含雜質晶體 的英文怎麼說

中文拼音 [hánzázhíjīngtǐ]
含雜質晶體 英文
impure crystal
  • 含 : 動詞1 （東西放在嘴裏 不咽下也不吐出） keep in the mouth 2 （藏在裏面; 包含） contain 3 （帶有某種...
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  2. Complete crystal shape, high diaphaneity and low impurity. suitable for circular saws, frame saws and geological broach

    晶體完整，透明度高，雜質含量低，晶形與晶體強度性能優越。使用於圓鋸切片、框鋸切片、地質鉆頭。
  3. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  4. Znd2160 complete crystal shape with full surface, good diaphaneity and low impurity, suitable for circular saws, frame - saw and geological broach

    Znd2160晶體完整，晶面飽滿，透明度高，雜質含量低，晶形與晶體強度性能優越。使用於圓鋸切片、框鋸切片、地質鉆頭。
  5. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  6. 32 the detail given in these two sections again indicates that if material is " reworked " a much deeper assessment should be made of the resulting product and the advice that concurrent validation is a suitable means of dealing with " reworking " only underlines the fact that it would be insufficient solely to check the reworked material against the original specification, due to the possibility of that reworked material may contain new impurities or may have different physical properties such as crystal structure

    32這兩部分所給出的細節說明，如果對一個產品進行了再加工，需要對產品結果進行更深入的評估，關于「同步驗證是處理再加工的恰當方法」意味著僅僅根據最初的技術標準對再加工物料產品進行檢查是不夠的，因為再加工原材料中有可能含有新的雜質或存在不同的物理性狀例如晶狀體等。
  7. The uv - vis transmission spectra and concentrations of metal ion impurities in different part of dkdp crystal was measured. the results show concentrations of metal ion impurities on the ( 100 ) face is higher than that on the ( 110 ) face and absorption on the ( 100 ) face is bigger than that on the ( 110 ) face

    通過測試點狀籽晶生長dkdp晶體不同部分雜質金屬離子的含量和紫外可見透過光譜，結果發現dkdp晶體柱面的雜質金屬離子含量比錐面高，柱面的紫外可見吸收比錐面大。
  8. The dislocation - free, low defects densities crystal are acquired, in which the impurities concentration is decreased, their distribution are uniform, and the gaas crystal has high uniform and purity characteristics

    利用m - lec法可以消除單晶中的位錯，降低缺陷密度，降低單晶中的雜質含量，並能使雜質在晶體中的分佈均勻，得到晶體均勻性、純凈度都高的gaas單晶。
  9. By analyzing the difference on ( loo ) and ( 110 ) face in the structure of dkdp crystal, the different of uv - vis transmission spectra and the different of concentrations of metal impurities in different part of dkdp crystal was explained

    通過分析dkdp晶體的原子結構以及柱面和錐面的原子結構差別，解釋了晶體柱面和錐面雜質金屬離子含量差別的原因以及其與紫外可見透過光譜的關系。
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