子值分算器 的英文怎麼說

中文拼音 [zizhífēnsuànqì]
子值分算器 英文
eniac
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 算 : Ⅰ動詞1 （計算數目） calculate; reckon; compute; figure 2 （計算進去） include; count 3 （謀劃;計...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  1. For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr

    本文對于微腔半導體激光器，提出站模型，能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性，利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論；對于電流i噪聲、自發發射壽命_ （ sp ）噪聲、自發發射因子噪聲、光子壽命_ p噪聲，以及電流調制、 _ （ sp ）調制、調制、 _ p調制，在小信號近似下，得到了相應的激光器的傳遞函數；在大信噪比的前提下，對激光器進行了頻域分析，分別計算了它們在不同參數下的信噪比增益，分析了其抗噪聲性能。
  2. And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown

    而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。
  3. In order to solve the problems of flux estimation using the voltage model, such as the initial value and the drift of pure integrator, a flux - observer - based method is applied

    利用磁通觀測器，可避免用電壓模型推算轉子磁通時遇到的積分運算問題（初始值確定和誤差積累引起的積分漂移） 。
  4. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  5. At the same time, liquid crystal science harvests satisfyingly, its research field has extended to physics, chemistry, electronics, biology, etc. surface orientation of liquid crystal molecule ( lcm ) is a key technique in the application of lcd, the effect of orientation plays an important role in the basic performances, such as uniformity, visual angle, aberration, response, threshold of voltage and so forth

    液晶自1976年在世界上首次應用於計算器的顯示屏以來，就以其輕量、薄型、能耗低、顯示面積大等優勢在顯示應用方面得到迅猛發展，而同時，液晶科學也得到了全面發展，研究領域遍及物理、化學、電子學、生物學等各個學科。液晶分子取向控制技術是液晶板顯示應用中的一個關鍵技術，取向程度的好壞對液晶顯示器的均勻性、視角、色差、響應速度、閾值電壓等基本性能都有重要影響。
  6. Against a prototype which is being produced ， its three dimension end region entity model of stator is established ， and with the aim of simplifying calculation ， the theory of how to simplify entity model is studied ， then the theory is made use of ， and the end region entity model of stator is simplifi - ed ； meshing characteristics of three dimension entity model and shortcomin - gs of end region entity model of stator are studied ， then meshing method of three dimension end region entity model of powerformer stator is studied as well ， and the simplified entity model is meshed with this meshed model ， the distribution of end region magnetic field of stator is analyzed ， and the magnetic field energy and reactance of powerformer end region are calculated and compared with design value because the prototype is being produced ， in this paper ， stator core ， gap and eddy equipment are not taken into consideration ， and this has a little influence on the result ， but through analysis ， the result is proved to be good through the example calculation ， it is known that the method of this paper is useful and through theoretic analysis ， it is proved that end region

    針對一臺生產中的樣機，對其建立了定子端部三維實體模型，而且為了達到簡化計算的目的，研究了如何將其簡化的理論，並應用這些理論對樣機定子端部實體模型進行了簡化；研究了三維實體模型的剖分特點和定子端部實體模型存在的缺點，在此基礎之上，研究了對簡化的powerformer定子端部三維實體模型的剖分方法，並且對簡化的實體模型進行了剖分。應用剖分的三維實體模型，用有限元法分析了powerformer定子端部的磁場分佈，計算了端部區域的磁場儲能，並利用磁場儲能計算了powerformer定子端部漏抗，將計算值與設計值進行了比較、分析。由於樣機處在設計生產階段，本文暫時沒有考慮定子鐵心、氣隙和渦流器件對端部磁場的影響，這對分析結果有一定的影響，但是仍然得到較好結果。
  7. Using the numerical computation method to simulate the pure air flowing in the plasma generator and using zero dimension theory and continuous medium hypothesis to establish the mathematical model of the plasma generator and applying the curvilinear coordinate to disperse the space of the plasma generator, applying simplec method to solve the set of discredited equations

    應用數值計算的方法模擬了等離子發生器內部的純空氣流動，應用零維理論分析模型和連續介質假設建立了描述等離子發生器內部流動和傳熱的數學模型；採用貼體坐標系對等離子發生器的流場空間進行空間離散；採用simplec演算法來求解離散方程，獲得流場的數值解。
  8. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  9. In this paper, some investigation and design as following. have been carried out on er - yb codoped phosphate glass waveguide laser first, three primary performance parameters of er - yb waveguide laser pump threshold power ; output power and slope efficiency have been commulated and analysed theoretically based on er ~ ( 3 + ) - yb ~ ( 3 + ) energy configuration ; rate equation of stable state and transmitting equation. the influences of er - yb ions concentration ; enabled waveguide length ; light dot radius of signal light and pump light ; reflectivity of output lens on three above parameters have been researched

    首先，從er ~ （ 3 + ） - yb ~ （ 3 + ）能級結構出發，結合激光穩態速率方程與傳輸方程，對鉺鐿波導激光器的三個主要性能參數:閾值功率、輸出功率、斜率效率作了理論計算分析，並研究了鉺、鐿離子濃度、光波導激活長度、信號光與泵浦光光斑半徑比例、輸出耦合鏡反射率對這三個關鍵性能參數的影響。
  10. With the flourishing development of the microelectric technique and technology of computer and appearance of the high - efficient number value computational tool represented by matlab. get the fast development, thus the problem that solve the human physiology organ and ca n ' t be discerned in recognition technology of the picture

    隨著微電子技術及計算機技術的蓬勃發展和以matlab為代表的高效數值計算工具的出現，圖像識別技術得到快速發展，從而解決人類生理器官不能識別的問題，部分代替了人的腦力勞動並提高生產效率。
  11. After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes, the theoretical model of the leds * light - emitting efficiency was presented. based on this model, the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically, we found the calculated results agreed very well with the experimental results under the electric field from 0. 5 x 106 to 1. 5 x 106v / cm, the numeral calculations and theoretical analyzes of the light - emitting efficiency were done. the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination, the light - emitting efficiency was affected by many factors

    本文主要研究聚對苯乙炔（ ppv ）薄膜發光二極體發光效率及主要影響因素，簡單地介紹了ppv薄膜發光二極體的研究背景及發展趨勢、 ppv器件的結構和性質后，提出了一個計算器件發光效率理論模型，利用這個理論模型得出了發光效率公式的表達式：並對注入電流、復合效率等進行了數值計算，通過合理地選擇計算參數，發現計算值在場強為0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范圍內與實驗結果較好地符合，在此基礎上，對發光效率進行了數值計算和理論分析，結果表明：計算結果與理論研究結果相符較好，得出結論如下： （ 1 ）本文的理論推導正確地反映了器件中載流子的注入、傳輸和復合等基本機制； （ 2 ） ppv薄膜中的電致發光是激子復合的結果，發光效率受多種因素影響。
  12. On the basis of the impacting test of particle separator vortex blade, utilize ansys / ls - dyna finite element software to carry on the value computation to the impacting process and the analysis to the computed result ; and carry on the comparison to the computed result and the test result, two kind of results tally well

    在粒子分離器渦流葉片外物撞擊試驗的基礎上，運用ansys / ls - dyna有限元軟體對撞擊過程進行了數值計算，對計算結果進行了分析;並對計算結果和試驗結果進行了比較，兩種結果吻合較好。本文開展的對粒子分離器渦流葉片的外物撞擊試驗和數值計算，在國內屬首次進行。
  13. In this topic, the error characteristic of resistance voltage sensor was analyzed in theory, by using electric circuit analysis, the reasons which affected its error were gotten. based on theory analyses, initial structure was designed. then by using fem ( finite element method ) of simple resonance field, several structures electromagnetic field was calculated, and their amplitude errors, phase errors, maximum of electric field intensity and frequency characteristic of amplitude error were contrasted

    本文從理論上分析了電阻式電壓傳感器的誤差，用電路分析法定性的研究了影響電阻分壓器誤差的因素；在理論分析的基礎上進行了電阻分壓器結構的初步設計；基於該設計，利用簡諧場的有限元方法進行了場的計算，比較了幾種結構方案的幅值誤差、相角誤差、最大場強值及其幅值誤差的頻率特性，從而得到一種最優方案；製作了分壓器樣機，並在本實驗室進行了實驗；最後，對電子電路部分進行了初步設計，並提出了抗干擾的措施。
  14. It is very important to the electromagnetic simulations. this paper base on the theory and method of electromagnetic calculation and fdtd, associate with the particle simulation technology, develop an algorithm to resolve the problem of the eigenmode analysis of the cold - cavity in practice

    本文從分析電磁場計算的基本原理和方法出發，立足於時域有限差分法，結合計算機粒子模擬技術和數值計算原理，開發出一種能夠分析計算高功率微波器件冷腔諧振頻率以及本徵模式的演算法。
  15. In addition, this paper has analyzed and calculated the wave - guide mode theory, got the quantum well laser photic - field distribution ' s fluctuation equation, deduced the far - field distribution ' s mathematics model by the method of stepwise approached, and simulated the near - field and far - field about the laser with computer software. we utilized a pair of mode expand layers which can restricted in photic - field to narrowed the far - field comer about quantum well laser material structure ( the corner was about 21 ?

    另外本文還對光波導模式理論進行了理論分析和計算，得到了量子阱激光器光場分佈的波動方程，利用逐步逼近的方法推導出了遠場分佈的數值模型，通過計算機軟體模擬出了激光器遠近場分布圖，並利用模式擴展層對光場的限製作用得到了窄遠場發散角（約為21 ）的量子阱激光器材料結構。
  16. Hi designing the edge detection algorithm, the multi - scales character of the wavelet change and the character of the b - spline function as a best smoothing filter are combined. based on the scheme of local modulus maxima, a b - spline wavelet function is designed to detect the edge points

    在邊緣檢測演算法中，我們結合了子波分析的多尺度特性和b -樣條函數最優平滑濾波器的特性，採用模極大值和b -樣條子波進行邊緣檢測。
  17. Compared with to traditional aotf applied in oadm, we advanced a novel collinear iaotf. then we analyzed the novel device using collinear acoustic - optic interaction modeling in pe : linbo3 waveguide. the numerical results show that this device is better than traditional aotf, and we acquired some optimized device parameters

    然後利用質子交換鈮酸鋰波導中的共線聲光互作用模型對這種器件進行了理論分析和數值計算，證明其性能優于傳統的aotf器件，並得到器件的波導深度
  18. The sense of this work is to gain a further understanding of helium in the two metals. on the diffusion of helium - 3 in two spherical shell samples made of 21 - 6 - 9 type of stainless steel, during the storage of tritium at the pressure of 6. 13mpa for about 4 and 6 years at room temperature and later exposed to air for another 3 and 1 year. first, a calculation based on the analytical and numerical method to the diffusion and decay theories was developed to evaluate the concentration distribution of helium - 3 by tritium diffusion and decay in the samples

    在不銹鋼氚衰變~ 3he的擴散行為研究中，建立了氚和~ 3he濃度分佈的解析解和數值計算方法，以評估充氚不銹鋼球形容器壁中氚衰變~ 3he的宏觀濃度分佈，同時還用數值計算方法以求解氚和~ 3he的多步擴散行為；對樣品表面逐層蝕刻、同時收集釋放的~ 3he進行分析，分別實測了經室溫條件下在6 . 13mpa高壓氚中貯存4年和6年、空氣中存放3年和1年的兩種21 - 6 - 9不銹鋼球殼樣品內壁中~ 3he濃度分佈；結果表明：由於he在金屬中的不可容性， he原子偏聚于不銹鋼表面以及內部的局部區域，在整體趨勢上， ~ 3he分佈與計算結果相一致，根據理論計算，兩種21 - 6 - 9不銹鋼球殼樣品內壁中~ 3he到達的深度分別為350 m及500 m 。
  19. With numerical calculations, the influences of device structure, material parameters and operating conditions on the distributions of the equipotential line, current density, carrier concentration, optical field and temperature profiles have been investigated, and the interactions between the correlative characteristics have been studied at the same time

    通過對這些相互關聯的特性進行數值計算，分析了器件結構、材料參數和工作條件等對等勢線分佈、注入有源區的電流密度、有源區中的載流子濃度、光場強度以及溫度分佈的影響，並研究了這些特性之間的相互影響。
  20. The analyzing model was established, and a novel inner - cladding structure of dcf with higher performance was designed. integrated by the absorption and emission characteristics of rare - earth - ions in dcf and the ld ' s pumping principle with its relative references, the - academic model of high power dcf laser with f - p cavity was based, by using methods of numerical analysis, the high power dcf laser was simulation with good results and consistency

    結合稀土離子的吸收及發射特性及二極體泵浦固體激光原理，應用相關的理論建立了高功率f - p腔型光纖激光器的理論分析模型，利用matlab 、 mathcad ， origin等軟體，採用數值計算及分析方法，結合具體參量數值對實驗進行了模擬分析，並研究了不同特性參量對激光器性能的影響。
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