旋轉晶體法 的英文怎麼說

中文拼音 [xuánzhuǎnjīng]
旋轉晶體法 英文
revolving-crystal method
  • : 旋Ⅰ動詞1 (旋轉) whirl 2 (用車床切削或用刀子轉著圈地削) turn sth on a lathe; lathe; pare Ⅱ名詞...
  • : 轉構詞成分。
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • : Ⅰ名詞1 (由國家制定或認可的行為規則的總稱) law 2 (方法; 方式) way; method; mode; means 3 (標...
  • 旋轉 : revolve; gyrate; rotate; spin ; revolution; revolvement; rotation; circumgyration; circulation
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Here is the result, during yvo4 odd - crystal growing under cz method, while fusibility contain nature - convection by temp - grads and impose - convection by crystal - circumvolve, which make it difficult to growth large dimension odd - crystal

    數值模擬的結果表明,在cz生長yvo _ 4單過程中,由於熔中存在著因溫度梯度引起的自然對流和引起的強迫對流,使生長大尺寸單有著一定的困難。
  2. Our approach differs from a recent theoretical paper that dealt with the possible conservation of the combined spin and orbital angular momentum in relation to the susceptibility of the down - conversion crystal

    我們的方與新近一些理論文章提出的方是不一樣的,他們處理自角動量和軌道角動量可能的守恆當中涉及到了下的磁化系數。
  3. According to the request of this subject, we have developed the system hardware and software for the slave device and the inspection software running on the pc. in this paper all of the followings is illustrated detailedly, such as the research on the principles of measurement and its realization, three means of water - level measurement that are separately based on photo electricity coder, pressure sensor and potentiometer ; selection of the microchip, we choose an advanced integrated soc ( system on chip ) microchip c8051f021 as the main controller ; realization of signal sampling, processing and its conversion in the mcu ; application of high precision 16 bits adc cmos chip - - ad7705 in our system, designing its interface with the microchip and relevant program ; using a trickle charge timekeeping chip ds1302 in the system which can provide time norm and designing of its i / o interface and program ; additionally, a 4 ~ 20ma current output channel to provide system check - up using ad421. in the system, ad421, ad7705 and the microchip compose spi bus ; to communicate with the master pc, here we use two ways which are separately rs232 and rs485 ; moreover, there are alarm unit, keyboard unit, power supply inspection unit and voltage norm providing unit in the system

    針對研製任務的要求,課題期間研製了下位機系統硬和軟,開發了上位機監控軟,其中所作的具工作包括:測量原理的研究和在系統中的實現,在本次設計中用三種方來進行水位測量,分別是編碼器、液位壓力傳感器和可變電阻器;主控元的選擇,我們選用了高集成度的混合信號系統級元c8051f021 ;實現了信號的採集和處理,包括信號的換和在單片機內的運算;高集成度16位模數元ad7705在系統中的應用,我們完成了它與單片機的介面設計及程序編制任務;精確時鐘元ds1302在系統中的應用,在此,我們實現了用單片機的i o口與ds1302的連接和在軟中對時序的模擬,該元的應用給整臺儀器提供了時間基準,方便了儀器的使用;另外,針對研製任務的要求,還給系統加上了一路4 20ma模擬信號電流環的輸出電路來提供系統監測,該部分的實現是通過採用ad421元來完成的,本設計中完成了ad421與單片機的spi介面任務,協調了它與ad7705元和單片機共同構成的spi總線系統的關系,並完成了程序設計;與上位機的通信介面設計,該部分通過兩種方實現: rs232通信方式和rs485通信方式;系統設計方面還包括報警電路設計、操作鍵盤設計、電源監控電路設計、電壓基準電路的設計。
  4. Crystal rotation method

  5. To make cds / k4nb6o17 powder on the base of the k4nb6o17 powder which by the courses of ion exchanging, amine intercalation, sulfuration etc. to obtain cds / k4nb6o17 thin film through the same course of making cds / k4nb6o17 powder on the base of k4nb3o17 thin film on the quartz which made by the spin coating and after heat treatment. to make experiments with additives ( na2so3, 0. 1mol / l ) of photocatalytically decomposing water into h2 and o2 to evaluate the photocatalytic activities of the catalyst knb6o17 powder, cds / k4nb6o17 powder, k4nb6o17 film, cds / k4nb6o17 film. the crystalline structures of the midst powder and film productions were investigated by using the x - ray diffraction ( xrd )

    本課題的主要內容是:高溫固相反應合成具有層狀結構的k _ 4nb _ 6o _ ( 17 )材料,然後以此為母材料,通過離子交換、層間胺插入、硫化處理等過程制備出cds / h _ 4nb _ 6o _ ( 17 )粉末形式的光催化材料;通過塗覆在石英玻璃基片上制備了k _ 4nb _ 6o _ ( 17 )薄膜,採用一定的熱處理制度后對薄膜分別進行離子交換、層間胺插入、硫化處理等處理過程制備了cds / h _ 4nb _ 6o _ ( 17 )薄膜形式的光催化材料。
  6. The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface

    結果表明:材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素,採用改進的富鎘氣氛下坩鍋下降生長的具有較低的缺陷濃度,適合製作探測器,採用au 、 c可得到歐姆接觸。
  7. Methods using nuclear raising and rotating with two lens diallers, we had finished the catarat extraction through small incision combined with iol implantation in 266 cases ( 275 eyes ) of cataract patients

    對266例( 275眼)白內障採用雙鉤使核翹起和的方娩出核,完成小切口白內障摘出及人工植入術。
  8. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔溫度振蕩在石英安瓿中將6n的單質cd 、 zn 、 te合成多原料,用坩鍋下降在同一安瓿中生長出尺寸為20 40mm的cd _ ( 1 - x ) zn _ xte。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究,製作了厚1 ? 1 . 5mm的探測器,測試了c 、 in 、 au等不同金屬的電極接觸性能,並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析,同時測得的~ ( 241 ) am源的能譜。
  9. In crystal growth experiment, aggas2 crystal was growen in special quartz ampoule by crucible descending method ( b - s method ). the equipments were used, which consist of a two - zone vertical growth furnace whose temperature gradient is tunable, a descending device with decelerating rate of 1 : 2000, a controlling system of electy and a temperature testing system using thermal couples

    生長實驗中,我們利用上下溫度梯度可調的二溫區管式生長爐, 1 2000減速比的下降系統,電氣控制系統和密集適時測溫系統等,在特殊形狀的石英生長安瓿中,採用坩堝下降( b - s) ,以合成的aggas _ 2多原料進行生長。
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