dimension for the gain - wave guide vertical - cavity surface - emitting lasers has been created in this paper

    它與傳統的邊發射激光器相比具有更優越的特性，例如，具有極低的閾值、較小的遠場發散角、調制頻率高、易實現單縱模工作和二維集成，無須解理封裝即可進行在片測試等，所以，它被廣泛應用於光纖通訊、并行光互聯、光信息處理、光神經網路等領域。
  7. The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well

    對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。
  8. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  9. There are many approaches to achieve the purpose, and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure, in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties

    有多種途徑實現ld光束特性的改善，其中採用多有源區隧道結級聯大光腔結構的半導體激光器是既增加有源區等效厚度而又保證ld低閾值電流和高斜率效率等特性的最佳途徑之一。
  10. Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available

    和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。
  11. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  12. There are many optical depletion mechanisms, such as diffraction depletion, the transimission of a reflector, scattering of the medium in the cavity, non - life absorption and so on, so the quality factor ( q factor ) is low. in

    利用這種微諧振腔製作的激光器，其自發輻射頻率落在光子晶體的禁帶范圍內，有效降低了激光振蕩的閾值，從而使激光器具有低閾值高效的特點。
  13. Theyb : gso laser obtained a lowhreshold of 77mw which is the lowest threshold in the world as far as we know

    Yb : gso獲得了77mw的低閾值，據我們所知，這是目前世界上yb : gso激光器中閾值最低的紀錄。
  14. Based on the above, we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers, and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output, which will promote the achievement of higher reliability, lower threshold current arrayed surface - emiting lasers laser for high power output

    在此基礎上進行了面發射半導體激光器二維（ 2d ）列陣的制備研究，初步獲得了具有較低閾值電流密度和較高功率的45偏轉鏡面發射陣列半導體激光器，為研製高可靠性、高功率、低閾值電流的面發射陣列半導體激光器奠定了一定的基礎。
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