晶體管元件 的英文怎麼說

中文拼音 [jīngtǐguǎnyuánjiàn]
晶體管元件 英文
transistor element
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the entitative routing stage, the macro - cell layout must be compressed for optimization area and time delay. it should be compared beauty with the routing result by manual. an algorithm, which is gridless, variable widths and minimizing layer permutation, is advanced for channel region

    晶體管級實體布線階段，由於庫單元的復用性，要求庫單元版圖緊湊，即要求單元版圖在滿足各約束條件的前提下面積、性能優化程度較高，能與手工設計的版圖相媲美。
  2. Specification for harmonized system of quality assessment for electronic components - blank detail specification - ambient rated photocouplers with phototransistor output

    電子元器件質量評定協調體系規范.空白詳細規范.規定環境下有光電晶體管輸出的光電耦合器
  3. Specification for harmonized system of quality assessment for electronic components - blank detail specification - phototransistors, photodarlington transistors, phototransistor arrays

    電子元器件質量評定協調體系.空白詳細規范.光電晶體管光電復合晶體管光電晶體管陣列
  4. In 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories.

    確切地說，是在1948年，貝爾電話實驗室把一種新的元件晶體管公諸於世。
  5. Then, in 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories.

    確切地說，是在1948年，「貝爾電話實驗室」把一種新的元件--晶體管公諸於世。
  6. In 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories

    確切地說，是在1948年，貝爾電話實驗室把一種新的元件? ?晶體管公諸於世。
  7. Then, in 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories

    確切地說，是在1948年， 「貝爾電話實驗室」把一種新的元件- -晶體管公諸於世。
  8. In the paper, on the basis of research of static state and transient state in the scr and series connection valve circuit, the high voltage scr changing current valve device has been developed for ac - dc - ac high voltage commutatorless motor. the series connection valve circuit has been designed and simulated. the hardware design and software programming of trigger pulse system and monitoring system in the photo - electronic - photo fashion has been completed

    無換向器電動機在火電廠等工礦企業的電機調速節能領域中有十分廣闊的應用前景，本文在對晶閘管元件和串聯閥電路的靜態特性和動態特性研究的基礎上，研製了用於交直交電流型高壓無換向器電動機的高壓晶閘管換流閥裝置，進行了串聯閥電路的設計和模擬，完成了電光電方式的觸發脈沖系統和監測系統硬體設計及軟體編程，並進行了裝置的實驗調試。
  9. If you don ' t want a high bandwidth transistor to oscillate place lossy components in at least 2 of the 3 leads. ferrite beads work well

    如果你不想通過在高帶寬晶體管三個引腳中的至少兩個引腳放置損耗元件的方法消除振蕩。鐵氧體磁珠會起到很好的作用。
  10. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  11. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  12. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  13. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  14. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  15. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  16. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  17. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  18. Detail specification for electronic component. pn silicon unijunction transistors for type bt 37

    電子元器件詳細規范. bt37型pn硅單結晶體管
  19. Detail specification for electronic. component pn silicon unijunction transistors for type bt 32

    電子元器件詳細規范. bt32型pn硅單結晶體管
  20. Detail specification for electronic components. pn silicon unijunction transistors for type bt 33

    電子元器件詳細規范. bt33型pn硅單結晶體管
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