晶帶結構 的英文怎麼說

中文拼音 [jīngdàijiēgòu]
晶帶結構 英文
zone configuration
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 結動詞(長出果實或種子) bear (fruit); form (seed)
  • : Ⅰ動詞1 (構造; 組合) construct; form; compose 2 (結成) fabricate; make up 3 (建造; 架屋) bui...
  • 結構 : 1 (各組成部分的搭配形式) structure; composition; construction; formation; constitution; fabric;...
  1. In this thesis, a new finite difference time domain ( fdtd ) method is developed to treat a two - dimensional photonic crystal consisting of nearly - free - electron metals. the method is used to calculate the band structures and investigate defect modes and guide modes in such a photonic crystal

    本論文首先發展了一種基於等離子模型的有限差分計算方法,並應用於二維金屬光子體,有效地計算了該類光子體的能
  2. Calculation of the band structures in two - dimensional phononic crystals consisting of elliptic cylinders

    二維橢圓柱散射體聲子的計算
  3. By choosing non - hybrid dictionary, blocking artifacts of dct system can be avoided ultimately. the cost of coding motion information is reduced, so the visual quality of images at low bit - rates is improved. 4

    而且,通過選擇非的字典(原子函數之間允許重疊) ,從根本上避免了低速率dct系統來的方塊邊緣失真,增加估計的精度,減少對運動信息編碼耗費並提高在低速率下的視覺效果。
  4. In this paper, researches based on one - - dimen - sional photonic cystal and its app1ications are developed. in theory, the finite - - difference time - - domain ( fdtd ) method is re - searched

    在理論工作中,研究了時域有限差分法理論,利用時域有限差分法建立了研究一維光子體能的模型。
  5. A patch antenna with etched holes on the ground plane is also studied. the performance of the antenna at the resonant frequency is analyzed by using the fdtd method together with the pml boundary treatment. the results show that the surface waves are suppressed greatly, the bandwidth is improved and a 1 odb reduction on the sidelobe level is achieved at the 110 and 260 directions in the e plane

    全面地研究了地面腐蝕周期圓孔的電磁體貼片天線在基波頻率處的性能,用fdtd方法並合pml邊界處理技術對該天線所取得的研究果顯示,本文設計的地面腐蝕型電磁抑制了貼片天線中的表面波,增加了天線的寬,並有效地削弱了旁瓣,使天線的e面方向圖上110和260方向的兩個旁瓣被削弱了10db 。
  6. After some band structure analysis with the fast method, some interesting results are found for a 2d photonic crystal formed by a rectangular lattice of dielectric material gaas ( e = 11. 4 ) and air

    對一種長方的光子體,通過反復調節介質柱的長、寬和格的長、寬,得到該最大絕對禁寬度= 0 。
  7. Experimentally, an interesting six - route ndr characteristic, resulting from the form of split miniband structures and the extension of high - field domain in the superlattice, is observed at room temperature

    實驗的果顯示,由於此分?迷你及超中高場區域的擴展,于常溫下可觀察出?道軌跡之多重負微分電阻特性。
  8. For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias

    為獲得?多軌跡的負微分電阻,本研究組件使用?相當薄之砷化銦鎵?子井,可使四周期磷化銦/砷化銦鎵超在平情況下形成三個分?的?子化能階,且於足夠大的操作偏壓下在該超中形成?高場區域。
  9. Effect of structure and defect on photonic band gap of 2d photonic crystal

    二維光子和缺陷對光子禁的影響
  10. 2. on the degeneracy properties in the dispersion relation of photonic crystal it is an intractable problem to explain the dispersion relation and degeneracy properties in it for photonic crystals

    光子體色散關系中簡並的理論研究對于光子體的頻和頻中的簡並一直是一個備受關注的問題。
  11. Due to special crystal structure and energy level structure, tatanlate have high photocatalytic activity for water splitting

    摘要鉭酸鹽光解水催化劑,因其特殊的和能而具有高的光解水活性。
  12. After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate

    運用密度泛函理論計算,建立純砷化鍺鎘體的模型並對之進行優化,使理論模型更加接近真實,從而研究純砷化鍺鎘體的能和態密度、光學性質;分別建立砷空位模型( vas - cdgeas2 ) ,鍺占砷位模型( ge / as - cdgeas2 ) ,分別計算它們的能、態密度、光學性質。
  13. Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties

    氧化鋅( zno )是一種具有六方纖鋅礦的寬禁ii - vi族半導體材料,由於其優良的特性,在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。
  14. Topics covered include crystal structure and band theory, density functional theory, a survey of properties of metals and semiconductors, quantum hall effect, phonons, electron phonon interaction and superconductivity

    內容包括了和能理論,密度泛函理論,金屬和半導體特性概論,量子霍爾效應,聲子,電子-聲子的相互作用以及超導電性。
  15. Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance

    金剛石的特殊使其成為一種性能優異的功能材料,它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高,廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。
  16. By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism, the structure of the energy band and the crystal potential field

    本文充分利用半導體的能理論,從薄膜、能體勢場的角度,分析載流子的遷移、散射以及載流子的產生和缺陷對載流子的捕獲。
  17. Zno is a - semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties

    氧化鋅( zno )是一種具有六方纖鋅礦的寬禁-族半導體材料,由於其優良的物理特性, zno薄膜在太陽能電池、紫外探測器、發光顯示器件、聲表面波器件、氣敏傳感器等方面得到了廣泛的應用。
  18. Topics covered include : crystal lattices, electronic energy band structures, phonon dispersion relatons, effective mass theorem, semiclassical equations of motion, and impurity states in semiconductors, band structure and transport properties of selected semiconductors, and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling

    被覆蓋的論題包括:格、電子能、聲子色散關系、有效質量理論、半經典運動方程和半導體中的非純態、選擇性半導體的和輸運性質固體量子理論與準費米能級以及用於器件建模的玻爾茲曼輸運理論之間的聯系。
  19. Nanoscale semiconductor metal selenides and tellurides have attracted substantial research interests during the past years. it has been demonstrated that the optical, electrical and magnetic properties of them could be tailored in a controllable way by altering their structure, morphology, dimension, or composition

    如何在合成過程中實現對它們的、維度、形貌、表面和能的調控,將為實現材料性能的人工剪裁,深入系統研究材料與性能的關系具有重要的意義。
  20. Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation. the influence of the thickness on the crystal structure, electrical resistivity, carrier concentration, absorption coefficient and energy gap of fes2 thin films have been investigated

    採用硫化不同厚度的fe膜制備了不同厚度的fes2薄膜的方法,研究了不同厚度fes2薄膜的、電阻率、載流子濃度、光吸收系數以及禁寬度。
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