晶界擴散 的英文怎麼說

中文拼音 [jīngjièkuòsǎn]
晶界擴散 英文
grain boundary diffusion
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 擴 : 動詞（擴大） expand; enlarge; extend
  • 散 : 散動詞1. （由聚集而分離） break up; disperse 2. （散布） distribute; disseminate; give out 3. （排除） dispel; let out
  1. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  2. The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation

    通過多孔硅重磷擴散鈍化及低頻等離子體氫鈍化等多晶硅太陽電池晶界鈍化，改善了太陽電池性能。
  3. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  4. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  5. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  6. It was found that the interfacial bonding of 93w - ofc was both the joining action of ofc / w grains and that of ofc / ni - fe binders, whereas the joining of ofc to tc4 could be seen as the mutual intense diffusion effect between ofc / tc4 and as a result cu - ti intermetallic compounds were formed at the joint. the joining of tc4 - a1 and a1 - mb2 were also attributed to the result of diffusion between elements ti - al and al - mg respectively. on the other hand, residual thermal stress and stress - induced distortion were produced at the joint simultaneously due to the difference in thermal expansion coefficient of different welding " materials

    研究表明， 93w與ofc的界面連接是ofc與93w中w晶粒的連接以及ofc與93w中ni - fe粘接劑的連接共同作用的結果； ofc與tc _ 4連接界面的形成是由於ofc與tc _ 4之間發生反應擴散，並由此在二者接頭處生成了cu - ti金屬間化合物的中間相； tc _ 4 - al的連接與al - mb _ 2的連接則分別是其基體元素ti 、 al之間和al 、 mg之間元素互擴散的結果，另外，由於熱膨脹系數的差異，擴散焊接后在不同焊件的接頭處存在殘余熱應力並由此引起接頭的形變。
  7. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  8. The report for sio2 passivation and forming gas treatment utilization in domestic scale manufacture as well as the detail abroad technologies has not been read. porous silicon heavy phosphorous diffusion passivation and grain boundary recombination velocity for multicrystalline silicon solar cells have not been reported

    其中sio _ 2表面鈍化和forminggas處理在規模化生產上的應用國內未見報導，國外技術無詳細報導，多孔硅重磷擴散多晶硅鈍化及多晶硅晶界復合速度表示未見報道。
  9. Moreover, the falling rate of its microhardness is minished. molybdenum wire doped with la2o3 is better at enhancing mechanic properties and microstructure than molybdenum wire doped with y2o3. furthermore, la2o3 particles are easier to diffuse to the grains boundary than y2o3 particles under high temperature

    此外，本實驗還發現，摻雜la2o3比摻雜y2o3更有利於提高鉬絲高溫下的力學性能，改善鉬的燒結態形貌，降低其孔隙率，減小其晶粒尺寸，且la2o3顆粒比y2o3的顆粒更容易在高溫下擴散到晶界上去。
  10. In this paper, mapinfo profession 6. 0 was applied to build and manage space geographical information ; mapinfo mapx4. 5 was used as a activex control to model and describe the air diffusing area of the spilled gas chemical, by the technology of ole, made used of the integrating environment of visual basic 6. 0, we finished developing research on the air diffusion system of spilled gas chemicals based on gis. the system can dynamically show the diffusion range of spilled gas chemicals on computer screen after inputting necessary parameters. the paper include 7 chapters

    我們是以mapinfoprofession6 . 0作為空間地理信息建立和管理工具， visualbasic6 . 0作為系統用戶界面開發與計算模塊編程工具， access2000作為有關數據庫開發與管理工具， mapinfomapx4 . 5地理信息系統地圖控制項作為計算機模擬顯示控制項，通過ole技術，在vb的集成環境下進行「基於gis的水運氣體化學晶泄漏大氣擴散模擬系統」的開發創建。
  11. 6. the melting of the grain boundary is the reason of the semi - solid grain globalization, and its control factors were the atomic diffusion velocity and the liquid - solid interface curvature

    6 、半固態晶粒球狀化的基本原因是晶界熔化，其控制因素是因液界面處原子擴散遷移的速度和界面曲率。
  12. It is found that, the sintering process of w - ni - fe - cu alloy was a typical liquid - phase process, which including particle rearrangement stage, dissolving - precipitation stage and solid - phase sintering stage. cu plays an important role in the particle rearrangement stage, while fe can promote the densification by forming ni - fe - w bonding - phase. ni can not only form the bonding - phase, but also enhance the diffusion between the w grains

    研究表明， w - ni - fe - cu合金的液相燒結緻密化經歷了顆粒重排、溶解-析出和固相燒結等三個階段， cu僅在顆粒重排階段起主導作用； fe主要在溶解-析出階段通過形成ni - fe - w三元粘結相來促進w合金的燒結緻密； ni不僅參與形成ni - fe - w三元粘結相，並且在w晶界上通過與w的互擴散促進了固相w晶粒的粘合。
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