摻金的 的英文怎麼說

中文拼音 [chānjīnde]
摻金的 英文
au-doped
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 金 : Ⅰ名詞1 （金屬） metals 2 （錢） money 3 （古時金屬制的打擊樂器） ancient metal percussion instrum...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 金的 : auric
  1. Different metals are blended together to make alloys.

    合金由不同的金屬摻合製成。
  2. Iron and zinc doping can lower the transformation temperature of anatase to rutile

    鐵及鋅的摻雜會降低銳鈦晶向金紅石的轉變溫度。
  3. A novel materials design procedure based on the co - doping of metal nanoparticle and azo dye compound ( mnpadc ) is developed to improve the properties of functional molecules

    為改善功能分子的特性，提出一種基於金屬納米粒子偶氮染料復合物共摻雜超分子結構功能材料的設計新方法。
  4. In manganite perovskites, substitution of divalent ions ( alkaline earth metals viz. ca, sr, ba ) in the a sublattice, introduces mn4 + ions or holes into the system. it is generally considered that the concentration of holes is equal to the concentration of divalent cations because of the charge compensation by controlled valencies

    在類鈣鈦礦型晶體結構中通過摻入二價堿土金屬（如ca ， sr ， ba ）可以在系統中產生mn ~ （ 4 + ）或氧空位，由價格補償的原理，理論上摻入的二價離子的濃度和氧空位的濃度相等。
  5. Ca, sr, ba ) in the a sublattice, introduces mn4 + ions or holes into the system. it is generally considered that the concentration of holes is equal to the concentration of divalent cations because of the charge compensation by controlled valencies. a number of publications exist in the literature on the synthesis of manganite perovskites

    在類鈣鈦礦型晶體結構中通過摻入二價堿土金屬（如ca ， sr ， ba ）可以在系統中產生mn ~ （ 4 + ）或氧空位，由價位補償的原理，理論上摻入的二價離子的濃度和氧空位的濃度相等。
  6. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  7. The aim of the thesis was that the pure cdte thin films were adulterated by the influx technique with different metals, and then we have investigated its configuration and photoelectricity after the anneal treatment

    目前，用離子注入的方法在cdte薄膜中摻雜的文獻報道的很少。本工作目的就是採用離子束注入的方法對純cdte薄膜進行不同金屬元素的摻雜及熱處理，研究其結構和光電特性。
  8. It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature

    （ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。
  9. This effect was gradually decreased with the increase of snte content in the pseudo - binary alloys as well as the increase of temperature, which is considered to be caused by the change of scattering mechanism, the saturation of carrier concentration as well as the ag atoms occupying the

    隨著膺ti合金rfsnte含量和測試溫度的上升， ag摻雜的作用逐漸降低，胸二兒合金的性能逐漸惡化。其原因被認為是由於散射機制的改變、載流子濃度趨于飽和以及ag作為間隙原一了提供額外施主。
  10. Morphology of b - doped diamond had been observed by sem. boron contents and impurity situation of b - doped diamond had been analyzed by ftir / raman and xrf

    對含硼金剛石在sem下進行形貌觀察，通過紅外拉曼光譜、 x射線熒光（ xrf ）分析硼摻雜的存在狀態和含量。
  11. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  12. However, the switching power loss of si p - i - n diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au, pt or radiation to lower the stored charge ( qs )

    但是，其開關功耗隨著開關頻率的提高而增大以至於不得不採用壽命控制技術（摻金、鉑和輻照等）來降低少數載流子壽命從而降低開關功耗。
  13. For the material characteristics limitation of si, the switching power loss of si pin diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au, pt or radiation to lower the stored charge ( q., )

    Sipin二極體由於其材料特性的局限性，使開關功耗隨開關頻率的提高而增大，通常採用壽命控制技術（如摻金、鉑和輻照等）降低少數載流子壽命從而降低開關功耗。
  14. The resulting antimony doped tin dioxide thin film has good optical and electrical properties. the mechanism of the film formation in spray pyrolysis method was also discussed. the films were characterized by x - ray diffraction, scanning electron microscopy, atomic force microscopy, ultraviolet and visible transmittance spectroscopy x - ray photoelectron spectroscopy and so on

    在經過深入的文獻查閱和前期研究工作基礎上，本文提出以無機金屬鹽sncl _ 2 ? 2h _ 2o和sbcl _ 3為原料，採用噴霧熱分解法制備得到光學、電學性能優良的摻sb的sno _ 2薄膜，並深入探討了噴霧熱分解法的成膜機理。
  15. A new method of mix - oxide doped electrochromics is described in this paper. the electrochromic layer and the ionized conductance layer are doped with oxide and metal respectively, which highly improve the characters of response and chromic transitivity of the electrochromic apparatus. finally, the experimental results are presented

    本文論述採用混合氧化物摻雜的新方法，對電致變色層和離子導電層分別摻入氧化物和金屬，使電致變色器件響應速度、增大著色透過率變化等方面的特性得到很大改善.最後給出實驗結果
  16. 2 ) the p - n heterjunction effects between b - implanted diamond films and n - type si substrate was investigated

    2 ）研究摻b的金剛石膜和n型si襯底之間的半導體p - n結效應研究。
  17. First, as using difference between " local government fiscal capacity " and " standard expenditure " as foundation to distribute the transfer payment fund, the degree of standardization is quite limited ; second, regression analysis mixes some unreasonable factors of old system, which makes this calculate way have serious shortcomings in technique ; third, this issue itself is also lack of objective and justice ; and fourth, because of the limited fund, the finance transfer payment system ca n ' t balance the fiscal capacity among regions

    但這種方法也存在明顯的不足，用「地方財力」與「標準支出」的差額作為分配轉移支付資金的依據，規范化的程度十分有限；採用回歸法摻雜了一些老體制中的不合理因素，使技術方法有嚴重的缺陷；同時，財政轉移支付的資金十分有限，起不到地區間財力均衡化的作用。
  18. ( 2 ) using the monomer containing the element of nitrogen or silicon, the organic gels doped uniformly by nitrogen or silicon were synthesized and carbonized into nitrogen or silicon - doped carbon xerogels. the carbon xerogels doped by metal elements of cadmium, cerium and zirconium were also prepared by uniformly introducing into cadmium, cerium and zirconium in the synthesis of organic gels precursor. the performance of lithium ion storage and behavior of charge and discharge of these doped carbon anode materials were studied, and the effects of the level of doped elements on the structure of carbon materials, furthermore on the act of storing lithium ions were accompanyingly analysed

    （ 2 ）通過利用含氮、含硅單體合成氮、硅元素均勻摻雜的有機凝膠，以及在前體合成中均勻引入cd 、 ce和zr金屬元素的方法，制備了氮、硅及cd 、 ce和zr均勻摻雜的多孔碳陽極材料，考察了這種摻雜碳陽極材料的儲鋰性能和充放電過程，分析了摻雜元素水平對碳材料結構，從而對其儲鋰行為的影響，並進一步分析了基於有機凝膠的多孔碳陽極材料的儲鋰機制。
  19. The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated

    其中，採用cvd技術制備的以硫為施主的n型金剛石薄膜的遷移率與b單晶金剛石硫摻雜的遷移率達到了相同的量級。
  20. At first, the effect of carbon nanotubes additives on the electrochemical performances of hydrogen storage alloy electrode was investigated. the results showed that the hydrogen storage capacity of the carbon nanotubes was only 123. 0mah / g ( cnt )

    本文首先研究了摻雜碳納米管儲氫合金的電化學性能，所研究的碳納米管的電化學儲氫容量僅為123 . 0mah g （ cnt ） 。
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