晶核密度 的英文怎麼說
中文拼音 [jīnghémìdù]
晶核密度
英文
density of nuclei-
By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability
然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。The key stage of fabricating gene chip is pretreatment of glass surface including the processes of nh3h2o treatment, aminosilane treatment and aldehyde treatment. the pretreatment can grow active group that can bind probe effectively on the surface of glass slide. as a result, the actively treated glass slide can suit for fabricating in - situ synthesis high density gene chips
基因晶元制備技術的關鍵步驟是玻片表面預處理，即對玻片表面進行羥基化、氨基化和醛基化處理，使表面生長的活性基團能有效固定寡核苷酸探針，以滿足原位合成高密度基因晶元對玻片的要求。By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。The paper works out the ice crystal spectrum distributing in the different macroscopic and micro - backgroud of the cloud ( ie, the thickness, the temperature and the supersaturation with respect to ice of the nucleation layer ). this paper also works out the amount of catalyst which is allowed in the cloud nucleation layer according to the different quantity of the supercooled water, the density of the supersaturation of the vapor with respect to ice. simultaneously, the paper discusses the i nfluence of remaining time when seeding artificial ice nucleus in the different ascending - velocity and altitude, and elicits the proper seeding altitude of the catalyst
以此解為依據，得出了不同均流時，人工引入冰核在核化層存留時間，再以此時間作為人工冰核凝華增長時間，求出不同的雲宏微觀背景（如核化層厚度、溫度、冰面過飽和度等）下的冰晶譜分佈，經和實際資料比對符合相當好。進而求出核化層中不同過冷水量、冰面過飽和水汽密度下雲核化層可允許的催化用量。同時討論了不同升速，不同高度引入人工冰核時對其存留時間的影響。The main contents to be studied and solved are shown as follows : designing scheme of the error compensation system, studying and designing the signal conditioning circuit, designing the data - acquisition circuit, designing and realizing the max1457 software development system. the compensating circuit is designed in virtue of the signal conditioning chip max1457 as its core. the data - acquisition circuit is designed in virtue
硬體方面，根據總體方案設計了以信號調理晶元max1457為核心的補償電路;以max1401為核心的數據採集電路，用來採集傳感器的電橋電壓和max1457輸出電壓;設計了max1457電源電路， max1457的電源電壓是失調dac和靈敏度dac的參考電壓，採用了ad586給max1457提供精密5v電源電壓。Gene chips is high density probe array which is composed of nucleic acid or nucleic acid band arranged on the solid support media according to the definite order. it can detect unknown molecule by nucleic acid hybridize principle
基因晶元是將核酸或核酸片段按照一定的順序排列在固相支持物上構成高密度探針陣列，利用核酸雜交原理檢測未知分子。With plating time going on, the nano - polycrystal gathering grows in two dimensions, and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface. because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel, the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated, and then their size is smaller. the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content, the microstructure of coating turns from nano - crystalline to the amorphous
隨著施鍍時間的延長，納米晶聚晶體在橫向二維生長的同時，在納米晶聚晶體的表面上也進行著三維方向的新的一層聚晶體的生長；在調質態45鋼表面，由於其具有比較高的晶界和缺陷密度，因此在沉積初期，納米晶聚晶體的成核密度也較大，從而在二維方向聚晶體的尺度較小，鍍層沉積初期表現為緻密細小的鱗片狀組織。On the surface of annealed 45 steel, as the pearlite in it contains cementite phase and has high crystal boundary density, the nucleation and growth of deposits prefer to occur at the pearlite at the beginning during depositioa the coating exists in form of nano - polycrystal layers composed by gathering of nano - sized crystals
在退火態45鋼表面，由於珠光體組織中含有滲碳體相且具有比較高的晶界密度，因而在沉積初期鍍層優先在此處形核和生長；鍍層在基體表面是以納米尺度的晶粒聚集在一起形成的聚晶體形式存在的。A design ot portable digital oscillograph based on dsp is presented. a integrated prototype is composed of high speed data processing module by which signal is digitalized, data processing unit whose core is dsp, general controller as which cpld is used and terminal facility - - lcd
通過高速數據採集模塊將信號數字化，以高性能數字信號處理器tms320vc5402為核心構成數據處理單元，採用高密度的可編程邏輯器件epf6016a設計儀器的系統控制單元，使用液晶顯示器做為終端顯示設備，構成一個完整的示波表樣機。We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation
在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。By analyzing of the potentiostatic transients, the diffusion coefficient d of the depositing nickel ions and saturated nucleus number density nsat were estimated, the effects of applied potential on nucleation and growth ware also discussed
通過分析恆電位暫態曲線，求出鎳離子的擴散系數d ，以及不同外加電位下的飽和晶核數密度n _ （ sat ） ，探討了外加電位對成核作用的影響。分享友人