族半導體 的英文怎麼說

中文拼音 [bàndǎo]
族半導體 英文
group iii v semiconductor
  • : 名詞1 (家族) clan 2 (古代的一種酷刑) a death penalty in ancient china imposed on an offender ...
  • : Ⅰ數詞1 (二分之一) half 2 (在 中間的) in the middle; halfway 3 (比喻很少) very little; the l...
  • : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
  • : 體構詞成分。
  1. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼( cbn )是一種人工合成的寬帶隙-化合物材料,它有許多優異的物理化學性質,在力學、熱學、光學、電子學等方面有著非常誘人的應用前景,多年來一直吸引著國內外眾多研究者的興趣。
  2. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶是一種電學性能優越的-化合物材料,以其為襯底製作的器件及集成電路,由於具有信息處理速度快等優點而受到青睞,成為近年來研究的熱點。
  3. Iii - v semiconductors are important candidate materials for optoelectronic devices

    -化合物是製作固發光器件的重要材料。
  4. Current optical chips, of the kind used as lasers in cd players and as photodetectors in telecommunications switches, are manufactured from iii - v semiconductors

    目前cd唱盤里的雷射,以及電訊開關里的光偵測器之類的光學晶片,是以第iii與第v族半導體製成的。
  5. In this work of part 1, as a main body of this dissertation, multiple experimental methods are applied to investigate the optical properties of gap1 - xnx alloys with the n composition varying from 0. 05 % to 3. 1 %. in part 2, the transient photoluminescence of iii - v semiconductor gainp and algainp alloys are studied

    隨著與氮有關的化合物在短波發光器件(如藍色發光二極和紫色激光器件等)方面的巨大應用潛力和發展, gapn作為一種新型的含氮-化合物材料,其光電性質引起了人們的關注。
  6. Zno is a direct wide band - gap ii - vi semiconductor material

    氧化鋅是一種-寬禁帶氧化物材料。
  7. Synthesis and dimension control of nanometer - sized - semiconductors

    族半導體納米材料的制備與尺寸控制
  8. Recent progress in synthesis of - group semiconductor nanometer particles

    族半導體納米粒子合成的進展
  9. Study on the adsorption property to n2 on the surface of - semiconductor nanocrystals

    族半導體納米晶表面對氮分子的吸附作用
  10. Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅( zno )是一種具有六方結構的的寬禁帶-族半導體材料,室溫下能帶帶隙eg為3 . 37ev 。
  11. Zinc oxide is a ii - iv wide band - gap ( eg = 3. 37ev ) compound semiconductor with wurtzite crystal structure

    六角纖鋅礦結構的氧化鋅是一種重要的寬帶隙-族半導體材料,室溫下帶隙為3 . 37ev 。
  12. Wide band - gap ii - vi semiconductor materials such as zns, znse have been thought as one of the most import materials for their potential in the optoelectronic

    寬帶?族半導體材料如zns 、 znse因其優異的光電特性成為藍綠發光和激光光電子器件的重要候選材料。
  13. The material studied in this paper is a novel kind of semiconductor material which is fabricated by incorporating magnetic transition metal ion mn + into ih - v semiconductor compound gaas

    本論文所研究的dms材料便是由磁性過渡金屬離子mn ~ +摻入-族半導體化合物gaas中而形成的一類新的材料。
  14. As a direct wide - band - gap ii - vi semiconductor, znse single crystal has been identified as an important contender for the fabrication of blue - green light - diodes, nonlinear optic - electronic components and infrared devices

    Znse作為最重要的寬禁帶-族半導體,其單晶在蘭綠光發射器件、非線性光電器件和紅外器件方面有著廣泛的應用。
  15. Usually, gaas is employed as substrate for the growth of wide band - gap ii - vi semiconductors due to their similarities in lattice constant. however, as a mature semiconductor material, si has serves electronics greatly

    以往的寬帶-族半導體都是以gaas為襯底材料的,這就造成了寬帶-族半導體光電子材料與si基微電子技術的分離。
  16. According to the raman selection rule and the pl measurement, it is reasonable to evaluate the quality of galnp / algalnp mqw by analyzing the relative intensity ratio of a1p - lo / to. ( 4 ) a new modified random element isodisplacement ( mrei ) model is set up to calculate the dependence between the long - wavelength optical phonon frequencies and the composition of iii - v - type ab1 - xcx mixed crystals. the second neighbor force constants are still assumed to be a linear variation with the composition, but the two first neighbor force constants can be evaluated to be a negative exponent variation with the composition, using the overlapped repulsive potential of the ion crystal combination

    通過實驗我們找到了在這些結構參數上生產gainp algainpmqw的較理想的結果; ( 3 )首次用喇曼( raman )散射方法研究了常溫下的gainp algainp多量子阱結構,除了指認出喇曼光譜中各光學聲子模外,還結合樣品光致發光譜的測量結果,分析發現喇曼光譜中alp - lo to的相對強度比可以在一定程度上評定晶gainp algainpmqw的生長質量; ( 4 )在修正的隨機元素等位移? mrei模型的基礎上建立了一個新模型,計算了ab _ ( 1 - x ) c _ x型?族半導體混晶的長波長光學聲子模頻率的組分變化關系。
  17. Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties

    氧化鋅( zno )是一種具有六方纖鋅礦晶結構的寬禁帶ii - vi族半導體材料,由於其優良的特性,在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。
  18. Zno is a - semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties

    氧化鋅( zno )是一種具有六方纖鋅礦晶結構的寬禁帶-族半導體材料,由於其優良的物理特性, zno薄膜在太陽能電池、紫外探測器、發光顯示器件、聲表面波器件、氣敏傳感器等方面得到了廣泛的應用。
  19. Low dimensional ii - vi semiconductor structure is one of ideal material for exciton nonlinear optical devices at room - temperature and greem - blue emission devices due to it ' s large exciton binding energy and strong room - temperature exciton effect. thus the excitonic effects in ii - vi semiconductor quantum wells and asymmetric double quantum wells have been studied deeply and widely

    特別是-族半導體低維結構由於較大的激子束縛能和強的室溫激子效應,使它有希望成為制備室溫激子非線性器件和藍綠光器件的理想候選材料之一,為此-族半導體量子阱和非對稱雙量子阱的激子效應已被很深入地研究。
  20. In view of the trend in semiconductor market at home and abroad, sisemi has decided to expand its business. we have built a new 5 " power ic wafer fab and put into service. the new 5 " wafer fab will be 0. 35 - 0. 80um process, specialized in power mosfet, igbt, smart power ic. sisemi hopes to cooperate with all those who are far - sighted and interested in china s semiconductor market to search for a way to mutual prosperity

    發展民族半導體產業是中國大力發展產業的宗旨,深愛公司以發展民族半導體產業為己任,獨立自主,依靠自己的力量,不斷吸收消化國外的先進技術,研製生產具有獨立知識產權的產品同洋產品爭市場,在業界具有頗高的知名度,產品在國內綠色照明領域具有較高的品牌效應。
分享友人