晶體成長 的英文怎麼說

中文拼音 [jīngtǐchéngzhǎng]
晶體成長 英文
crystal field effect
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.

    再略為詳細地討論液相外延生長過程，因為晶體生長是實現集成光路使用的必不可少的一個環節。
  2. Location is important. " fairbanks sometimes offers some unusual crystal types, because it ' s so cold, " libbrecht said

    「我試圖搞清楚晶體成長的動力所在，一直分析到分子水平，這是個非常復雜的問題。 」
  3. Through the study of the example of shaxi porphyry body in anhui province, the authors first figured out the storage time of plagioclase phenocrysts, then calculated the nucleation rate and growth rate of the crystals and, on such a basis, established the thermal model for cooling of the hypabyssal magmatic system

    本文試圖通過對安徽沙溪斑巖體進行實例研究，先求出斜長石斑晶的存儲時間，再算得晶體成核速率和生長速率，進而建立起淺成巖漿體系冷卻的熱模型。
  4. These defects appear during crystal growth, but crystals having such defects are not considered usable for ic manufacture and are discarded.

    這些缺陷在晶體生長時出現，有這類缺陷的晶體不能用於集成電路製造，應報廢。
  5. The results show that the deposition of nickel on the substrate do not undergo upd process, but undergoes nucleation process. in the experimental conditions, the electrocrystallization of nickel follows the mechanism of three dimensional progressive nucleation and growth

    結果表明，鎳在該基體上的沉積沒有經歷upd過程，鎳的電沉積經歷了晶核形成過程，在所研究的外加電位范圍內，其電結晶按連續成核和三維生長方式進行，外加電位對晶體生長具有顯著的影響。
  6. Chondroitin sulfate a ( c4s ), as a kind of endogenetic urinary macromolecule, not only increased the supersaturation of cac2o4 in solution, but also inhibited the two - dimensional growth and aggregation of com crystals. the growth of calcium oxalate crystals was influenced by surface pressure beneath dppc monolayer film. there were some crystals which have the same appearance as com crystals obtained from pure water system when monolayer surface pressure was hold 1, 10 and 30 mn / m while those growth at 20 mn / m were perfect orderly induced by dppc monolayer

    生物大分子c _ 4s作為一種內源性的尿大分子，它不僅從熱力學上提高ca ~ （ 2 + ）在尿液中存在的濃度，使體系中cac _ 2o _ 4保持較高的相對過飽和度，降低草酸鈣結石成核的可能性；而且在晶體生長時，抑制com晶體晶面的二維生長和晶體聚集。
  7. Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth

    文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。
  8. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  9. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  10. It ' s well - known that nucleation consisted of homogeneous nucleation and heterogeneous nucleation. the organic matrix used as the template to induce inorganic crystal growth and simulate the biomineralization is actually to promote heterogeneous nucleation and inhabit homogeneous nucleation. urinary stone is a kind of product of unusual biomineralization

    眾所周知，結晶過程中的成核有均相成核和非均相成核兩種可能，利用有機基質做模板，誘導無機晶體生長，模擬生物體內的礦化過程實際是促進非均相成核而抑制均相成核。
  11. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  12. Crystal growth technique of some optical materials is also being studied hoping to manufacture useful tunable solid state lasers

    本小組亦有興趣于某些光學材料之晶體成長技術，以期能製成有用之固態可調雷射。
  13. In crystal growth experiment, aggas2 crystal was growen in special quartz ampoule by crucible descending method ( b - s method ). the equipments were used, which consist of a two - zone vertical growth furnace whose temperature gradient is tunable, a descending device with decelerating rate of 1 : 2000, a controlling system of electy and a temperature testing system using thermal couples

    晶體生長實驗中，我們利用上下溫度梯度可調的二溫區管式生長爐， 1 2000減速比的旋轉下降系統，電氣控制系統和密集適時測溫系統等，在特殊形狀的石英生長安瓿中，採用坩堝下降法（ b - s法） ，以合成的aggas _ 2多晶原料進行晶體生長。
  14. At every step of production, from crystal growth to device packaging, numerous refinements are being made to improve the yield and reliability.

    在生產中，為提高其成品率和可靠性，從晶體生長到器件封裝每一步工序均有很多細致工作要做。
  15. The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %

    本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上，長度80mm以上的平界面無核心nd : cngg單晶，確定了晶體結構和物相，測量了晶體的光譜性能，晶體消光比達到34db ，晶體生長技術有新的突破，實現了連續激光運轉，用單支807nm半導體激光二極體端面泵浦該晶體片子，在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出，斜效率達22 . 3 % 。
  16. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  17. Taking in - situ toughened silicon nitride as a design object, principle component analysis ( pca ) is applied to study the microstructure and mechanical properties, to find out the main microstructure controlling factors, and to simplify the characterization variables and criterions ; fuzzy neural networks ( fnns ) is also applied to develop a design expert system for this material, which can realize the forward prediction from processing, microstructure to mechanical properties, and backward design from mechanical properties or microstructure to processing ; monte - carlo method is applied to simulate the grain growth of this material, and then crack propagation is simulated, which is another way based on physics and chemistry to developing prediction models from processing until to mechanical properties

    本文以自增韌氮化硅陶瓷為設計對象，運用主成分分析法（ principlecomponentanalysis ： pca ）對自增韌si _ 3n _ 4陶瓷的顯微結構和力學性能進行數據空間降維，獲得自增韌si _ 3n _ 4陶瓷顯微結構控制的主要因素，進而簡化了表徵參量變量和準則；運用模糊神經網路（ fuzzyneuralnetworks ： fnn ）建立了自增韌si _ 3n _ 4陶瓷設計專家系統，能實現工藝?微結構?性能的正向預測及反向設計；運用monte - carlo方法（ mc ）進行自增韌si _ 3n _ 4陶瓷的晶體生長模擬，然後進行裂紋擴展模擬，探索建立工藝?微結構?力學性能預測模型的思路。
  18. This article give some suggestion about mass - production of sapphire and china broad company becoming one of the largest production base in asia. it includes management experience, analysis about the market and the competitors and strategy about the future of the company. it gives strong support of the necessacity and fiseabilty of the project

    本文以項目建議書的形式，對華博公司擴大生產規模並建成亞洲最大的藍寶石晶體生長和加工基地進行充分的論證，既有對公司優勢劣勢的評估和公司建成兩年多來經營和管理經驗的總結，也有對國際和國內的市場情況、競爭對手的分析，更有對公司未來經營戰略的闡述。
  19. The lb films of dppc were also used to study the growth of calcium oxalate crystals

    將磷脂dppc的單分子膜提拉成磷脂lb膜，並用其誘導草酸鈣晶體生長。
  20. It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb. so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation

    本文在分析界面能的基礎上，推導了在一定條件下薄膜受摻tb影響的鈣鈦礦相析晶含量的理論表達式為： y 1 yxp （ k ； xxp （ kcos （ s ? （ x a ） 』 ）該式表明了受體系成核界面能的變化影響，晶體生長受摻tb濃度影響出現極值。
分享友人
分享到 Line

分享到臉書