塗硼的 的英文怎麼說
中文拼音 [túpéngde]
塗硼的
英文
boron coated-
The synthesis and inspection of borate clear fire - resisting coatings
硼酸酯型透明阻燃塗料的合成與性能檢測Using in situ formation of ternary boride base cermets hard phases through chemical reactions and sinterbonding onto steel substrates though liquid sintering we successfully prepared a kind of ternary boride base cermet
摘要通過化學反應將原料粉來生成三元硼化物硬質相併通過液相燒結燒與鋼很好的結合，用這種工藝成功地在鋼基體上塗覆了預壓制的三元硼化物基金屬陶瓷。In this study, the kindling temperature of pure magnesium covered with the boronised substance and mg - al alloys, using the kindling temperature measuring method designed in this study, and exploring the boronised substance and aluminium ’ s influencings on the pure magnesium ’ s kindling temperature
應用本研究中所設計的燃點測試方法，對材料表面浸塗有硼化物的純鎂試樣和鎂-鋁合金試樣的燃點進行了測試，並通過大量試驗，探討了硼和鋁對鎂燃點的影響特點。The evacuated tube is similar to a conventional dewar flask and consists of two borosilicate glass tubes, a glass with high chemical and thermal shock resistance. the outer side of the inner tube is coated with a sputtered solar selective surface
真空玻璃管和傳統意義上的真空玻璃細頸瓶是相似的，它由兩層高強度耐沖擊性的高硼硅玻璃組成，內管外壁是磁控濺射選擇性吸收塗層。With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。Surface chemical analysis - secondary - ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials
表面化學分析.次級離子質光譜測定法.採用均勻塗料的硅中硼原子濃度測定分享友人