晶格間距 的英文怎麼說

中文拼音 [jīnggéjiānjù]
晶格間距 英文
crystal lattice spacing
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 距 : Ⅰ名詞1 （距離） distance 2 （雄雞、雉等的腿的後面突出像腳趾的部分） spur （of a cock etc ）Ⅱ動詞...
  • 間距 : interval; separation; spacing; espacement; space; spacing; space length; range; unpack; step
  1. The crystalline structure changes of pp induced by pan - milling were characterized by x - ray diffraction and raman spectroscopy. xrd analyses show that when pp was co - milled with uhmwpe, crystal transformation of pp occurred, its crystallinity and crystallite size decreased, whereas, only slight reduction of crystallinity and crystallite size were observed and no crystal transformation was found when pp was co - milled with wtr chips, and amorphization of pp was strongly enhanced by co - milling pp with iron

    採用x -射線衍射研究了聚丙烯碾磨粉碎過程微觀結構變化， uhmwpe存在下pp發生晶型轉變、結晶度降低和晶粒尺寸減小；彈性材料wtr抑制pp塑性變形，碾磨導致分子堆積有序區域膨脹，晶面間距增大，結晶度下降；剛性材料金屬鐵與pp產生強烈摩擦，加快晶粒細化，晶格破裂導致非晶化。
  2. But in the moderate electric field 150 kv / cm, there is a sharp change in the configuration and charge distribution of the exciton, i. e. the exciton is directly split into an electron polaron and a hole polaron. the polarization and dissociation happen at a same time, which differs from that in conjugated polymers. and in the strong electric field 350 kv / cm, appear structural phase transition of the chain and luminescence quenching

    同時得到兩個重要的臨界電場值： 1激子解離電場ec1 （ 150kv / cm ） ，在此電場下激子發生瞬間解離，成為電子型極化子和空穴型極化子； 2結構相變電場ec2 （ 350kv / cm ） ，在ec2下二聚化晶格開始被等距晶格取代， ptcl絡合物鏈發生結構相變，並伴隨peierls能隙漸趨消失和發光猝滅的現象出現。
  3. According to process rules of the gaas mmic product line, we properly designed the circuit layout. in order to reduce the overall chip size, the transmission lines are folded with sufficient spacing to avoid interline coupling. the lange couplers are also folded to keep the 90 and 180 bits " sizes similar to other phase shift bits " sizes

    結合實際mmic工藝線，合理設計移相器電路版圖，折疊微帶線並留出足夠大的線間距，以避免線間寄生耦合的發生，並折疊蘭格耦合器使90和180移相位的尺寸與其它相位的晶元尺寸保持一致。
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