晶格位移 的英文怎麼說
中文拼音 [jīnggéwèiyí]
晶格位移
英文
lattice displacement-
Treating the anharmonic terms of potential energy as perturbations, and employing the formulas for atomic displacements and hamiltonian in phonon occupation number representation, the formulas for thermal expansion coefficients of crystal nano - wires are derived and the numerical calculations are carried out in this paper
摘要將原子間相互作用勢的非諧項作為微擾，運用聲子數表象中的晶格原子振動位移和晶格振動哈密頓公式，推導了納米晶體線的熱膨脹系數公式，並進行了數值計算。The probability of obtaining a lattice atom displacement via the phonon kick process is evidently small.
很明顯，通過聲子反沖過程而取得晶格原子位移的幾率是不大的。The diffusion mechanism wherein net atomic migration is from lattice site to an adjacent vacancy
一種擴散機制，這時候原子的凈遷移過程是從晶格結點位置移動到鄰近的空位中。We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing
所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band
另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。Psl occurs while eu2 + transferring from 4fb5d7 to 4f7 or when exciton transferring to 4f7 defectively. we give the physical imagination about several possible migration paths of f center, which offer more full and accurate theory basis to comprehend the cause of psl phenomenon in bafbr : eu2 + crystal
我們詳細給出了在bafbr ： eu ~ （ 2 + ）晶格中不同位置f心可能移動路徑的物理圖景，從而為更好的理解bafbr ： eu ~ （ 2 + ）晶格中psl現象的產生提供了更加翔實的理論依據。According to process rules of the gaas mmic product line, we properly designed the circuit layout. in order to reduce the overall chip size, the transmission lines are folded with sufficient spacing to avoid interline coupling. the lange couplers are also folded to keep the 90 and 180 bits " sizes similar to other phase shift bits " sizes
結合實際mmic工藝線，合理設計移相器電路版圖，折疊微帶線並留出足夠大的線間距，以避免線間寄生耦合的發生，並折疊蘭格耦合器使90和180移相位的尺寸與其它相位的晶元尺寸保持一致。分享友人