晶格摻雜 的英文怎麼說

中文拼音 [jīnggéchānzá]
晶格摻雜 英文
impurity
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  2. Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations

    超晶格的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩，振蕩產生的條件依賴于其結構參數，摻雜濃度和外加偏壓的大小。
  3. It is shown that with increasing doped value x, structures of the crystals change its low symmetry into high symmetry and doping with praseodymium can induce larger crystal structure distortion than other elements

    發現塊材樣品隨摻雜量x增加，晶體結構由低對稱向高對稱性轉變。通過摻雜pr元素可以引起晶格較大畸變。
  4. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  5. The difference between the magnetic moments for the samples with respective doping level can be ascribed to the variation of the competition between thermal effect and the magnetic coupling. based on the spin orientation rotation of dy sublattice as well as the antiferomagnetic coupling between dy sublattice and mn sublattice, we successfully elucidate the changes of magnetic structure in perovskite compounds s. electron spin resonance ( esr ) study on perovskite compounds on the basis of chapter 4, we give further study on micromagneticism of dy - doping perovskite compounds la0. 67 - xdyxsr0. 33mno3

    其中第一節簡單回顧了早期對a位雙稀土元素元素摻雜鈣鈦礦化合物的研究，早期研究較多的是替代元素的離子半徑變化上，由於替代離子半徑的改變，使a位平均半徑變ylll化，致使公差因子改變，使mn o長、鍵角變化，晶格效應的作用使化合物的磁性、電性、 cmr效應發生改變。
  6. Pure cdte films have high electrical resistivity and are slightly p - type, due to the formation of cd vacancies in the cdte lattice acting as acceptor centers. the sheet resistivity of films are about 1010 ? / ?. the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v. s. the structural and electrical properties of cdte films doped te are markedly different from pure cdte films

    ，面載流子濃度約105 - 6 / cm2 ，載流子遷移率為幾百cm2 / v . s ；摻雜te元素后，薄膜衍射峰強增大，薄膜結構上出現了第二種相成分?六方結構的te ，由衍射峰強判斷該相比例較小，同時cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常數增大。
  7. After bamgal10o17 doped with sr, ca, the cell volume of each doped phosphors is shrunk and the crystal parameter c is decreased

    摻雜少量的sr ， ca后，所得的熒光粉的晶格參數c變小，晶胞體積也隨之變小。
  8. The lattice constants were refined using celref program. when implanted c / fe ions ratio is 0. 5 %, the p lattice is expanded, though c atom is much smaller han si. this is probably due to the solid solution in interstitial state

    單胞的間隙位置，形成間隙型固溶體，使晶格膨脹；當摻雜的碳離子含量增加到一定的程度時，趨向于形成置換固溶體，因為碳和硅屬同族元素價態相同，所以碳會置換p 。
  9. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  10. When the applied bias voltage is changed within positive slope regions of u - i curve, the domain boundary between the high and low electric field domains does not moved, and the size of electric field domains regions is also not altered, while the electric field strengths are adjusted

    用模擬計算的方法研究了弱耦合摻雜gaaa / alas超晶格在時變電壓下的場疇機制和固定偏壓下電流自維持振蕩。在時變電壓下，一定摻雜的超晶格處于穩定的電場疇， u - i曲線呈現鋸齒狀波形。
  11. The electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. we have optimized the simulation using matlab software. comparing the processing data, we know that various ode commands solve problems with different difficulties

    本論文主要內容包括以下幾個方面：運用matlab軟體進行模擬計算的演算法優化，從比較摻雜弱耦合gaas / alas超晶格模擬計算的過程數據可得，不同的ode命令可求解問題的難度是不同的：針對較低難度問題，即研究固定偏壓下超晶格縱向輸運的求解問題（ du / dt = 0 ） ，一般首選ode45 。
  12. Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data

    由超晶格中子能級之間的順序多阱共振隧穿引起的電場疇及電流自維持振蕩現象是其中的一個非常有意義的分支，該現象可用來製作電壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定偏壓下電流自維持振蕩產生的條件進行了深入的探討，並結合宏觀模型和微觀模型對超晶格在時變電壓作用下的電壓-電流特性以及固定偏壓作用下的電流特性進行了模擬計算。
  13. As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped

    眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
  14. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
  15. For problems of vertical transport in the superlattice at fixed d. c. bias voltage, ode45 is optional. for problems of vertical transport in the superlattice with the increasing bias voltage and the relatively higher doped densities, ode15s is optional

    針對較高難度問題，即研究偏壓從零線性上升而且摻雜參數v較大時的超晶格縱向輸運問題（ du / dt （ 0 ） ，一般首選ode15s 。
  16. For the zno : eu obtained in the present paper, eu3 + ions have successfully inserted into zno host lattices with two different structure phases

    首次成功地將eu離子摻雜到基質zno的不同晶相之中。並對不同格位的發射現象進行了研究。
  17. The effects of reactive conditions on the products were discussed and the proper conditions are determined. we primarily synthesize a series of ba1 - xsrxti1 - ysnyo3 solid solutions nanopowder by low - temperature / low - pressure hydrothermal method under the condition of 150, 0. 5mpa

    採用低溫一低壓水熱合成法，在150 ， o . smpa以下合成了一系列bal一xsrxtil一ysnyo3固溶體納米粉末，由於摻雜離子均勻進入母體晶格以及材料的結晶更完整，使得介電性能明顯改善，不僅t 。
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