受主摻雜 的英文怎麼說
中文拼音 [shòuzhǔchānzá]
受主摻雜
英文
acceptor doping-
When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
當半導體中加入了施主感受主雜質，我們就說該物質「摻雜」了。But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed
而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。Controlled concentrations of specific donors or acceptors may be intentionally added into materials to form extrinsic semiconductor using various techniques. such an alloying process in semiconducting materials is termed doping
控制特定施主和受主原子的濃度，進而運用各種方法能動地填加，這種在半導體材料中加入合金成分的過程稱為摻雜。Research of this thesis include two parts mainly, first part include the preparation of srtio3 powder materials by sol - gel process and solid phase synthesis process. the second part, on the base of strontium titanate powder materials prepared, srtio3 - based capacitor - varistor double function ceramic were fabricated by the conventional ceramic process
第二部分是在制備的鈦酸鍶粉體材料的基礎上，通過摻雜施主、受主離子對鈦酸鍶材料進行半導化，制備電容-壓敏雙功能器件，並對兩種方法制備的元件性能分析比較。However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films
但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports
本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。分享友人