晶界位錯 的英文怎麼說

中文拼音 [jīngjièwèicuò]
晶界位錯 英文
boundary dislocations
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 錯 : Ⅰ形容詞1 （錯誤; 不正確） wrong; mistaken; erroneous 2 （用於否定: 壞; 差） bad; poor 3 （交叉; ...
  1. Z. zhang and w. geng, " direct observation of misfit dislocations at the interface between a decagonal quasicrystal and its epitaxial crystalline layers ", phil. mag. lett., 65 ( 1992 ) 211 - 218

    「十面體準晶與其表面晶體之間界面失配位錯的直接觀察」 ， ， （英國）
  2. This etchant can show different defects, such as dislocations, grain boundaries, twins, te - rich inclusions and precipitates etc., on different planes

    這種腐蝕劑能顯示不同晶面上的多種缺陷，如位錯、晶界、富te相等。
  3. All main ways of metal strengthening including grain refining strengthening, dislocation strengthening, grain boundary and substructure strengthening, second phase strengthening, solid solution strengthening, as well as trip strengthening and so on, have totally found expression in the adi

    金屬強化的幾種主要方式：細晶強化，位錯強化，晶界與亞結構強化，第二相強化，固溶強化，細晶強化以及trip強化等都在等溫淬火球鐵中得到了體現。
  4. Presents the microstructure evolution in aluminum a nd copper after deformation by cold rolling in the strain range of 10 to 50 % red uction using tem and points out three types of dislocation structures are typica l and two of them are common for both materials and these two common types are f ound in non - cube grains and can be distinguished by crystallographic orientatio n of dislocation boundaries in the grains and the third type of structure is obs erved in cube grains, and concludes that grain orientation is important in deter mining the structure type but some other metallurgical parameters also have a ro le to play

    採用tem對冷軋多晶銅與多晶鋁的形變顯微組織演變進行了對比研究.結果發現：多晶銅及多晶鋁形變顯微組織中均含有三類典型的位錯結構類型，其中的兩種結構特徵在兩種材料中是相似的，這兩種類型結構存在於非立方取向晶粒，可通過晶粒中位錯邊界的晶體學取向加以區別，另一類型結構存在於立方取向晶粒；晶粒的晶體學取向決定了其形變顯微組織類型，但其它冶金學因素對顯微組織也有影響
  5. The presence of small amount of liquid at grain boundaries tends to form thin viscous layer which surrounds the finer grains. intergranular fracture may occur at the grain boundaries between two fine grains not covered by viscous phases. the high ductility achieved at low strain rates is generally attributed to dislocation glide - creep accommodation mechanisms

    原始晶界上產生少量液相，形成薄的固液共存粘性層並包圍細化的晶粒，沿晶斷裂主要發生在無粘性層的細晶粒間；而在較低應變速率下，三叉晶界位錯攀援?蠕變協調機制鬆弛晶界滑移產生的應力集中，晶界上產生較多液相，有利於晶界滑移進行。
  6. Many dislocations were emitted from the grainboundary in the front of crack and were driven out of grain boundary area, leaving dislocation free zone in the front of grainboundary. a concept of grainboundary dislocation free zone is proposed. the deformation in the front of crack tip in magnesium was single slip, which resulted in the thinning in the area of crack tip

    首次發現裂尖前方晶界對裂尖發射的位錯有排斥作用，裂尖前方的晶界可以向晶界兩側晶粒發射位錯，位錯從晶界發出后迅速離開晶界向前運動，形成晶界無位錯區，首次提出晶界無位錯區的概念。
  7. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  8. Defects such as extended dislocations, pile - ups of dislocation and grain boundaries ( twin boundaries ) were also investigated

    塗層中存在擴展位錯、位錯塞積列、 （孿）晶界等晶體缺陷。
  9. Under the careful retrospection and analysis on the previous and recent experiments about mechanical behavior of nanocrystalline metals performed by almost main investigators, the dislocation and atomic diffusion is believed to contribute hardly to the deformation of nanocrystalline alloy, and a model based on thermal activation process was applied to fit the experimental data of nanocrystalline ag

    結果表明，納米晶金屬ag的不僅具有比粗晶ag高2 - 6倍的拉伸和壓縮強度，而且在大范性形變階段顯示了極低的加工硬化和應變速率敏感性。結合位錯理路和非晶合金形變特徵，提出納米晶金屬ag的塑性變形主要由於晶界滑移貢獻。
  10. From an examination of the tensile behavior of cz ly12 alloys under different temperature and strain rate, two kinds of deformation and intergranular fracture behaviors were observed that were opposite to the characteristic strain rate range in fine - grained superplasticity. the mechanisms are described as follows. the high ductility achieved at high strain rate is generally attributed to the dominant role of gbs accommodating mechanisms, which is considered as dislocation creep within grains controlled by subgrains

    研究選用自然時效淬火態的ly12鋁合金，進行了一系列不同溫度和應變速率下的單軸拉伸試驗， 480下，觀察到與傳統細晶超塑性特徵區間相反的行為：較高應變速率下，動態再結晶使晶粒細化，促進了晶界滑移，亞晶界控制的晶內位錯蠕變是晶界滑移的主要協調機制。
  11. The distribution or the morphology of grain boundaries, dislocations and precipitates in crystalline silicon were observed by scanning infrared microscopy ( sirm ), and much useful information was obtained

    通過紅外掃描儀觀察晶體矽中的晶界、位錯和不同金屬沉澱的分佈和形貌，並分析其相關信息。
  12. The microprocesses of deformation and fracture in 18 - 8 stainless steel were observed by in - situ tension in tem. it was found that the dislocations were emitted from the grainboundary and dislocation source inside a grain and slip along their slip system respectively. partial dislocation could also be emitted from the grainboundary, and moved into the grain, and that leaving behind a stacking fault

    摘要浙江人學博1 ：學位論文採用透射電鏡動態拉伸、原位觀察icrlsnigti不銹鋼形變與斷裂過程，發現不銹鋼變形時，晶界和晶內位錯源均可產生位錯，並沿各自的滑移系運動。
  13. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  14. In order to improve the properties of materials, one needs to understand the structural relationship between interface and matrix of the materials, such as interface atomic structure, misfit dislocation, chemical bond structure, stress field distribution, composition segregation etc. there are tremendous research works on the grain boundary and interface structures during last century and the sophisticated theory about grain boundary and interface, i. e. coincidence site lattice and 0 - lattice theories had been developed simultaneously

    眾所周知，材料的宏觀性質是由其微觀結構所決定的，因此，為了改善材料的宏觀性能我們有必要弄清楚材料的界面與基體之間的結構關系，如界面的原子結構、失配位錯、化學鍵合、應力場的分佈等等。在上世紀，人們已對晶界和相界面結構進行了大量的研究，同時，相關的理論如「重位點陣」和「 o -點陣」理論也發展成熟。
  15. The refinement mechanism of grain at room temperature can be described as dislocation tangle and dislocation node form in the initial grain with severe plastic deformation, then the dislocation node form subgrains or grains. subgrains become grains by snipping of the subgrain boundaries under the action of shearing stress

    室溫ecap細化晶粒的機理可描述為：隨著強烈塑性變形的進行，原始晶粒中產生了很多位錯纏結和位錯胞，進而位錯胞崩塌變為亞晶或晶粒，亞晶粒在後續ecap剪應力作用下，通過亞晶界被剪斷而變為晶粒。
  16. Based on the microscopic tem and sem observations, relationships between dislocation structure and rate - dependent / rate - independent behaviors under certain range of temperature and strain rate were presented. interactions between grain boundaries and dislocations were analyzed

    利用tem 、 sem分析手段，觀察到一定溫度和應變速率區間內率相關與率無關變形的位錯組態區別，及晶界對位錯的不同作用。
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