晶體半導體 的英文怎麼說

中文拼音 [jīngtǐbàndǎotǐ]
晶體半導體 英文
crystalline semiconductor
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Single crystal silicon is the semiconductor material which is used mostly in the present electronic industry, it play a very important role in the field of aviation - astronavigation, optics, electron and micro - electronics

    單晶硅材料是當代電子工業中應用最多的半導體材料，它在航空航天、光學、電子和微電子等領域發揮著十分重要的作用。
  2. Semiconductor devices - part 7 : bipolar transistors

    半導體裝置.第7部分:雙極晶體管
  3. Cryostat end - cap dimensions for germanium semiconductor detectors for gamma - ray spectrometers

    鍺半導體射線光譜分析儀用鍺半導體探頭晶體端.帽罩尺寸
  4. Calculation of the lattice mismatch between semiconductor epitaxy and substrate

    半導體外延層晶格失配度的計算
  5. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  6. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  7. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  8. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  9. Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method

    半導體工藝材料的試驗.硅單晶中載流子壽命的測量.用
  10. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  11. Semiconductor devices. harmonized system of quality assessment for electronic components. ambient rated photocouplers with phototransistor output. blank detail specification

    半導體器件.電子器件質量評估協調體系.帶光電晶體管輸出的特定環境溫度光電耦合器.空白詳細規范
  12. Applying two perpendicular polarized light states and a no - light state to express information, this new theoretical system covers : a ) whole architecture constructed from light processing, light transmission, electric control and photoelectric input and output ; b ) various computing units mainly consist of liquid crystal element and polarimeter ; c ) light bus mainly consists of interlinkage optic valves ; d ) ternary memory formed from semiconductor memory ; e ) register formed from optic fiber ring ; and i ) huge - numeral management based on the new concept of calculating path and calculating channel

    這個理論包括：光處理、光傳送、電控制、綜合輸入輸出的總體結構；以液晶元件和偏振器為主的各類運算器結構；以互連光閥為主的光空間總線；以半導體存儲器為主的三值數據存儲器結構；以光纖環為主的寄存器結構；以算位、算道新概念為基礎的巨位數管理方案等。
  13. Semiconductor quantum dots ( qds ) are inorganic nanocrystals consisted of a cadmium selenide ( cdse ) core which was wrapped in an outer shell of zinc sulfide ( zns )

    摘要半導體量子點是無機納米結晶，構成於硒化鎘核心和硫化鋅外殼。
  14. These crystals are the basis of the semiconductor chips which run modern computers.

    現代計算機里使用的半導體晶元都少不了這種結晶體。
  15. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  16. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  17. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  18. The temperature sensor based on the absorption properties of an indirect semiconductor

    該傳感器採用單晶硅半導體材料為溫度敏感材料。
  19. Led stands for light emitting diode, a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light, using the characteristics of compound semiconductor. this is used for household appliances, remote controller, electric bulletin board, various kinds of automation appliances

    它是利用固體半導體晶元作為發光材料，在半導體中通過載流子發生復合放出過剩的能量而引起光子發射，直接發出紅黃藍綠青橙紫白色的光。
  20. Moreover, these materials are cheaper only because of the introduction of disordering in crystalline semiconductors, and disorder degrades the efficiency of crystalline solar cells

    而且，這些材料之所以便宜，惟一原因是在製造晶體半導體設備時使用了無序性方法，而無序性降低了晶體太陽能電池的功效。
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