晶體管分析器 的英文怎麼說

中文拼音 [jīngtǐguǎnfēnxīqì]
晶體管分析器 英文
tra istor analyser
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 析 : Ⅰ動詞1. （分開; 散開） divide; separate 2. （分析） analyse; dissect; resolve Ⅱ名詞（姓氏） a surname
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. At the same time the principles of triggering pulse to the three - phase thyristors is discussed, and a way using monostable multivibrator to produce the pulses has been given below. the hardware control system based on tms320f240 is designed, which includes sampling circuit, protective circuit, phase - compensated circuit and so on

    對三相晶閘管控制電抗器的觸發脈沖產生原理進行了分析，採用單穩態觸發器實現六相觸發同步；設計了以tms320f240為控制核心的硬體控制平臺，包括采樣電路、保護電路、六相觸發同步等外圍電路。
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  3. With its new frame. modern technology, complex information dispose and unique control mode, it embodys an idea which is information centralized and control decentralized. its main advantage is system open and interchange and its frame is so simple that it can decrease producative. cost and maintenance load. as it is a new technology, there are different kind databus standards which adapt to different control area. this papaer firstly introduces field bus ' sframe work, function, type, compares distributed control system and field control system. then it focuses on introducing can protocol and can control chip sja1000 and can interface chip 82c250, at last, it introduces how to set up a typical automatic control model based on can. this model can be used in practical industrial control area and management area by appropriate change

    由於現場總線是一門新技術，有各種不同的總線標準和總線形式，它們適用於不同的領域，本論文首先分析現場總線的體系結構、功能、類型，比較集散控制系統與現場總線控制系統的區別，然後集中論述了其中的一種現場總線? ? can總線（ controllerareanetwork ） 。介紹了它的協議規范，並且介紹了現在比較流行的can控制器晶元sja1000和can介面晶元82c250 ，並在此基礎上，組建了一個典型的基於can總線的自動化模塊控制模型，把這個模型進行適當的改動就可以用於實際的工業控制領域和管理領域中。
  4. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  5. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  6. The control circuit of digitalized soft - starter with the three - phase ac voltage regulating was designed. the digital phase shifting trigger based on the 80c196kc mcs and gal16v8 programmable device was developed. the control method for digital phase shifting trigger was given and its principle of operation and designing was discussed

    設計了三相晶閘管交流調壓數字軟起動器的硬體控制電路；研製了採用80c196kc單片機和gal16v8可編程器件構成的數字移相觸發系統；給出了數字移相觸發控制方法，分析和討論了該方法的工作和設計原理；採用了一種參數自整定的混合型模糊pid控制方法。
  7. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  8. First of all, single port negative impedance oscillator is analyzed in the thesis. a design method of gunn diode vco is introduced and an vco chip using gunn diode is fabricated. the substrate of the vco chip is gaas with dimension of 4. 4mmx3. 9mm

    本文首先對單埠負阻振蕩器進行了分析，給出了gunn二極體負阻振蕩器的設計方法，設計出了一個變容管調諧平面微帶gunn二極體vco晶元，該晶元以gaas為襯底，尺寸為4 . 4mm 3 . 9mm 。
  9. Reactive power are calculated using the new algorithm. on the basis of analyzing different kinds of control strategies of var compensation, the paper applies the criterion of voltage and var to control switching and illustrates a improved mode of switching capacitor which can prevent the switched - capacitor from the impacting of instantaneous rush currents by means of zero - crossing triggering of scr components, and can realize auto - tracking var and auto - switching shunt capacitor bank. initial operating parameters are stored in information flash memory of the mcu using flash self - programming technique in order to decrease complexity of the circuit and improve stability

    高壓智能無功補償控制器以flash型16位單片機msp430f149為控制核心，採用了一種相角實時測量的新演算法，並在此基礎上計算出了功率因數、有功和無功，減少了運算量提高了精度；在分析了各種無功補償控制策略的基礎上，以母線電壓和無功功率復合判據控制投切，並提出一種改進的電容器投切方式? ?暫態投切控制晶閘管過零觸發，避免了電容器投切時的電流沖擊；穩態運行時接觸器替代晶閘管，實現無功補償的自動跟蹤和電容器的自動投切，解決了投切時的暫態電流沖擊和穩態時可靠運行的難題；控制器的原始運行參數採用flash自編程技術，將其保存在msp430f149片內的信息flash中，簡化了硬體電路，大大提高了系統的可靠性。
  10. And then, we analyze the nonlinear properties of limiting amplifier. due to the typical nonlinear properties of limiting amplifier, we studied the method of academic analysis for microwave nonlinear circuit and the nonlinear circuit model of transistor in detail

    由於微波限幅放大器的工作是典型的非線性特性，我們研究了非線性電路的分析方法和微波晶體管的非線性模型，詳細得介紹了諧波平衡法這種重要的非線性電路分析方法。
  11. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  12. In this article, the following is discussed : the realization of signal processing and data logging circuit, the design of optic - fiber sensors and under - well single transfer circuit. a laboratorial model is built to simulate multiphase - flow meter ' s working condition. finally, feasibility of the technical is proven by some examinations

    論文中主要討論了以dsp晶元為核心的多相流量計信號處理及數據記錄電路的設計、幾種應用於該種多相流量計的光纖傳感器的設計、傳感器信號變送傳輸電路設計、以及多相流組分與光折射率關系的推算，並設計油井管道模型模擬多相流體的流動，在此基礎上通過試驗初步分析和驗證了這種計量技術的可行性。
  13. 2. urease - based field effect transistor biosensor has been fabricated by the transfer of urease / amphiphile mixed langmuir films onto ion - sensitive field effect transistor ( isfet ). its function has been studied with isfet meter, and the intensity of output signals shows linear relationship with the logarithmic urea concentration from 0 to 20 mm

    用lb膜技術將脲酶兩親性分子混合langmuir膜轉移到離子敏感場效應晶體管（ isfet ）表面，製成了脲酶場效應晶體管生物傳感器；採用離子敏感場效應管特性測定儀對它的性能進行了分析。
  14. The effect of a few important geometrical and physical parameters which include the length of the active region, the thickness of the active region, bulk traps, interface traps, on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici

    摘要利用高級二維器件模擬程序medici分析了多晶矽薄膜晶體管有源區的長度、體內陷阱、界面陷阱、柵氧化層厚度等幾何參數及物理參數，並研究了這些參數對薄膜晶體管特性的影響。
  15. The display principle of thin film transistor liquid crystal display module ( tft - lcd module ) and its testing technology are discussed in this thesis

    論文分析了薄膜晶體管液晶顯示（ tft - lcd ）模塊的顯示原理及其測試技術，以液晶顯示器件驅動原理為基礎，利用arm晶元構建了tft - lcd模塊測試系統。
  16. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
  17. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
  18. Secondly, the multiplier circuit configuration is established with the designing thought of multiplier. thirdly, simulation and optimization of the detail practice multiplier circuits are operationed by using of hamonic balance analysis ( hb ) method in software ads. fourthly, passive quintupler using schottky diode and active doubler, tripler, quadrupler and quintupler using phemt are researched and developed, respectively

    本文的主要工作是先介紹分析倍頻器的基本原理，根據倍頻器的設計理念，建立電路拓撲結構，採用ads軟體並利用諧波平衡分析法對具體倍頻電路進行模擬優化，分別研製了無源肖特基二極體五次倍頻器以及有源phemt晶體管2 、 3 、 4 、 5次的各次倍頻器。
  19. Abstract : in this paper, by analyzing the key circuits of electronical rectification in an energy - saving lamp, the choie and design of power - switch transistor for energy - saring lamp and electronical rectification are put forward

    文摘:本文通過對節能燈中電子鎮流器關鍵線路的分析，介紹了節能燈電子鎮流器用功率開關晶體管的選擇和設計思路。
  20. The client program, the middle ware and the server program design are partially realized at the base of computer technology in the need of semiconductor device simulation and the partitioning of functional modules for the simulation system, then the discussion on the input parameters and the analysis for the output result are implemented

    探索了器件并行模擬系統所需的計算機技術和模擬系統的功能模塊劃分，並具體部分實現了客戶端程序設計、中間件設計和服務器端程序設計，運用它完成對晶體管的摻雜濃度分佈、電子和空穴濃度模擬，並對輸入參數進行了討論和計算結果輸出進行了分析。
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