晶場參數 的英文怎麼說

中文拼音 [jīngchǎngshēnshǔ]
晶場參數 英文
crystal field parameter
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 參 : 參構詞成分。
  • 數 : 數副詞（屢次） frequently; repeatedly
  1. Validation of design parameters of cusp magnetic field in mono - crystal furnace

    單晶爐勾形磁場設計參數實驗驗證
  2. First, it was taken that a discuss about the effects of geometry parameters of each piezocrystal on direction parameters ( main lobe width, side lobe amplitude, elimination of grating lobes ), amplitude of ultrasonic pressure, element viberation pattern, mutual radiation among elements, efficient test regions, ability to keep accurate and near - field distance and so on. based on the direction of ultrasonic field in ulpa deduced by ourselves. in addition, on the base of integrating all kinds of factors, it was put forward that the principle and method for optimized design of geometry parameters of piezocrystals in ulpa transducer, and its design programme and interface were compiled

    首先在推導超聲相控線陣換能器聲場的指向性的基礎上，就各個晶片幾何參數對指向性指標（主瓣寬度、旁瓣幅度、消除柵瓣） 、聲壓幅值、陣元振動模式、陣元間互輻射、有效檢測區域、精確控制能力、近場長度等方面的影響進行了論述，並在綜合各方面影響的基礎上，提出了晶片幾何參數優化設計的原則和方法，編寫了設計程序和界面。
  3. The effect of different operation parameters on the molten steel flow in the mould in no. 2 steelmaking plant, wisco has been studied via the three - dimensional flow field software developed by the authors

    利用開發的三維流場計算軟體，研究了操作參數對武鋼二煉鋼板坯連鑄機結晶器內鋼液流動的影響。
  4. Finite element method ( fem ) was used to simulate thermal and vibration problems in stacked - die csp assembly. finite element models and apdl programes were built in ansys to conduct thermal, thermal - mechanical and vibration analysis. the aim of these researches were trying to find some possible reasons and trends which affect the reliability of stacked csp / bga assembly and give some useful suggestions for the packaging design

    本論文正是針對以上情況，以採用引線鍵合工藝的三維疊層csp / bga封裝（裸晶元疊裝）為研究對象，在有限元分析軟體ansys中建立相關的有限元模型，編制了相應的apdl參數化分析程序，進行了溫度場分析、熱循環加載下的snpb合金焊點疲勞分析和實裝pcb板的振動模態分析。
  5. Rapid screening test methods for thermal sensitive parameter of mos field effect transistor

    Mos場效應晶體管熱敏參數快速篩選試驗方法
  6. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  7. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  8. According to the characters of the electromagnetic brake on mei - steel mould in slab continuous casting, the application effect is gained on the dimensional calculation and the correlative measuring values

    摘要針對梅鋼結晶器的電磁製動技術特點，結合數模分析和相關現場測量參數，得到制動技術在板坯連鑄上的應用效果。
  9. The temperature field of the huge stream turbine rotor during free forging is numerically simulated with different process parameters. the purpose is to find out a set of optimum process parameters so that the temperature of the rotor center does not exceed the limit temperature of abnormal grain growth which is about 1100c

    對大型汽輪機轉子鍛造過程中的成形火次進行了溫度場的數值模擬和優化，得到了控制轉子鍛件心部溫度不超過1100的工藝參數，為實際生產解決混晶問題提供了參考數據。
  10. The results indicate : the magnetic field parameters and their distribution can satisfy the requirements of crystal growth ; the simulation results of the magnetic field parameters are found in good coincidence with testing results

    結果表明：磁場參數及其分佈均滿足晶體生長要求，磁場參數的模擬結果與實驗結果吻合較好。
  11. Yin zhang, liguo cao, youduo he, et al. flow and temperature fields in slab continuous casting molds. journal of university of science and technology beijing ( english edition ), 2000, 7 ( 2 )

    參考文獻： [ 1 ]包燕平等.板坯連鑄結晶器鋼液流場的三維數學模型.北京科技大學學報2001 ， 23 （ 2 ）
  12. Its potential and maximal application field is for semiconductor films and optic films that mainly rely on the high - orientation and single crystal diamond films and big area transparent diamond films. but it is widely existent for defects in the process of diamond films growth and also it is difficult to get parameters stability such as temperature etc in wide area, as a result, the diamond films " orientation is changed, and it is very difficult to get the high - orientation and single crystal diamond films and big area transparent diamond films

    金剛石膜潛在的最大應用領域是作為半導體薄膜和光學薄膜，而這個領域的開發在很大程度上依賴于高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得，但由於金剛石膜生長過程中缺陷的普遍存在以及大面積范圍內均勻溫度場等參數的難以獲取，從而導致金剛石膜的取向發生改變，使高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得十分困難。
  13. The suitable temperature field, growth rate of the crystals and rotation rate were decided by a mount of experiment and theory analysis

    通過大量實驗並結合理論分析，設計了合適的溫場，適宜的提拉速度和旋轉速度等晶體生長的工藝參數。
  14. In the background of actual power - parameter measurement task, this paper adopts advanced energy chip technology and does some researches about power - parameter remote watching and control system based on lonworks field - bus technology. a power remote terminal unit ( rtu ) eu2502 is developed and realized the detecting of power - parameter based on lon network

    本文正是在這種趨勢下，以一個電力參數測量實際課題為背景，採用先進的電能計量晶元技術，進行基於lonworks現場總線技術的電力參數遠程監控系統研究，研製出電力遠動裝置（ rtu ， remoteterminalunit ） eu2502 ，實現基於lon網的電力參數檢測。
  15. The design parameters of cusp magnetic field in 8 - inch mono - crystal furnace ( 16 - inch crucible ) are obtained via the simulation method, and the validation check is made of the simulation results of parameters of magnetic field

    摘要通過模擬方法得到8英寸單晶爐（ 16英寸坩堝）勾形磁場的設計參數，並對磁場參數的模擬結果進行了實驗驗證。
  16. Under the mean field assumption, the surface energy related to the orientation of directors, order parameters, anchoring field strengths hb, hc is derived

    導出在此平均場作用下雙軸向列相液晶錶面能與指向矢、序參數以及h _ b 、 h _ c有關的一般公式。
  17. When the appropriate thermal field designed and the proper growth parameters suited to the thermal field given, several ce : yap single crystals roughs were grown

    通過設計合適的溫場、以及調節好與溫場相匹配的生長工藝參數，生長出了多根ce : yap單晶毛坯。
分享友人
分享到 Line

分享到臉書