弛豫法 的英文怎麼說
中文拼音 [chíyùfǎ]
弛豫法
英文
relaxation method-
By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs
本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。In this paper, pmnt, pznt single crystals in the vicinity of the morphotropic phase boundary were obtained by high - temperature solution technique. the growth, structure and phase stability of single crystals were studied. the results are shown as follows : 1
本論文採用高溫熔液法技術，對用高溫熔液法生長弛豫鐵電單晶材料工藝進行了研究，成功地制備出準同型相界附近的pmnt 、 pznt單晶材料，分析了晶體形成、晶體結構及其相結構穩定性，並對生長機理作了初步探索，主要研究結論如下： 1Orthogonal test method of annealing conditions for relaxor ferroelectric ceramics
弛豫鐵電陶瓷最佳退火條件的正交試驗法The relaxation oscillation in solid - state laser with relaxation oscillation pumping is studied theoretically by the rate equation. the undulation of the laser photon density contains relaxation oscillation frequency itself and that of pumping. when those two frequencies are close, the oscillation will be resonated
我們用速率方程小信號近似方法對泵浦帶有弛豫振蕩的固體激光器的弛豫振蕩的特性進行了系統的理論研究，發現實際光子數的起伏同時具有自身固有的弛豫振蕩頻率和泵浦光的弛豫振蕩頻率兩種分量。Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors
我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。This paper gives the general kinetics equation as well as the critical shear stress value ( or the critical press gradient value ) when the chain structure breaks down, and the method to get the structure relaxation time in the " structure capture particle " process
給出了電流變響應過程的一般動力學控制方程以及鏈崩潰時臨界的剪切應力值（壓力梯度值） ，及俘獲粒子過程中有關結構弛豫時間的求法。Results from various measurement technique show that sige films grown by uhvcvd have higher crystal quality than those by ssmbe and gsmbe. and uhvcvd is proposed to be employed in the further work of our sige - oi fabrication
從這些測試結果可以得出， uhvcvd方法可以生長的高質量、未弛豫的sige薄膜，而ssmbe和gsmbe生長的sige層都發生了一定程度的弛豫，晶體質量相對較差。分享友人