弱熱電子 的英文怎麼說
中文拼音 [ruòrèdiànzi]
弱熱電子
英文
near thermal electron-
Because the lattice vibration is weak at very low temperature, the contributions of electrics and other low energy excitations become dominant parts of specific heat. therefore, we can study the micromechanism of many physical phenomena from specific heat measurement
在很低的溫度下，由於晶格振動變得很弱，電子和低能激發貢獻越來越突出，這對我們通過低溫比熱研究很多現象的微觀機制十分有利。Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique
利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet. its advantages are as fellow : no latch - up effect, better capability of resisting invalidation, much smaller parasitic capacitance, weaker hot - carrier effect and short - channel effects, and simpler technics, and so on
通過與體硅bjmosfet比較，討論和分析了soibjmosfet的優點：無閂鎖效應、抗軟失效能力強、寄生電容大大降低、熱載流子效應減弱、減弱了短溝道效應、工藝簡單等。The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content. in this paper, the electrical conductivity reaches maximum value at x = 0. 4. below the temperature corresponding to the maximum value, the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism, charge compensation of oxygen vacancy dominates electrical conduction at high temperature, and oxygen vacancy acts as traps to catch carriers, resulting in the decrease of carriers concentration and mobility
通過電學和熱學性能測試結果表明，電導率隨著sr含量的增加以及溫度的變化都出現了極大值，在本論文中，在sr含量為0 . 4時電導率值最大，電導率最大值對應的溫度隨著sr含量的增加而降低，這是由於在低溫下以小極化子導電機理為主，在高溫階段則是氧空位的電荷補償占據主導作用，氧空位使得載流子的濃度和可動性減弱，從而導致電導率降低。Some classes of explicit and exact travelling wave solutions of a nonlinear dispersive - disspative equation ， which describes weak nonlinear ion - acoustic waves in a plasma consisting of cold ions and warm electrons ， are obtained by a kind of com bination of the direct algebraic method and the ansatze method. some results of other papers can be regard as a special case. the method in this paper can also be applied to the higher dimensional nonlinear evolution equations
本文通過直接代數方法與假設方法的一種結合求出了一個用於描述由冷離子和熱電子組成的等離子體弱非線性離子聲波演化的非線性色散-耗散方程的幾類顯式精確行波解.這里的結果包含已有文獻的結果作為特例.本文的方法也適用於高維非線性發展方程分享友人