晶向 的英文怎麼說

中文拼音 [jīngxiàng]
晶向 英文
crucible
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  1. Differential thermal analysis did not reveal the ammonium perchlorate phase change from rhombic to cubic.

    差熱分析沒有測出過氯酸銨從正交晶向立方晶的相變。
  2. Iron and zinc doping can lower the transformation temperature of anatase to rutile

    鐵及鋅的摻雜會降低銳鈦晶向金紅石的轉變溫度。
  3. Crystal defect face orientation lattice

    晶體缺陷晶面晶向晶
  4. According to theoretic and experimental investigation, crystal direction has nothing to do with forming square - holes

    通過理論和實驗研究，發現即使矽片晶向不準，仍能刻蝕出方孔列陣。
  5. The processing characteristics and some material properties of silicon wafers depend on the orientation.

    矽片的工藝性質與某些材料特性均與晶向有關。
  6. However, due to the random orientation of the crystal grains, there have n ' t been satisfactory techniques in texturing the surface

    然而多晶硅太陽電池的表面各晶粒的晶向不一致，缺乏有效的絨面技術。
  7. Moreover, by adjusting the technological parameters, polycrystalline diamond films grown preferentially along the different crystal orientations can be prepared

    而且通過調節工藝參數，可制備出沿不同晶向擇優生長的多晶金剛石薄膜。
  8. In the processing of single crystal materials, it was found that the sectorial distribution of light and shade appears on the surface, which is the main factor of affecting processing surface quality. therefore starting from the crystal structure, this paper first researched on kdp crystal mechanics characteristics in different crystal plane and orientation through theoretical analysis and nano - indentation experiment, separately calculated the young ’ s modules and shear modules of kdp in different crystal plane, and systematically analyzed the change rule of young ’ s modules and rigidity along with the crystal orientation

    在單晶脆性材料的加工中，人們發現加工表面產生明暗相間的扇形分佈，這種明暗相間扇形分佈是影響加工表面質量的主要因素，因此本文從晶體的結構出發，首先對kdp晶體不同晶面、不同晶向的力學性能進行了理論分析和納米壓痕實驗研究，分別計算了kdp晶體不同晶面上彈性模量和剪切模量，並系統地分析了彈性模量和硬度隨晶向的變化規律。
  9. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  10. For films thinner than 1 m, the preferred orientation was ( 101 ) and ( 104 ) plane while the sputtering gas was ar only, and the preferred orientation was ( 003 ) plane while the sputtering gas was ar and o2 mixing. this is because of the excessive o in the licoo _ 2 film produced by the ar / o2 r. f

    當薄膜厚度在1 m左右時，以ar 、 o _ 2混合氣氛為濺射氣氛，薄膜中晶體生長的優選晶向為（ 003 ）晶面群方向;以ar氣為濺射氣氛，薄膜中晶體生長的優選晶向為（ 104 ） 、 （ 101 ）晶面群方向。
  11. What ' s more, the amount of oxygen precipitates, dislocations in silicon and the orientation of the pressed surface also influence the fracture strength. stress - strain curves were studied at room temperature. in another experiment, brittle - ductile transition ( bdt ) of ncz and cz were studied for first time

    常溫下氮硅單晶（ ncz ）及普通硅單晶（ cz ）的斷裂強度研究發現，氮的摻入提高了機械性能，並且不同氧沉澱量、位錯的存在及不同晶向對硅材料機械強度也有較大影響。
  12. The a phase can change to b phase by stretching. in the range of low temperature the higher content of b crystalline was achieved during the higher drawing ratio and the higher drawing temperature

    拉伸有利於pvdf纖維的相結晶向相結晶轉變，且拉伸倍數越高相含量越高；較低溫度區域內（ 100 ） ，溫度提高有利於相結晶向相轉變，較高溫度區域內（ 100 ） ，溫度提高對相向相轉變作用不大。
  13. Over coming lattice and orientation mismatch, direct wafer bonding allows fabricating of structures and devices which can ? get through hetero - epitaxial growth

    利用鍵合技術可以集成晶格或晶向失配的材料，製造傳統外延生長技術不能製造的結構和器件。
  14. Secondary flat - a flat that is smaller than the primary orientation flat. the position of this flat determines what type the wafer is, and also the orientation of the wafer

    第二定位邊-比主定位邊小的定位邊，它的位置決定了晶圓片的類型和晶向。
  15. Components for electronic equipment. inductive components. strip - wound cut cores of grain oriented silicon - iron alloy

    電子元件.電感元件.晶向硅鐵耦合磁迴路.一般規定
  16. There are rumors saying that wong jing didn t credit himself as the director because he was afraid that his notorious reputation would ruin the expectation of the audience as well as the box office record. . anyway, the fact now is that the real identity of the director is kept unknown to us

    說王晶是導演的人，理由是王晶向以拍攝低俗笑片為主，導演一職以他掛帥恐怕會影響票房無論如何，現在電影並無列出正式的導演是誰，只在片尾告訴我們執行導演是麥詠麟而已。
  17. Little grains nisi2with the characteristics of crystal - lattice - match with c - si, can induce p - si under laser radiation. by xrd, it becomes clear that not only higher crystallization degree has been obtained comparing to ela and mic in the same conditions, but also p - si with selective crystal orientation has been achieved under proper conditions with this method

    經xrd表徵，此方法比同條件下激光晶化法和金屬誘導法制備的多晶硅具有更高的晶化度，而且利用此方法在適當的條件下還能生長出具有優選晶向的多晶硅。
  18. Test methods for determining the orientation of a semiconductor single crystal

    半導體單晶晶向測定方法
  19. Notch - an indent on the edge of a wafer used for orientation purposes

    凹槽-晶圓片邊緣上用於晶向定位的小凹槽。
  20. Molecular dynamic simulation of crack propagating along 100, 110 and 111 orientations in sic

    晶向斷裂的分子動力學模擬
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