晶帶線 的英文怎麼說

中文拼音 [jīngdàixiàn]
晶帶線 英文
zone line
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 線 : 名詞1 （用絲、棉、金屬等製成的細長的東西） thread; string; wire 2 [數學] （一個點任意移動所構成的...
  1. Delay line oscillator is composed of broadband amprifer adjustable attenuator and saw sensor device. after output signal of delay line oscillator is smoothed, it mixes with 109mhz local oscillation signal. its differential frequency signal is smoothed by low - pass filter trimmed by shaping circuit and processed by digital processing circuit

    延遲線振蕩器由寬帶放大器、可調衰減器和聲表面波質量傳感器件構成。延遲線振蕩器輸出信號經濾波后與109mhz的本機晶體振蕩器輸出信號相混頻，通過低通濾波取其差頻，並經整形後由數字信號處理電路處理。
  2. However, in the area with strong magma mingling, there are widespread abnormal fabrics, distinguished differences in the idiomophic - textures and the peritectic reaction, poililitic texture, metasomatism among the minerals, metasomatic border, embayment, rimmed structure, abnormal plagioclase zoning, relict fabric as well as the acicular apatite are very common

    巖石的異常結構構造十分發育，礦物之間自形程度差異顯著，常見包晶反應、包含結構、交代邊、熔蝕邊、交代蠶食的港灣狀結構構造及交代縫合線、礦物鑲邊、斜長石異常環帶和礦物殘留等，多見指示巖漿混合的標志性礦物針狀磷灰石。
  3. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  4. Divided into two, three, four, five series, uses superelevation brightness led to coordinate with the plastic linear manufactured with the pvc material decorating lamps and lanterns, is one kind of new illumination photosource which emerges in the last few years, belongs to the cold photosource, through the chip control, may realize changes gradually, the jump, the color glitters, stochastically glitters, changes gradually, pursues, the scanning in turn and so on the mobile color change

    Led燈飾產品應用實例柔性光帶系列：分為二線三線四線五線系列，採用超高亮度led配合pvc材料製造的可塑性線型裝飾燈具，是近幾年來興起的一種新型照明光源，屬于冷光源的一種，通過晶元控制，可實現漸變跳變色彩閃爍隨機閃爍漸變交替追逐掃描等流動顏色變化。
  5. Due to the hardware characteristic ' s limitation, such as the poor speed of a / d, d / a conversion and dsp process, the most part of sr system adopt middle course. that is to say, by using the special digital converter or running relevant arithmetic, it converts the radio signal to intermediate frequency signal and completes the base - band signal process that is n ' t the veriest sr and is named " software defined radio ( sdr ) "

    由於受到硬體性能如a d 、 d a及dsp晶元處理速度的限制，目前的軟體無線電系統多採用折中的實現方案，增加專用的數字變頻器或者運行數字變頻演算法，將射頻信號變頻到中頻，然後再進行基帶信號處理，這樣的軟體無線電系統又被稱之為「軟體定義無線電」 ，它並不是真正意義上的軟體無線電。
  6. Yiwu unique bags cases co., ltd is a leading supplier of leather bags, pvc bags, cosmetic bags and shopping bags in china, which was founded in 1995. it lies in yiwu, the famous small commodities city of asia

    本公司專業產品有銀包時裝包化妝手袋水晶袋及來樣定貨洽談。本公司是化妝品飾品線帶針織等系列產品的配套生產廠家。
  7. These other boards can ben cpu boards or peripheral boards providing various functions. the vmebus standard originated with the motorola versabus in 1979 which was designed using the then new mc68000 microprocessor

    系統總線吞吐率的優化：其他的晶元組對pci到內存帶寬只能到70mbs ， powerplusii則能達到80mbs而無須消耗額外的cpu資源。
  8. Vmebus boards have data bus sizes of 16, 32, or 64 bits and are designed to be plugged into a backplane that has up to 21 slots for other boards. these other boards can ben cpu boards or peripheral boards providing various functions. the vmebus standard originated with the motorola versabus in 1979 which was designed using the then new mc68000 microprocessor

    性能的提高主要是由於三個方面的改進： 1 .處理器及高速緩存性能的優化2 .降低內存瓶頸：通過對powerplus體系結構的改進，使內存性能提高到582mb s memory read bandwidth和640mb s burst write bandwidth 3 .系統總線吞吐率的優化：其他的晶元組對pci到內存帶寬只能到70mb s ， powerplus ii則能達到80mb s而無須消耗額外的cpu資源。
  9. The analysis results show that both the nanowires without wrapping layers and the center thinner nanowires of the coaxial nanocable with wrapping layers are cubic structure p - sic single crystalline, whereas the outside wrapping layer of the coaxial nanocable is an amorphous sio2

    結果分析表明：不帶包覆層和帶有包覆層的芯部的納米線均為立方結構- sic單晶，而外包覆層為非晶sio _ 2 。
  10. A patch antenna with etched holes on the ground plane is also studied. the performance of the antenna at the resonant frequency is analyzed by using the fdtd method together with the pml boundary treatment. the results show that the surface waves are suppressed greatly, the bandwidth is improved and a 1 odb reduction on the sidelobe level is achieved at the 110 and 260 directions in the e plane

    全面地研究了地面腐蝕周期圓孔結構的電磁晶體貼片天線在基波頻率處的性能，用fdtd方法並結合pml邊界處理技術對該天線所取得的研究結果顯示，本文設計的地面腐蝕型電磁晶體結構抑制了貼片天線中的表面波，增加了天線的帶寬，並有效地削弱了旁瓣，使天線的e面方向圖上110和260方向的兩個旁瓣被削弱了10db 。
  11. Ct mri medical image system in pursuit of high - resolution, high - brightness and high - contrast has always brought new technical demands for medical display field. based on the accumulated top techniques and abundant experience, and the opinions and requirements gained from doctors working in the first line, bigtide has developed more convenient high - precision professional lcd for ct mri, which can be used to be responsible for the medical field that allows no performance compromise

    追求高解析度高亮度高對比度的ct mri醫療影像系統總是一次次為醫學顯示領域帶來新的技術要求， bigtide憑借多年積累的尖端技術和豐富經驗，並廣泛聽取了醫療第一線醫生的意見與要求，開發出了操作更容易的ct mri用高精度專業液晶顯示器，來應對不能有絲毫性能妥協的醫療現場。
  12. In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology

    為使二維振動傳感器在兩主軸方向的靈敏度大致相同，敏感元件採用高度對稱的四梁結構，其中每個軸向上均採用帶折疊梁的雙側叉指電容結構，採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件，具有高靈敏度、寬量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算，並利用有限元法進行了模擬分析，根據模擬結果得出了優化參數;在確定敏感結構的基礎上，研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析，利用差動測量技術得到由振動引起的微小電容變化量，經c - v介面電路進行相位調制處理，然後通過解調輸出與加速度成正比的電壓信號。
  13. Figure 7 shows the sequence for tape bonding the chip and assembling the package.

    圖7所示為帶狀引線連接晶元和管殼裝配的工藝程序。
  14. A patch antenna with air holes in the substrate has been designed. the finite - difference time - domain ( fdtd ) method together with the perfectly matched layer ( pml ) boundary treatment has been used to study the performance of the antenna. it is shown that the surface waves are significiently suppressed, the frequency bandwidth is improved, the sidelobe levels are reduced and consequently the gain in the forward direction is improved by 14 db ( about 4 db higher than the value reported previously )

    設計了一種基底鉆周期圓孔結構的電磁（光子）晶體貼片天線，用fdtd方法並結合pml吸收邊界條件對該天線進行了研究，結果表明本文所設計的基底鉆孔型電磁晶體貼片天線取得了多方面的性能改善，與普通天線相比，基底中的表面波受到很大抑制，天線的帶寬增加，遠場方向圖上天線的旁瓣和背瓣被明顯削弱，向前輻射的增益由原來的12db增加到26db ，增加了14db ，比文獻上報道的gonzalo等人的研究結果提高了4db 。
  15. Bringing into play the communication market resources in hangzhou bay, the park devotes itself to the formation of a “ mobile valley ”, which means a unique zhejiang - flavored economic pattern : forming a complete telecommunication industry chain from software and operation development of key parts, such as ic chip, rf modules, base band, display, high capacity battery, to related components like cell phone housing, keypad, antenna, vibration motor, mould, pcb ( circuit board ), photoelectricity device, electronic device, connectors and system and software development, and operation service development

    園區依託杭州灣通信市場資源，致力打造「移動谷」 ，創造中國浙江經濟特有的專業版塊模式：從集成電路晶元、 rf組件、基帶、顯示器、高能電池等核心器件到接手機外殼和按鍵、天線、振動馬達、模具、 pcb （電路板） 、光電器件、電子器件、連接件等相關組件及系統和軟體開發、運營服務開發，形成完整的通信產業鏈。
  16. As a direct wide - band - gap ii - vi semiconductor, znse single crystal has been identified as an important contender for the fabrication of blue - green light - diodes, nonlinear optic - electronic components and infrared devices

    Znse作為最重要的寬禁帶-族半導體，其單晶在蘭綠光發射器件、非線性光電器件和紅外器件方面有著廣泛的應用。
  17. For the detector design, mems surface micromachining techniques were incorporated tofabricate a simple micro polysilicon air - bridge heater filament with integrated polysilicon electrodes

    有關這個檢測器的設計，是將mems表面微切削加工技術與帶有集成的多晶硅電極的簡單微多晶硅空運線加熱絲的製作結合在一起。
  18. Liquid crystal device ( lcd ) has attracted more interest due to flatness portability, lower power consumption and eyesight protection. the share of lcd in the international display field will close to that of crt and keep increasing tendency

    液晶顯示器以其平板性、攜帶方便、功耗低、視力保健的優點越來越受青睞，已能與陰極射線管顯示器平分國際市場，並正在已繼續上升的勢頭發展。
  19. Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x

    採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。
  20. According to process rules of the gaas mmic product line, we properly designed the circuit layout. in order to reduce the overall chip size, the transmission lines are folded with sufficient spacing to avoid interline coupling. the lange couplers are also folded to keep the 90 and 180 bits " sizes similar to other phase shift bits " sizes

    結合實際mmic工藝線，合理設計移相器電路版圖，折疊微帶線並留出足夠大的線間距，以避免線間寄生耦合的發生，並折疊蘭格耦合器使90和180移相位的尺寸與其它相位的晶元尺寸保持一致。
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