晶片除氣 的英文怎麼說

中文拼音 [jīngpiānchúqì]
晶片除氣 英文
wafer process control system
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 片 : 片構詞成分。
  • 除 : Ⅰ動詞1 （去掉） get rid of; eliminate; remove 2 [數學] （用一個數把另一個數分成若干等份） divide:...
  • 氣 : Ⅰ名詞1 （氣體） gas 2 （空氣） air 3 （氣息） breath 4 （自然界冷熱陰晴等現象） weather 5 （氣味...
  • 晶片 : chip; crystal plate; wafer
  1. Besides acting as agent of huzhou zhanwang pharmaceutical co., ltd. for a variety of adjuvant, we are also the agent for many imported adjuvant, such as new zealand wyndales lactose ; germany basfs vitamins and direct compression excipients ; france roquettes polyatomic alcohol ; germany sasols polyglycol ; switzerland givandans powdery flavoring essence ; usa cabots gas silica ; italy randi groups tartaric products ; uk crodas tween and span ; japan asahikaseis microcrystalline cellulose ; usa noveons carbopol resin, etc

    我公司除代理湖州展望化學藥業有限公司各種輔料，同時代理多家進口輔料，諸如：紐西蘭乳糖系列產品、德國巴斯夫公司維生素系列產品及直接壓片輔料；法國羅蓋特多元醇系列產品；德國沙索公司聚乙二醇系列產品；瑞士奇華頓粉末系列香精；美國卡博特公司氣相法二氧化硅；義大利拉第集團天然酒石酸系列產品；英國禾大公司吐溫，司盤系列；日本旭化成公司微晶纖維素系列產品；美國諾譽公司卡伯波樹脂系列等。
  2. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  3. However, te - rich phases and point defects with high concentration were found locally. not only the vapor - solid equilibrium but also the vapor - liquid - solid equilibrium should be considered for the annealing of the crystals with te - rich phases. by analyzing the phase diagrams of cd - te and p - t plot of cd1 - xznxte ( x = 0. 04 ), it was concluded that for the purpose of rem

    本文通過仔細分析cd . te二元相圖和cd卜龍znxte （ x = 0 . 04 ）的p一t相圖，認為為了去除富te相，獲得穩定的電學性能，退火時晶片溫度應小於115ok ，氣氛環境的總壓力應小於pcs （對cdte ， pc洶
  4. Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective

    半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。
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