晶體生長機 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎngjī]
晶體生長機 英文
crystal grower
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 機 : machineengine
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. Based on the crystal growth elementary principle, a plagioclase crystalline velocity equation is suggested

    從晶體生長的基本原理出發，提出了按非連續機制生長的斜長石晶體結晶速率表達式。
  2. Scientific computing study on growth mechanism of spinel

    尖晶石晶體生長機理的科學計算研究
  3. Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth

    文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。
  4. The paper also analyzed the crystal defeat formed in the process of growth and put forward to the solution, furthermore, the mechanism of needle - like growth was discussed

    並對晶須生長過程中所形成的各種晶體缺陷進行了分析，提出了解決辦法。同時對羥基磷灰石晶須針狀生長的結晶學和界面動力學機理進行了探討。
  5. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  6. It ' s well - known that nucleation consisted of homogeneous nucleation and heterogeneous nucleation. the organic matrix used as the template to induce inorganic crystal growth and simulate the biomineralization is actually to promote heterogeneous nucleation and inhabit homogeneous nucleation. urinary stone is a kind of product of unusual biomineralization

    眾所周知，結晶過程中的成核有均相成核和非均相成核兩種可能，利用有機基質做模板，誘導無機晶體生長，模擬生物體內的礦化過程實際是促進非均相成核而抑制均相成核。
  7. Summary on the growth mechanism of crystal

    晶體生長機理的研究綜述
  8. Preliminary study on the evaluation system of digital libraries

    外延晶體學位相關系和生長機理研究
  9. In addition, the growth mechanism on porous silicon has been discussed in view of growth kinetics

    從晶體生長動力學角度分析了多孔硅上外延硅的生長機理。
  10. In this paper, the present situation and development of the research on growth mechanism of crystal are also discussed

    對晶體生長機理的研究現狀和發展趨勢予以了討論。
  11. Crystal morphology and growth mechanism of sphalerite crystallites were studied by formulating the mathematical model and calculating the stability energy of the growth units on the basis of the theoretical model that the growth units are polyhedral structure of coordinative anions

    摘要本文從負離子配位多面體生長基元模型出發，建立了閃鋅礦晶體生長基元的數學模型，通過對閃鋅礦晶體生長基元穩定能的計算，討論了閃鋅礦的結晶形態和生長機理。
  12. And considerable work has been done hi the growth behaviour in the tetrachloride solution concluding studies of crystal growth and growth kinetics. a crystal of dimensions 20mm x 20mm x 1mm was produced hi the tetrachloride solution by lowing temperature. and bcf spiral growth mechanism for the surface diffusion model was analyzed using the kinetic data

    本文以苯為溶劑溶液降溫法培養出了60mm 40mm 3mm大尺寸hhm單晶；另外探討了hhm在四氯化碳溶液中的生長行為，溶液降溫法培養出了20mm 20mm 1mm的較大尺寸單晶，並用動態循環體視顯微鏡觀察法測定了其在不同的過飽和下主要顯露晶面的法向生長速率，在較大過飽和度范圍內考察了其bcf表面擴散螺位錯生長機制。
  13. In chapter 2, not only some concrete prob1ems about the three - dimensional simulation model of ceramic grain growth such as the received forces of the ions in the grain, random orientation of grans and boundaxy problem, but also the design and development of simulation software are discussed

    第二章陶瓷晶粒生長模擬的三維擴展：從二維模擬模型出發，討論三維模擬模型擴展的一些具體問題如離子的受力情況、晶粒的隨機取向和邊界處理問題，最後詳細介紹三維模擬軟體的設計和實現。
  14. Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins

    在前人對非金屬礦物材料表面改性的基礎上，結合環境礦物纖維?坡縷石自身的特點（如：長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等） ，通過對坡縷石有機化改性設計正交試驗，採用（ ch _ 3 ） _ 2choh作為稀釋劑，獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件，分別為： wd - 51的濃度為1 . 6 （ wt ） ，改性溫度為120 ，改性時間為60min ； ndz - 401的濃度為2 . 0 （ wt ） ，改性溫度為120 ，改性時間為80min 。
  15. In this paper, pmnt, pznt single crystals in the vicinity of the morphotropic phase boundary were obtained by high - temperature solution technique. the growth, structure and phase stability of single crystals were studied. the results are shown as follows : 1

    本論文採用高溫熔液法技術，對用高溫熔液法生長弛豫鐵電單晶材料工藝進行了研究，成功地制備出準同型相界附近的pmnt 、 pznt單晶材料，分析了晶體形成、晶體結構及其相結構穩定性，並對生長機理作了初步探索，主要研究結論如下： 1
  16. A kind of novel composite photocatalysts containing tio2 and tourmaline particles, such as tourmaline / tio2 composite photocatalysts and tourmaline / [ tio2, sio2 ] composite photocalysts, were fabricated mainly by the sol - gel technique, whose microstructure, photocatalystic activities and spontaneous polarization were investigated by the scanning electron microscope ( sem ), uv - visible spectro - photometer, etc. the novel porous composite films of tourmaline / tio2 were prepared from alkoxide solutions on the surface of copper by sol - gel method

    本工作利用電氣石礦物材料的天然電極性、輻射紅外線性能和tio _ 2的光催化性能，研製以電氣石為載體， tio _ 2薄膜和[ tio _ 2 ， sio _ 2 ]復合薄膜為催化劑的新型復合催化材料。研究材料的制備技術、結構、性能及電氣石表面tio _ 2晶體生長機理、電氣石增強tio _ 2光催化效率機理。
  17. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  18. In this study, we discussed the drive force and mechanism of growing ktp crystal, studied the influence of doping elements on the habits of crystal growth, described and explained its morphology

    本文討論了ktp晶體生長的驅動力和生長機制，研究了摻質對ktp晶體生長習性的影響，並對其形貌進行了描述和理論上的解釋。
  19. Monte carlo simulation study on crystal growth mechanism and kinetics

    晶體生長機制和生長動力學的蒙特卡羅模擬研究
  20. The growth mechanism of dkdp crystal was described by the formation, diffusion and adsorption of growth unit of dkdp crystal. the method of increasing the growth rate was discussed

    從dkdp晶體生長基元的形成、擴散、吸附等方面研究了dkdp晶體生長的微觀機制，提出了提高晶體生長速度的具體方法。
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