文件中的空穴 的英文怎麼說

中文拼音 [wénjiànzhōngdekōngxué]
文件中的空穴 英文
hole in a file
  • 文 : Ⅰ名詞1 （字） character; script; writing 2 （文字） language 3 （文章） literary composition; wri...
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 的 : 4次方是 The fourth power of 2 is direction
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 文件 : 1 （公文、信件等） document; file; papers; instrument 2 [自動化] file; 文件保護 file protection; ...
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  1. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  2. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  3. The research work of the thesis include mainly : ( 1 ) observe a phenomenon which the two fracture modes are simultaneously found near crack tip of a four - point - bend specimen when the ratio of m / q is close to 3. 0mm, criteria m / q, when the fracture mode of four - point - bend specimen transits from void - mode to shear - mode. intensely location plastic distortion is observed in the front of crack tip and the macro - fracture of the specimen with the same m / q belongs to shear - mode fracture

    本文主要在以下幾個方面取得了一定的進展：通過四點彎試件的斷口和切片試驗，觀察到裂紋尖端同時存在兩種斷裂機制? ?在兩種斷裂模式相互轉化的臨界狀態附近，裂紋前方既有鈍化和延伸區中的空穴形核擴張，又有銳化角前劇烈的集中剪切變形。
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