晶體硅 的英文怎麼說

中文拼音 [jīngtǐguī]
晶體硅 英文
csi
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Crystalline silicon photovoltaic array - on - site measurement of i - v characteristics

    晶體硅光伏pv方陣i - v特性的現場測量
  2. Preparing anti - reflective coating and hydrogen passivation are two key procedures in the process of high efficiency crystalline silicon solar cells

    減反射膜的制備和氫鈍化是制備高效率的晶體硅太陽電池的非常重要工序之一。
  3. It is described that the innovatory technology of selective diffusion and study on surface passivation in theory for crystalline silicon solar cell

    本文的主要內容是介紹晶體硅太陽電池選擇性擴散新工藝和表面鈍化的理論研究。
  4. In the third one we investigated the measure of minority carrier lifetime in silicon solar cells by the photo - induced open - circuit voltage decay ( ocvd )

    該部分研究對工業化生產具有參考價值。第三部分研究了採用開路電壓法測量晶體硅太陽電池的少子壽命。
  5. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  6. It was first discovered that open - circuit voltage decay in multicrystalline silicon solar cells is smaller than that of in monocrystalline silicon solar cells through electron irradiation, which is explained from electron irradiation mechanism and the structure of multicrystalline silicon solar cells and also has not been reported

    通過對晶體硅太陽電池電子輻照，首次發現多晶硅太陽電池的開路電壓衰減小於單晶硅太陽電池，從輻照機理和多晶硅太陽電池的結構解釋了該現象。本研究未見報道。
  7. Crystalline silicon terrestrial photovoltaic modules - design qualification and type approval

    地面用晶體硅光伏組件設計鑒定和定型
  8. Crystalline silicon terrestrial photovoltaic modules - design qualification and type approval iec 61215 : 2005 ; german version en 61215 : 2005

    地面用晶體硅光伏組件.設計鑒定和定型
  9. Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices

    晶體硅光伏器件的i v實測特性的溫度和輻照度修正方法
  10. Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices iec 60891 : 1987 a1 : 1992 ; german version en 60891 : 1994

    晶體硅光伏器件實測電流電壓特性的溫度和輻照度修正
  11. Solar cells - part 1 : datasheet informations and product data for crystalline silicon solar cells

    太陽能電池.第1部分:晶體硅太陽能電池的數據表單信息
  12. Crystalline silicon solar cells work well and are successfully used in the space program, where cost is not an issue

    晶體硅太陽能電池在宇航計劃上得到成功應用，因為在這類項目中，成本不成問題。
  13. Develops, manufactures and markets photovoltaic power products and systems providing renewable, wireless, solar power generation

    -主要生產非晶硅太陽能電池晶體硅太陽能電池組件光伏發電系統及應用產品。
  14. Crystalline silicon solar cells cost in excess of 100 per square foot, but amorphous films can be created at a cost of about 50 cents per square foot

    晶體硅太陽能電池每平方英尺造價超過1美元，而非晶形膜每平方英尺造價只有50美分。
  15. Currently, more than 80 % solar cells are made from crystalline silicon, so it is very important to develop high efficiency and low cost crystalline silicon solar cells

    目前， 80以上的太陽電池是由晶體硅材料制備而成的，制備高效率低成本的晶體硅太陽能電池對于大規模利用太陽能發電有著十分重要的意義。
  16. Preparation technology and status of research on crystalline silicon thin film solar cells

    晶體硅薄膜電池制備技術及研究現狀
  17. Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicone photovoltaic devices

    對晶體硅光電器件測量特性i - v的溫度修正和輻照度修正的方法
  18. Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing

    經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。
  19. Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis. after sioa surface passivation and forming gas treatment utilization in the scale manufacture, the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage, fill factor and efficiency improved

    本論文研究了提高晶體硅太陽電池效率規模化生產工藝技術的主要環節和相關機理，將sio _ 2表面鈍化、 forminggas處理用於規模化生產，降低了太陽電池的表面復合速度和串聯電阻，提高了開路電壓、填充因子和轉換效率。
  20. Because p - si is of more special characteristics, comparing to a - si and c - si, firstly, i set forth electrical features of p - si film and acknowledge profoundly electrical mechanism of p - si film. then three parameters of laser annealing, including laser frequency -, accepted - pulse - times and laser power density are studied how to influence crystallization of p - si

    因為多晶硅和非晶硅及晶體硅相比具有更獨特的特點，所以我們先闡述了多晶硅薄膜的電學特點，對多晶硅的導電機理有了深刻的了解；然後研究了激光頻率、受光次數和激光功率密度三個參數對晶化多晶硅的影響。
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