摻雜半導體 的英文怎麼說

中文拼音 [chānzábàndǎotǐ]
摻雜半導體 英文
doped semiconductor
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".

    當半導體中加入了施主感受主雜質，我們就說該物質「摻雜」了。
  2. A new laser source of optical communication, erbium - ytterbium codoped phosphate glass waveguide laser that was provided with more prominent performance than semiconductor distribution feedback ( dfb ) laser, has been investigated globally from 1990s. the laser can meet many rigorous demands of wdm systems. the 1. 54 m laser emitted by the laser accords with the interrelated standard of international telecommunications union ( itu ), therefore, a splendent foreground can be predicted about this kind of laser in future optical communication

    基於鉺、鐿摻雜磷酸鹽玻璃基片的光波導激光器是一種新型通信光源，具有傳統的分佈反饋半導體激光器所不能比擬的優點，能滿足波分復用/密集波分復用技術對光源提出的諸多高新要求，所發射的1 . 54 m激光符合國際電信聯盟規范，在未來光通信中有著廣闊的發展前景。
  3. 6. by comparing the relative intensity between 914nm radiation and 1064nm radiation in nd : yvo4 with different nd concentration. we design a 457nm all - solid - state blue laser as pumping source for qpm - opo

    在不同摻雜濃度時， gi4nm譜線與1064urn譜線的輸出強度的相對變化，進廳了半導體激光器泵浦d ： yv0 。
  4. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片，將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術，具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點，可有效解決單片光電集成器件（ oeics ）中光、電兩部分的工藝兼容這一難題。
  5. Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960. the luminescence devices made with the materials had developed quickly. but the pure semiconductor materials could not better because the luminescence efficiencies were lower. doping is very important in order to improve the luminescence efficiency

    半導體發光材料和器件是六十年代發展起來的半導體技術中的一個分支，單一的純凈本徵半導體的性能往往不能滿足實際的需要，發光效率或發光幾率低，發光強度弱，提高發光效率的有效途徑就是進行材料的摻雜改性。
  6. Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion

    硅摻雜半導體立方氮化硼單晶的制備
  7. Using this expression to calculate the optimum rare - earths oxides ( nd2o3, ceo2 and la2o3 ) content of zinc oxide varistor, the quantitative calculation results are in accordance with the experimental results approximately. the double shottky potentical barrier was showed in form of catoon using flash, from which we can comprehend the conduction theory of zinc oxide varistor. the electrical properties of varistor can be improved depend on it

    運用固體物理、半導體和電子薄膜材料的相關理論，建立數學模型，推導出了最佳摻雜含量的理論計算式，並將之推廣到高溫燒結的氧化鋅壓敏陶瓷材料，運用這一計算式定量計算ndzo3 、 ceoz和lazo3等稀土摻雜的最佳含量，計算結果與本文的實驗結果比較符合。
  8. The band structure reveals the form of the impurity levels due to the substitutional impurity in semiconductors

    摻雜模型的能帶結構顯示，由於在半導體母體中進行雜質原子取代而形成了雜質能級。
  9. Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content

    實驗結果表明:隨zr含量的增加， vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降，同時，隨摻雜量的增加， vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。
  10. The studies in existence showed that the solid solutions which based with mg2si and doped with other elements are good thermoelectric semiconductors working at mid - temperature ( 400 - 700k )

    已有的研究表明，以mg _ 2si為基、通過摻雜得到的固溶體是優秀的中溫區（ 400 - 700k ）熱電半導體材料。
  11. As the key part of the thermoelectric generation equipment, thermoelectric material becomes the important research object. in my work, ca3co4o9 semiconductor was synthesized and its thermoelectric properties was improved by different dopants

    作為熱電發電器的核心部分的熱電材料自然成為研究的重點，本論文工作以ca _ 3co _ 4o _ 9半導體為研究對象，通過不同元素摻雜宋改善它的熱電性能，已經取得了良好的效果。
  12. Testing of materials for semiconductor technology ; determination of impurities in carrier gases and dopant gases ; determination of c - c - hydrocarbons in nitrogen by gas - chromatography

    半導體工藝材料的檢驗.運載氣體和摻雜劑氣體中雜質的
  13. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  14. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  15. Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc. because c - bn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ c - bn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ c - bn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  16. Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc., because cbn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ cbn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ cbn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  17. A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes

    摻雜質，摻質劑加入純半導體材料中的少量硼等物質，用於晶體管和二極體中以改變半導體的導電率
  18. The magnetic atoms doped are called magnetic impurities and the nonmagnetic semiconductor is called the based material

    其中被摻入的磁性原子稱作磁性雜質，非磁半導體稱作基質。
  19. There are some creations in this paper. first, the relationship among the physical property, crystal structure, preparation method and doping content is established to be a parabola equation. the extreme value of this equation determines the optimum doping content

    本論文工作的創新點在於：從半導體發光材料的晶體結構出發，建立起材料的物理性能、晶體結構中原子配位數、最佳摻雜含量和制備方法之間的關系，歸納出材料摻雜的最佳摻雜含量的理論表達式。
  20. Doping - the process of the donation of an electron or hole to the conduction process by a dopant

    摻雜-把攙雜劑摻入半導體，通常通過擴散或離子注入工藝實現。
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