整流半導體 的英文怎麼說

中文拼音 [zhěngliúbàndǎo]
整流半導體 英文
diode
  • : Ⅰ形容詞1 (全部在內; 完整) whole; all; complete 2 (整齊) neat; tidy; orderly Ⅱ動詞1 (整理; 整...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • : Ⅰ數詞1 (二分之一) half 2 (在 中間的) in the middle; halfway 3 (比喻很少) very little; the l...
  • : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
  • : 體構詞成分。
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率量子阱激光器是一種性能優越的發光器件,具有壽命長、閾值電密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點,廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是個激光器器件製作的基礎,對器件的光學和電學性能有著重要的影響,生長不出優質的材料系,獲得高性能的器件就無從談起,因此,材料的外延生長便成為了激光器製作過程之中的重中之重。
  2. Semiconductor rectifier equipments for telecommunications

    通信用設備
  3. Scr ( silicon controlled rectifier ) or thyrister can also be substituted for the contactor

    也可以用可控硅器或者是管。
  4. A scr ( silicon controlled rectifier ) or thyrister can also be substituted for the contactor

    也可以用可控硅器或者是管。
  5. For phonetic signal modulation, if the pass band range of the band pass filter ( bpf ) is 300hz - 3400hz, the anti - noise properties of laser are approximately independent of bias current and parameters of the cavity ; when the pass band range of bpf increases to a certain degree, modulating bias current and parameters of the cavity can improve the anti - noise properties of laser

    對語音調制情況,如帶通濾波器的通帶范圍取為300hz - 3400hz ,則激光器的抗噪聲性能基本不依賴于偏置電和腔內參數;當帶通濾波器的通帶范圍增大到一定程度,調偏置電和腔內參數可以實現激光器的高抗噪聲性能。
  6. Static power convertors ; semiconductor rectifier equipment for trickle charging of lead - acid batteries

    靜態功率變器.鉛酸蓄電池滴充電用器設
  7. Practices and requirements for semiconductor power rectifier transformers

    電力器變壓器的要求和實施規范
  8. Static power convertors ; semiconductor rectifier equipment, examples of characteristic curves for battery chargers

    靜態功率轉換器.設備.蓄電池充電器特性曲
  9. Static power convertors ; semiconductor convertor equipment ; rating code

    靜態電源轉換器.設備.額定值代碼
  10. Semiconductor discrete device. detail specification for silicon rectifier diode for type 2cz101

    分立器件. 2cz101型硅開關二極詳細規范
  11. Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz73

    分立器件. 2cz73型硅開關二極詳細規范
  12. Semiconductor discrete devices. detail specification for type 2cz10 silicon switching rectifier diode

    分立器件. 2cz10型硅開關二極詳細規范
  13. Semiconductor discrete device. detail specification for silicon switch - rectifier diode for type 2cz75

    分立器件. 2cz75型硅開關二極詳細規范
  14. Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz74

    分立器件. 2cz74型硅開關二極詳細規范
  15. Nanoparticles are attracting a great deal of attention due to their interesting morphologies and particular properties. selenium is an important semiconductor material and a necessary trace element for human body

    硒是重要的材料,具有優良的光電性能,可用於太陽能電池、器、硒鼓等光電子學領域。
  16. Semiconductor discrete device detail specification for type ql50 in use for automotive nine diodes bridge rectifying modules

    分立器件ql50型機動車用九管橋式組件詳細規范
  17. Semiconductor discrete device. detail specification for type 2cz30 silicon rectifier diode

    分立器件. 2cz30型硅二極詳細規范
  18. Semiconductor discrete device. detail specification for type 2cz59 silicon rectifier diode

    分立器件. 2cz59型硅二極詳細規范
  19. Semiconductor discrete device. detail specification for type 2cz58 silicon rectifier diode

    分立器件. 2cz58型硅二極詳細規范
  20. Semiconductor convertors - part 2 : self - commutated semiconductor convertors including direct d. c. convertors iec 60146 - 2 : 1999 ; german version en 60146 - 2 : 2000

    器.第2部分:包括直器的自整流半導體
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