晶界遷移 的英文怎麼說

中文拼音 [jīngjièqiānyí]
晶界遷移 英文
crystal boundary migration
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. Effects of strain of grain boundary migration in nanocrystalline copper

    應變對納米銅晶界遷移的影響
  2. We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation. in general, hydrogenation is prepared after completing of tft, in this way, we need more radio frequency power and time, so the cost of hydrogenation will raise

    而通過氫化可以大大降低多晶硅薄膜晶粒邊界中的懸掛鍵和界面陷阱，從而顯著提高tft的場效應遷移率和開態電流，減少關態電流，提高tft的電學性能。
  3. Mgo and al2o3 can form mgal2o4 existing mainly on the grain boundary through solid phase reaction, which limited the migration of the grain boundary and thereby inhibited the abnormal growth of the alumina grain

    Mgo能與al _ 2o _ 3發生固相反應生成主要存在於材料晶界處的mgal _ 2o _ 4 ，限制了晶界的遷移，從而抑制了氧化鋁晶粒的異常長大。
  4. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  5. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  6. It is the especial congregate structure of polymer matrix that is necessary for the forming of three - dimensional interpenetrate network between the polymer and copper. the mma unites lead to the advantage of improving fiexibity of the film, destroying the formal arrangement of macromolecule chain in polymer and decreasing the degree of crystallization. the ita unites help the solvolyzed copper ion transfer in the film and benefite the forming and establishment of the networks of polymer matrix

    聚合物基體特殊的聚集態結構是互穿立體網路形成的必要條件，皿m的加入有利於破壞丙烯睹大分子鏈的規整性，使結晶度降低，提高聚合物的柔韌性，含親水基團的單體（ ita 、 as ）存在有利於降低離子遷移的界面能，提供溶劑化銅離子遷移的途徑以及聚合物基體網路結構的形成和穩定。
  7. By means of xrek sem, mip, bet modern testing apparatus and avenue, reinforced durability of nthpc mechanism by fd - 1 is studied. it is proved that mineral admixture can prompt pore tiny, promote interface station and decrease ch phase. ca ( no2 ) 2 can activate hydration reaction at early age, but it harasses migration mechanism of water in micro - pore,

    試驗證明，礦物外加劑使水泥漿體孔徑細化、水化產物相密實、界面過渡區改善、 ch晶相總量減少; ca困02 ） 2促進和穩定了ch晶體生成，但改變了水泥石中水的遷移機制，包括遷移途徑和速度。
  8. 6. the melting of the grain boundary is the reason of the semi - solid grain globalization, and its control factors were the atomic diffusion velocity and the liquid - solid interface curvature

    6 、半固態晶粒球狀化的基本原因是晶界熔化，其控制因素是因液界面處原子擴散遷移的速度和界面曲率。
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