晶體生長速度 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎngsùdù]
晶體生長速度 英文
crystalline growth velocity
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 速 : Ⅰ形容詞（迅速; 快） fast; rapid; quick; speedy Ⅱ名詞1 （速度） speed; velocity 2 （姓氏） a surna...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  • 速度 : 1. [物理學] velocity; speed; blast; bat 2. [音樂] tempo3. （快慢的程度） speed; rate; pace; tempo
  1. The experimental results show that the cycle of the mother liquid increases the yield of the product, the seed crystal can improve long - diameter ratio remarkably, the proper additive reduces the speed of crystal growth and make size distribution homogenize. through appending different seed crystal and bivalent lead at one time, we may receive when the content of the seed crystal is 0. 075 % and pb2 + is 20 - 50ppm, the yield of the basic magnesium chloride whisker is high and crystal shape is good. the surface active agent can improve dispersion performance of the basic magnesium chloride whisker

    研究結果表明：母液循環可以提高堿式氯化鎂晶須的產率；添加晶種可明顯的改善晶形；合適的添加劑可以降低晶體生長速度並可提高晶須的粒徑分佈；而同時加入不同用量的晶種和pb ~ （ 2 + ） ，試驗結果表明晶種含量在0 . 075 ， pb ~ （ 2 + ）在20 50ppm時，晶須的產率高，晶形好；表面活性劑對產品的分散性能有所改進。
  2. The process of growing ktp crystal of high quality and low conductivity was studied. it was pointed out that many factors such as the uniformity of temperature distribution in the furnace, the accuracy of temperature control, the quality and direction of seed crystal and the speed of temperature drop all had an important influence on the quality of ktp crystal

    研究了生長高光學質量、低電導率ktp晶體的工藝過程，指出晶體生長爐溫度場的均勻性、控溫精度、籽晶的質量和定向以及降溫速度的快慢對晶體的光學質量有著重要的影響。
  3. In this paper, the course of isothermal crystallization kinetics of polymer in limited volume unit is simulated by use of the method of monte carlo. four factors influenting on the course of polymer in the limited volume unite isothermal crystallization are analyzed under the given conditions. the four factors are sample volume shrinkage, the change of the linear growth rate of entities g, the change of sample thickness and the change of the number of nuclei

    本文採用montecarlo方法研究了高聚物在有限體積元中的等溫結晶動力學過程，分析了在一定條件下，樣品體積收縮、晶體線生長速率變化、樣品厚度變化和晶核數目變化這四種因素對高聚物在有限體積元中的等溫結晶過程的影響。
  4. The crystallization and melting behavior of mellocene - catalized branched and linear polyethylenes of low molecular weight was studied. it was found that the crystalline lattice of branched polyethylene is larger than that of linear polyethylene because of the existence of branched chains. the melting behavior of branched polyethylene is similar to that of linear polyethylene since the branched chains can not enter the lattice. however, the crystalline behavior of low molecular weight branched polyethylene is the same as that of high molecular weight linear polyethylene, but different with that of low molecular weigh linear polyethylene. kinetics theory analysis evidenced that the transition temperature of growth regime of the branched polyethylene is about 20 lower than that of linear polyethylene with the same molecular weight. it may be attributed to the existence of short branched chains

    研究了金屬茂催化的低分子量支化聚乙烯和線性聚乙烯的結晶及熔融行為，發現支化聚乙烯的結構與線性聚乙烯相同為正交結構，但晶格略有膨脹.支鏈的存在對熔融行為影響不大，兩種聚乙烯的熔點均隨結晶溫度的升高而非線性增加，表現出低分子量樣品的共同特徵.但支鏈的存在對結晶行為卻有很大的影響，主要是由於支鏈的存在降低了晶體的結晶速率從而影響結晶過程，使得低分子量的支化聚乙烯的結晶行為與高分子量線性聚乙烯的結晶行為相似而與低分子量的線性聚乙烯不同.動力學分析表明，低分子量的支化聚乙烯的結晶生長方式的轉變溫度比同等分子量的線性聚乙烯降低了約20
  5. And considerable work has been done hi the growth behaviour in the tetrachloride solution concluding studies of crystal growth and growth kinetics. a crystal of dimensions 20mm x 20mm x 1mm was produced hi the tetrachloride solution by lowing temperature. and bcf spiral growth mechanism for the surface diffusion model was analyzed using the kinetic data

    本文以苯為溶劑溶液降溫法培養出了60mm 40mm 3mm大尺寸hhm單晶；另外探討了hhm在四氯化碳溶液中的生長行為，溶液降溫法培養出了20mm 20mm 1mm的較大尺寸單晶，並用動態循環體視顯微鏡觀察法測定了其在不同的過飽和下主要顯露晶面的法向生長速率，在較大過飽和度范圍內考察了其bcf表面擴散螺位錯生長機制。
  6. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  7. Under the condition that the variance of temperature in the furnace was lower than 2. 5oc, the accuracy of temperature control was higher than 0. 2oc and the speed of temperature drop was 0. 2oc ~ 2oc, we grew doped - ktp crystals without obvious defects by immerged - seeded solution method

    在晶體生長爐溫場均勻性高於2 . 5oc 、控溫精度高於0 . 2oc 、降溫速度為0 . 2oc ~ 2oc的條件下，採用浸沒籽晶緩慢降溫法生長出宏觀無明顯缺陷的摻質ktp晶體。
  8. The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well

    對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。
  9. It was showed that the basic varying law of graphite morphologies is as follows : with increasing of growing rate of graphite crystal along direction of [ 0001 ], the morphologies of graphite change from flack shape vermicular shape spheroidal shape explosive shape superspheroidal shape

    研究得出，鑄鐵中石墨變態的基本規律是：隨著石墨晶體沿[ 0001 ]方向生長速度的增加，石墨由片狀石墨蠕蟲狀石墨球狀石墨開花狀石墨過球化石墨。
  10. Experimental results show that the grains were gradually triturated to namometer size with milling time and the grain size might be 30nm or so, but the grain size was not decreasing after the powder has been milled for 25 hours. the nano - sized sic was synthesized by ball milling of si and c mixed powders which rare earths as a additive was added to

    結果表明：隨著時間的延長，粉末逐漸細化至納米級，可以細化到30nm左右，但球磨時間超過25h后粉末顆粒繼續細化的速度明顯放慢，並且在球磨的過程因為晶粒細化和晶粒內部發生了嚴重的晶格畸變，納米粉體x射線衍射峰產生嚴重寬化。
  11. In crystal growth experiment, aggas2 crystal was growen in special quartz ampoule by crucible descending method ( b - s method ). the equipments were used, which consist of a two - zone vertical growth furnace whose temperature gradient is tunable, a descending device with decelerating rate of 1 : 2000, a controlling system of electy and a temperature testing system using thermal couples

    晶體生長實驗中，我們利用上下溫度梯度可調的二溫區管式生長爐， 1 2000減速比的旋轉下降系統，電氣控制系統和密集適時測溫系統等，在特殊形狀的石英生長安瓿中，採用坩堝下降法（ b - s法） ，以合成的aggas _ 2多晶原料進行晶體生長。
  12. The finite element method ( fe '. i ) is adopted to analyze the effects of the numbers of coil turns, current intensity and current frequency upon the rate of joule heat generation in details. the thermo - radiation analytical countermeasures of various types are adopted to carry out the numerical analysis of the effects of the crucible with different shapes and sizes and the blind holes with different depths opened in the tops of crucibles as well as coil positions upon the thermal field distribution whereby solving the main problem of field the thermo - field design of the induction - heating sic crystal growth system. a new combination idea of the thermo - field design obtained by means of the united design of the thermo - insulator and blind holes has been presented

    採用有限元分析方法對線圈匝數、電流強度、電流頻率等對焦耳熱產生速率的影響進行了詳細的分析討論；採用不同的熱輻射分析策略，對不同坩堝形狀、坩堝頂部開設不同深度的盲孔以及線圈的位置等對熱場分佈的影響進行了數值分析，解決了感應加熱碳化硅晶體生長系統熱場設計的主要問題，提出了通過絕熱層與盲孔的聯合設計獲得所需熱場設計的思路，給出了根據軸向溫度梯度的波動對線圈位置實行動態調節以控制熱場的理論依據。
  13. The point seed growth techniques of high quality dkdp crystal in all directions have these features of fast growth rate, high utilization ratio and low growth cost

    點狀籽晶全方位生長dkdp晶體的方法具有生長速度快、晶體利用率高、生長成本低的特點。
  14. The dkdp crystal with dimensions of 34 ' mmx 36mmx 45mm and weight of 99g was successfully grown with the growth rate of 4. 5 mm / day in glass crystallizer of 1000ml in volume

    在1000ml生長瓶中獲得了生長速度達4 . 5mm day的點狀籽晶生長尺寸為34 36 45mm ~ 3 （ 99克）的優質dkdp晶體生長條件。
  15. Relationship between gem diamond quality and growth rate

    寶石級金剛石的生長速度與晶體品質的關系
  16. We article reviewed craftwork characteristic of growth yvo4 crystal by means of czochralski - cz. according to method of fimty - difference, we compiled field quantity estimate program ( fqep ) with vc + + that we can numerical simulate temperate - field and velocity - field while yvo4 dual - refractive optics crystal is growing

    本文對丘克拉斯基（ czochralskicz ）法生長yvo _ 4晶體的工藝特點進行了評述，根據有限差分的方法，用vc + +語言編寫了場量計算程序，對yvo _ 4雙折射光學晶體生長過程中的溫度場和速度場進行了數值模擬。
  17. The suitable temperature field, growth rate of the crystals and rotation rate were decided by a mount of experiment and theory analysis

    通過大量實驗並結合理論分析，設計了合適的溫場，適宜的提拉速度和旋轉速度等晶體生長的工藝參數。
  18. Xps shows that the crystal has elements w, k, yb, o, gd from the data of electron energy level and binding energy

    因此，若想生長質量優良的晶體，應盡量減少生長過程中的溫度、濃度及生長速度的波動，保持晶體的穩態生長。
  19. The growth mechanism of dkdp crystal was described by the formation, diffusion and adsorption of growth unit of dkdp crystal. the method of increasing the growth rate was discussed

    從dkdp晶體生長基元的形成、擴散、吸附等方面研究了dkdp晶體生長的微觀機制，提出了提高晶體生長速度的具體方法。
  20. It was found that doping rb + 、 cs + changed the morphology of ktp greatly. the speed of growth along a direction was so extremely slow that the length increased along a direction was n ' t obvious and the morphology looked like a slice. while doping ga3 + led the speed of growth along a direction to become faster, hence, the length along a direction become thicker

    發現分別摻rb + 、 cs +離子的ktp晶體生長習性發生很大改變，晶體a向生長速度極其緩慢， a向尺寸增加不大，晶體外形成片狀，而摻ga3 +離子的ktp晶體a向生長速度增大， a向尺寸變厚。
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