放電等離子體 的英文怎麼說

中文拼音 [fàngdiànděnglízitǐ]
放電等離子體 英文
discharge plasma
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 體 : 體構詞成分。
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  • 離子 : [物理學] ion
  1. Study on discharge gas used in color plasma display panel

    彩色等離子體顯示器放電氣體的研究
  2. Experimental results show that the bistable of tuned substrate self - bias was determined by discharge gas pressure, discharge power and tuning circuit parameters etc. the bistable exists is because of there is capacitive coupling in icp system and sheath capacitance is nonlinear

    實驗結果表明這種跳變回滯現象與等離子體的放電氣壓、射頻功率以及調諧外電路的參數等多種因素密切相聯系。而產生跳變回滯現象的原因是icp中存在容性耦合以及鞘層電容具有非線性特性。
  3. Factors influencing disinfection efficacy of atmospheric pressure glow discharge plasma

    大氣壓輝光放電等離子體消毒效果影響因素
  4. Degradation of p - chloronitrobenzene in aqueous solution by contact glow discharge electrolysis

    接觸輝光放電等離子體降解水體中的對氯硝基苯
  5. Study of improvement of graft and dyeability of linen by air dbd plasma surface treatment

    空氣介質阻擋放電等離子體亞麻表面處理提高接枝率研究
  6. Study on electron temperature of pulsed discharge plasma

    大氣脈沖放電等離子體電子溫度的研究
  7. Intense pl band at 300 - 570nm, whose central position was found red - shifted with the increase of o content, was observed in the a - sihxoy thin films fabricated by pecvd. thin films with strong blue pl peaks were prepared by plasma oxidation, and the result directly proved that the blue pl peaks were originated from si - o defect levels

    通過pecvd法與放電等離子體氧化技術結合獲得了主峰位於藍光波段的熒光帶，而且具有分立峰結構，其結果直接證明了藍光發射與缺陷能級有關，起源於si - o結合特定組態而形成的發光中心。
  8. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
  9. The iron covered silicon powder was fabricated separately by the milling method and the mixing method. treated separately at 500, 600, 700, 800, 900 and 1000 for 1 minute, the iron silicon alloy bulk was attained. it also found that the density of the bulk was enhanced by the boost of the treated temperature

    實驗分別採用球磨法和混料法制備鐵硅包覆粉末，採用放電等離子燒結技術分別在500 ， 600 ， 700 ， 800 ， 900 ， 1000保溫一分鐘進行處理，得到鐵硅合金塊體，研究發現，隨著處理溫度的提高，塊體的緻密度隨之增加，顯微結構的分析表明，塊體基本保持了包覆粉末原始自然狀態。
  10. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  11. Abstract : this paper describes the thermal effects of a coaxial rf - excitedco2 laser ， based on the balance equations of electron density and energy ， current continuity equation ， and heat conduction equation. depende ncies of the spatial distributions of gas temperature on some discharge parameters arediscussed

    文摘:通過求解放電等離子體中的帶電粒子密度和能量的平衡方程、電流連續性方程以及熱傳導方程，研究了同軸射頻（ rf ）激勵co2激光器中放電混合氣體的溫度效應，分析了有關放電參數對溫度分佈的影響。
  12. Research on treating tail gases exhausted from diesel engine by pulse corona plasma

    脈沖電暈放電等離子體凈化柴油機尾氣的應用研究
  13. Spark plasma sintering ( sps ) is a kind of new sintering technology for materials synthesis and processing, it has such advantages as high sintering speed, low sintering temperature, it also can retain the origin state of the sintered materials, as such make the sintered materials keep the state of un - equilibrium in this paper, sps was conceived of treating iron covered silicon powder to keeping the origin state of the powder

    放電等離子燒結（ sparkplasmasintering簡稱sps ）是一種材料快速制備新技術，它具有燒結速度快，燒結溫度低，使燒結材料處于遠離平衡狀態，並能保持材料的原有狀態等重要特點。本文設想制各出鐵硅包覆粉末，再利用sps進行遠離平衡狀態的處理，來獲得保持原始粉末自然狀態的合金塊體。
  14. The degradation of nitrobenzene, p - chloronitrobenzene and chloroanilines in aqueous solution were investigated by means of contact glow discharge electrolysis

    利用接觸輝光放電等離子體對水體中有機污染物氯代苯胺、硝基苯、對氯硝基苯等進行了降解。
  15. Gas discharge plasma

    氣體放電等離子體
  16. Structure design of catalysts gas for discharge plasma based on electric field analysis

    放電等離子體用催化劑結構設計中的電場分析
  17. The oxidation of sulfite is an important process in flue gas desulfurization by ammonia method

    摘要使用氣體放電等離子體對較高濃度的亞硫酸鈉進行氧化，在不同電壓和頻率條件下進行了實驗。
  18. Aimed at engine emission problems, the application of non - thermal plasma technology were introduced and tested, the trend of test results is conformed with the theory of this technology

    摘要針對柴油機的排放物嚴重污染環境的問題，提出了利用脈沖電暈放電等離子體凈化柴油機尾氣，效果良好。通過實驗得出結果的趨勢與機理實驗基本是符合的。
  19. Pulse electric current sintering is an advanced technology for materials synthesis and one of effective methods for preparation nano - structure ceramic. but the sintering mechanism is different with traditional sintering method. the sintering phenomena of oxide nano - powders have been investigated in this paper

    放電等離子體燒結技術（ sps ）是材料制備新技術之一，也是制備納米相陶瓷的有效方法之一，但燒結金屬氧化物納米粉末過程中的緻密化機理與傳統理論有一定的區別，本文對脈沖電流燒結金屬氧化物納米粉末進行了系統研究。
  20. Cosb3 nano - powders were used as starting materials, and bulk thermoelectric materials were prepared by spark plasma sintering ( sps ). we have investigated the influence of sintering temperature and sintering time on grains size

    以納米和微米cosb _ 3粉末為原料，用放電等離子燒結（ sps ）方法制備cosb _ 3塊體材料，並探討了燒結溫度和時間對燒結體晶粒尺寸的影響。
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