晶元製作工藝 的英文怎麼說
中文拼音 [jīngyuánzhìzuògōngyì]
晶元製作工藝
英文
chip process-
The leec biochip can be connected with pcb ( printed circuit board ), thus it can generate a moving electric field by changing time, scope and field intensity discretionarily under single chip processor ' s control. meanwhile it is probable to reduce driving voltage and decrease temperature greatly, and so increase resolution of dna separation
研究內容包括線性分散式電極陣列的理論設計，以普通載波片和有機高聚物pdms （ polydimethylsiloxane ）為基本材料的晶元製作工藝， leec晶元和pcb板的連接方式，硬體控制系統的設計以及控制晶元工作的單片機程序編制等，此外還包括電化學檢測方法的研究。In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology
為使二維振動傳感器在兩主軸方向的靈敏度大致相同，敏感元件採用高度對稱的四梁結構，其中每個軸向上均採用帶折疊梁的雙側叉指電容結構，採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件，具有高靈敏度、寬量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算，並利用有限元法進行了模擬分析，根據模擬結果得出了優化參數;在確定敏感結構的基礎上，研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析，利用差動測量技術得到由振動引起的微小電容變化量，經c - v介面電路進行相位調制處理，然後通過解調輸出與加速度成正比的電壓信號。This regulator can generate output voltage as high as 12v with wide input voltage range of 2. 6v to 5. 5v. it has the advantages of high - precision, simple circuit, low power consumption, wide temperature range of - 25 to 85 and 90 % high convert efficiency. at the same time, the ic has two switching frequencies ( 640khz or 1. 2mhz selectable ), under - voltage protection and programmable soft - start
該晶元採用0 . 6微米bcd工藝製程，在2 . 6v 5 . 5v的輸入電壓范圍內可實現高達12v的升壓功能，工作溫度范圍為- 25 85 ，轉換效率達到90 % ，具有實現電路簡單、輸出電壓精度高、功耗低等優點。The accelerometer which has simple fabricated process and high sensitivity and small parasitic capacitance and residual stress is hybrid integrated with the interface circuit using ic nude chip. so the density of the package is increased, and the noise of the sensing system is decreased. these found the base of capacitive accelerometer module using the mcm method
該傳感器製作工藝簡單，靈敏度高，支撐梁採用u型，減小了刻蝕后的殘余應力，用玻璃作為襯底，減小了襯底和硅可動質量塊間的寄生電容，且把傳感器晶元和用ic裸片製作的介面電路集成在一起，提高了封裝密度，減小了傳感器系統的噪聲，為採用mcm技術製作電容式加速度傳感器模塊打下了基礎。Experimental studies of the fabrication of the 8 - channel 16 - channel awg with 200ghz channel spacing are carried out. pecvd icp and lift - off technology are used for fabricating si - based sio2 awg demultiplexers. samples of the fabricated awg are tested and the experimental results are obtained
通過一系列的工藝，完成了awg晶元的製作，對awg晶元的性能進行了檢測，得到了awg器件的初步實驗結果，測試得到了awg的頻譜響應曲線，在awg器件的製作上邁出了有重要意義的一步。Microwave power sensor is the core component of microwave power meter ， and it has been researched by many domestic and overseas research institutions, but micro - structure microwave power sensor developed by using mems technology is few yet. in this paper, design and fabrication of a new chip of microbridge structure thermocouple type microwave power sensor developed by using mems technology were recommended
微波功率傳感器是微波功率計探頭中的核心元件，在該領域國內外已有大量的研究，但利用mems技術研製的微結構微波功率傳感器至今還很少，本文主要介紹了一種用mems技術研製的微梁結構熱偶微波功率傳感器晶元的設計和製作工藝。Have been several key techniques of making dif - pressure sensors such as plane technics, minuteness engine machining, static sealing etc. in the paper in the intellectualized researching field there are two ways which are examine - form, curve simulanting, to carry out dif - pressure sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of dif - pressure sensor error self compensation
論文首先討論了差壓傳感器的設計原理，並對差壓傳感器中復合敏感晶元（差壓、靜壓、溫度）和整體結構進行了設計，還解決了差壓傳感器製作中的平面工藝、微機械加工、靜電封接及真空充油等關鍵技術。And critical techniques like ka waveband solid - state circuit designing and structure machine designing are mastered. finally, our 8mm pa has an output power level of 25. 6dbm, a 11. 5 - db power gain and 13. 1 % power - added efficiency ( pae ), which meet our design requirements
其中，在毫米波功率放大技術中，著重解決了因晶元體積小而產生的設計加工難度較大的問題，突破ka波段高效固態電路設計和結構工藝設計等關鍵技術，實現了毫米波功率放大器的製作。And for analog applications by adding a normally - on nmosfet in series with the n - mosfet in an analog circuit respectively. according to spice3f5 and bert2. 0 simulation results, the substrate current of new structure cmos inverter is suppressed to about 50 % of its original value and good hot - carriers resistant behaviors are obtained without adding any extra delay
0對倒相器的模擬結果表明：新型cmos數字電路結構結構使襯底電流降低約50 ，器件的熱載流子退化效應明顯改善而不會增加電路延遲；巳該電路結構中肖特叢一級管可在nmosfet漏極亙接製作肖特基金半接觸來方便地實現，工藝簡單又無須增加晶元而積。Resonant pressure sensors are fabricated by ic process and mems technology and bonded to a stress isolating mechanical structure and sealed into an evacuated package
晶元利用半導體ic工藝和mems工藝製作，採用一種減小封裝應力的結構，完成壓力傳感器的真空密封及封裝。With the quick development of 1c industry, digital signal processor ( dsp ) has gained advance in both manufacturing process, architecture, compiler and rtos. multimedia application also greatly improve the development of dsp
隨著晶元業的飛速發展，數字信號處理器（ dsp ）無論從製造工藝、體系結構、編譯器和dsp上的實時操作系統（ rtos ）幾個方面都取得了巨大的發展。With the quick development of ic industry, digital signal processor ( dsp ) has been advanced enormously in many fields, such as manufacturing process, architecture, compiler and rtos
隨著晶元業的飛速發展，數字信號處理器（ dsp ）無論從製造工藝、體系結構、編譯器和dsp上的實時操作系統（ rtos ）幾個方面都取得了巨大的發展。分享友人