晶體導電 的英文怎麼說

中文拼音 [jīngtǐdǎodiàn]
晶體導電 英文
crystal conduction
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. As a comparison, ba1. 03ce0. 8gd0. 2o3 - was synthesized by sol - gel method. among these samples, nonstoichiometric samples were synthesized for the first time. the research work involved : the crystal phase of the sinters were determined by xrd ; ionic conduction under different experimental atmospheres was measured by gas concentration cells ; performances of hydrogen - air fuel cells with the sinters as electrolytes and porous pt as electrodes were measured

    用粉末x射線衍射儀鑒定它們的結晶相；在（ 600 1000 ）范圍內，以燒結體作為電解質隔膜，多孔性pt黑為正、負電極， pt - rh合金網為集電極，分別組成氫濃差電池、氧濃差電池及氫?空氣燃料電池並測定了它們的性能，研究了不同氣氛下樣品的離子導電特性及影響燃料電池性能的因素。
  2. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  3. Piezoelectric sensors, commonly known as quartz crystal microbalance, are sensitive to multiple signals such as the surface mass and the viscosity, density, dielectric effect, conductivity of the liquid

    壓電傳感技術則是一種比較成熟的傳感技術，可響應石英晶體表面的質量變化及溶液粘度、密度、介電常數、電導率等參數。
  4. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  5. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  6. Semiconductor devices. harmonized system of quality assessment for electronic components. ambient rated photocouplers with phototransistor output. blank detail specification

    半導體器件.電子器件質量評估協調體系.帶光電晶體管輸出的特定環境溫度光電耦合器.空白詳細規范
  7. The process of growing ktp crystal of high quality and low conductivity was studied. it was pointed out that many factors such as the uniformity of temperature distribution in the furnace, the accuracy of temperature control, the quality and direction of seed crystal and the speed of temperature drop all had an important influence on the quality of ktp crystal

    研究了生長高光學質量、低電導率ktp晶體的工藝過程，指出晶體生長爐溫度場的均勻性、控溫精度、籽晶的質量和定向以及降溫速度的快慢對晶體的光學質量有著重要的影響。
  8. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  9. Preparation of stibium - doped conductive tin dioxide nanocrystalline by high temperature burning

    高溫燒制導電摻銻二氧化錫納米晶體
  10. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  11. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes

    本文就是在此背景下，利用金屬波導和單軸晶體的一些特性，結合麥克斯韋方程組和波導的邊界條件，從三種不同的情況研究了光在對稱平面單軸晶體金屬波導（波導層是單軸晶體，兩個波導界面均為金屬）內的傳輸特性，其主要貢獻為，首次解析地得到了這種波導結構下模式場的精確解，並發現了一些有用的特性： （ 1 ）模式場的性質因單軸晶體的性質不同而異； （ 2 ）當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時，波導中傳輸te波和tm波，只不過其主模因單軸晶體的性質不同而異，當波導層介質為負單軸晶體時，波導主模是te波主模，而波導層介質為正單軸晶體時波導主模是tm波主模。 （ 3 ）當單軸晶體光軸位於波導面內時，對于正單軸晶體，波導的主模是橫電波te _ 0模，任何頻率的光波均可激勵該模式；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階模式，高階模即匪te波，也匪tm波，而是兩者耦合而成的混合模。
  12. The trained neural network model can be used to solve a variety of problems emerged in rf / microwave circuit design, such as in microwave circuit cad, the established model structure can be used to characterize the nonlinear behavior of microwave circuits

    如用於微波電路cad ，可用所建立的模型結構來描述這么一類微波電路的非線性行為特徵；如用於微波電路設計，則可進行如共面波導、晶體管、傳輸線、濾波器和放大器等的設計；如用於微波電路優化，則可用所建立的電路模型優化電路參數，進行阻抗匹配等。
  13. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。
  14. However, inhering limit from that in the layered and spinel structures, there is no continuous network of feo _ 6 edge - shared octahedral that might contribute to electronic conductivity, resulting in a extremely low electronic conductivity, which has been the greatest obstacle for application of lithium ion phosphate

    然而由於晶體結構的固有限制， lifepo _ 4具有極低的電子導電率，這已成為限制其應用的最大障礙。
  15. It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x

    晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。
  16. The tests of e - o applications by our flux ktp has been realized, the results showed : optical waveguides fabricated by using an ion - exchange process, which have an exchange - ion concentration depth profile and refractive - index profile, is close to a complementary error - function distribution, optical homogeneity and device thermal stability is much better. amplitude modulation switch formed by our flux ktp has the contrast ratio of 150 : 1 and insert loss is 2. 5 % at 1064 nm. high quality optical pulse with 1 ns width was cut successfully by using an e - o modulator from a laser pulse with 50 ns width, this modulator had run for three years, and the crystal did n ' t blackened, it showed our low conductivity flux ktp can endure high modulation voltage for a very long time

    Ktp晶體的電光應用試驗表明：用離子交換法製作的電光波導，其離子交換濃度、折射率變化符合餘弦誤差函數，光學均勻性以及器件的溫度穩定性較好；製作的強度調制電光開關，消光比為150 ： 1 ，對1064nm激光的插入損耗為2 . 5 ；製作的電光調制器用於激光脈沖整形試驗，從脈沖寬度50ns的激光脈沖削出脈寬1ns的高質量光脈沖，該電光開關經過長達三年多的使用，沒有出現晶體變黑現象，說明本實驗的低電導率ktp晶體能夠耐受長時間的調制電壓。
  17. Discrete semiconductor devices and integrated circuits - field - effect transistors - additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors

    分立半導體器件和集成電路.場效應晶體管.電源轉換場效應晶體管測量方法中附加功率特性和amds
  18. The researchers developed a manufacturing method that begins by making a bas - relief mold in a quartz plate that contains an indented image of transistors, wires or other components of electronic circuits

    研究人員所發展的製造方法，是先在一塊石英板上做出淺浮雕鑄模，上面縮印了電晶體、導線或其他電子?路，然後再把這個鑄模放到晶片表面的一層液態單體上，液體便會填滿鑄模的凹陷處。
  19. ( 3 ) through the study of electrical property of irradiated rutile by high - dose neutron, the curse of relationship of conductivity and temperature has been abtained. according to this relationship, the conducting behavior in diflrent temperature is also studied

    本論文工作還對高注t中子輻照后金紅石晶體的電學特性進行了研究，得到了它在空氣和真空中的電阻與溫度的關系，分析了各個溫區的導電機制。
  20. Our company develops various devices such as diodes used for switching power supply, transistors, semiconductors, silicon surge protectors, solenoids, and photosensitive drums used for digital plain - paper copiers, printers and other equipment

    開發從用於開關電源的二極體到晶體管電阻元件等半導體以及用於螺線管數字ppc印表機上的感光體等。
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