擬硅 的英文怎麼說

中文拼音 [nǐguī]
擬硅 英文
eka-silicon
  • 擬 : 動詞1. （設計; 起草） draw up; draft 2. （打算; 想要） intend; plan 3. （模仿） imitate
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  1. As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters

    這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。
  2. Computer simulation of silicon anisotropic etching

    硅各向異性腐蝕的計算機模擬
  3. The experimental results show that these models can express precisely the isotherm hydration heat emission curve of portland cement and the autogenous shrinkage process of concrete prepared with portland cement

    實測數據檢驗結果表明，這2個模型可以用於模擬硅酸鹽水泥的等溫水化放熱曲線，以及用硅酸鹽水泥配製的混凝土的自收縮發展過程。
  4. The temperature distribution on the high temperature side of an electric tunnel furnace is analysed and simulated on the basis of the principle of thermal radiation by the way of thb ( thermal heat balance ). the heated silicon carbon sticks are decomposed into innumerable tiny heating faces, which exchange the heat with the heated materials. a numerical model based on the radiation intensity law is constructed to calculate the energy absorbed by the heated materials and simulated by a computer. the results showed that the even distribution of temperature can be obtained by optimizing the arrangement of the silicon carbon sticks according to the calculation results to make the structure design more reasonable. these calculation results have been used in the practical designs and the expected objectives achieved

    利用熱輻射原理，採用熱平衡法對電熱隧道窯的高溫恆溫區溫場進行了分析和模擬.計算中將發熱棒分解為無數微元發熱面與燒結體進行熱交換，依據輻射強度定律，建立了燒結體接收能量的數學模型，並用計算機進行了模擬計算.結果表明，依據模擬結果來優化硅碳棒的排布，可使結構設計更加合理，進而可以獲得分佈均勻的恆溫區溫場.計算結果已在窯爐設計中應用，實踐效果良好
  5. We select ni / cr alloy resistor as element together with ceramic embedding hearth ; select small flat - and - disc heat - even hubby ceramic sample holder, select ni / cr & ni / si thermoelectric couple ( type k ) as thermoscope with threads 0. 5 mm in diameter which is installed in the middle of the holders symmetrically ; select aluminum silicate fire - retardant fiber as materials for heat preservation ; design some hardware, for example temperature controller & transporter, signal amplifier etc ; design controlling curve to heat stove ; and introduce the method of least squares nonlinear regression and subsection function to deal with data. in order to obtain the reasonable operation conditions and operation curve, we have also done many theory analysis and experiment discussions

    通過理論和試驗探討，選用鎳鉻合金電阻絲作為加熱元件，配以陶瓷質埋入式爐膛；選用陶瓷質小尺寸扁平?圓盤均熱塊體型樣品支持器；選用0 . 5mm絲徑鎳鉻?鎳硅熱電偶（ k ）作為測溫元件；熱電偶對稱安置在樣品支持器容器的中部；選用硅酸鋁耐火纖維作保溫材料；合理選用和設計了溫度控制器、溫度變送器、信號放大電路等硬體；採用升溫曲線來控制爐膛供熱過程；採用最小二乘法非線性回歸與分段函數相結合的曲線模擬方法，進行圖形處理。
  6. 3. a 4. 2ghz vco tuned by an accumulation - mode mos varactor in tsmc 0. 35 m sige bicmos process is obtained after debugging with the simulator spectrerf

    3 .基於tsmc的0 . 35微米鍺硅bicmos工藝，採用spectrerf模擬器進行壓控振蕩器的調試和模擬。
  7. Through direct pullout test, we examine the effect of the water to cement ratio, contend of steel fiber and silica fume on the bond behavior ; compare the bond behavior of two types of cfrp bars with difference surface treatment ( r1 bars and g1 bars ), and reprocess the one of inferior bond strength ; investigate the bond stress distribution along the bond length of cfrp bars, and assess the adequacy of some exist analytical models of bond - slip behavior to reproduce the experimental bond behavior

    本文主要通過直接拉拔試驗，考察水膠比、鋼纖維摻量、硅灰摻量以及cfrp筋的表面處理類型等材料參數對粘結性能的影響，並對粘結效果較差的cfrp筋研究了表面處理方法，以提高cfrp筋與rpc的粘結性能;通過在cfrp筋表面粘貼應變片，測定了粘結應力沿cfrp筋埋長的分佈情況，並對現有的粘結滑移本構模型與試驗結果的擬合效果進行了比較。
  8. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  9. Thirdly, adsorbents used for separating propylene were studied, and agno3 / sio2 with 15. 4 % ag + load showed superior adsorption properties. the adsorptive behavior of propylene was studied and it ' s adsorption balance isotherm was fitted by langmuir equation either

    然後研究了丙烯吸附劑，發現銀離子負載量為15 . 4的gsb硅膠負載agno _ 3 ，吸附劑具有良好的分離丙烯能力，研究了丙烯在該吸附劑上的吸附行為並用langmuir方程擬合了其吸附等溫線。
  10. In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology

    為使二維振動傳感器在兩主軸方向的靈敏度大致相同，敏感元件採用高度對稱的四梁結構，其中每個軸向上均採用帶折疊梁的雙側叉指電容結構，採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件，具有高靈敏度、寬量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算，並利用有限元法進行了模擬分析，根據模擬結果得出了優化參數;在確定敏感結構的基礎上，研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析，利用差動測量技術得到由振動引起的微小電容變化量，經c - v介面電路進行相位調制處理，然後通過解調輸出與加速度成正比的電壓信號。
  11. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值
  12. ( 1 ) for the first time, compositing the chemical compounds of alkaline - earth metal with the adsorption material, 13x molecular sieve, silica gel, and activated alumina to gain a series of composite adsorbents with good performance that higher adsorption capacity and lower regeneration temperature and suitable for adsorption refrigeration systems that can be driven by low - grade thermal energy

    首次將堿土金屬化合物及其鹽類與傳統吸附材料13x分子篩、硅膠和活性氧化鋁等復合，制取具有較高吸附量和較低再生溫度的適合於以低溫熱能驅動的吸附製冷過程的一系列優良復合吸附劑。分別在自製的吸附製冷、除濕製冷模擬實驗裝置上，測得該系列復合吸附劑與水和乙醇組成的吸附製冷工質對的吸附製冷性能以及除濕製冷性能均優于傳統吸附劑（ 13x ，硅膠和活性炭） 。
  13. Development of cmos devices and circuits with sub - 0. 1 m gate length

    新型高頻硅光電負阻器件的特性模擬及測試分析
  14. Because of its excellent properties, such as high strength, high module, wear resisting, and etc., sicp was added to ferroalloy as a reinforce phase. but the intrinsic difference between the bonds led to poor fabrication of the composites. in this paper, the effects of alloying, sintering, and heat - treatment on the properties and microstructures of sicp / ferroalloy - based composites were studied, : it was found that sic particles reacted with ferroalloy when sintered in 1100

    碳化硅因其高強度、高模量、耐熱、耐磨等優良性能而被作為顆粒增強體來制備鐵基復合材料，但因其共價鍵與鐵基體的金屬鍵之間的本質區別導致兩者復合困難，本文擬從基體合金化、燒結及熱處理工藝等方面對鐵合金基復合材料組織與性能的影響進行考察，具體內容如下：加入fe - cu - c基體中的sicp顆粒， 1100燒結時就已經開始發生分解，但反應不強烈，在顆粒表面鍍鎳可以延緩基顆粒與基體之間的反應。
  15. Another increasingly important ( actor is to be integrated with analog and digital circuits. for this reason, it is highly advantageous for the microwave components to be fabricated through a commercial cmos process. so we research the microwave transmission lines and apply it into phase shift

    微型硅基微波傳輸線是微波無源、有源器件及微波集成電路的重要構成基礎，本文首先對其工作原理、器件模擬、結構參數設計、制備及散射參數測試進行較深入全面的研究，並進一步將微波傳輸理論應用於mems移相器，對移相器的結構參數、相移特性及可靠性等進行了分析。
  16. To realize nolinear excitation controller, it must be improved that the disposal speed of nolinear excitation control " s signal. with analyzing and comparing all kinds of microcomputer excitation controller, a new microcomputer excitation control scheme is offered that is based on dsp controller while the cpld chip is utilized for realizing the function of pulse trigger. it is described in detail that the method of realizing controllable silicon digital logic by verilog hardware describe language and the designed digital pulse trigger " s veracity was validated by digital simulation

    論文進一步針對非線性勵磁控制要求信號處理速度高、信息量大的特點，在對目前微機勵磁控制器分析基礎上，提出採用dsp控制器晶元作為核心處理器的微機勵磁控制器的解決方案，運用復雜可編程邏輯器件cpld晶元實現可控硅同步脈沖觸發單元，並簡要說明了verilog硬體描述語言和數字脈沖形成邏輯的方法，通過電路數字模擬對所設計的數字觸發單元進行了驗證。
  17. This paper deals with the monte carlo simulation of high - energy protons transport in silicon, in which the intra - nuclear cascade model is used to deal with proton nuclear reaction process. and the results of radiation effects of proton in silicon and p - seu ( proton induced single event upset ) cross section of some electronic devices are presented

    本文用蒙特卡羅方法對高能質子（最高能量在500mev以上）在硅材料中的輸運過程進行了模擬，作了用核內級聯模型計算質子核反應的嘗試，計算了質子對硅材料的輻射效應及其對硅器件的單粒子效應。
  18. Using commercial fea software, computer simulation is carried on the characteristics of the resonator and the pressure sensitivity for several silicon / silicon nitride beam structures

    應用有限元分析軟體，對硅梁及氮化硅梁的多種結構，進行了計算機模擬，分析了熱激勵諧振器的特性以及壓力敏感特性。
  19. The stress - strain curve of new - old concrete and hprrc, are suggested to be modeled by two sections : the ascending section of the stress - strain curve is simulated by cubic parabola equation and the descending section is simulated by rational fraction, where the theoretical value is in good agreement with the test value. the research results also provide a theoretical basis of earlier stage for improving crack resistance of new - old concrete interface

    新一老硅及hprrc應力一應變全曲線建議採用兩段式擬合:上升段採用三次拋物線方程模擬，下降段採用有理分式模擬，理論值與試驗結果吻合較好。該研究成果為新老混凝土結合面抗裂能力的提高提供了前期的理論基礎。
  20. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
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