晶體管增益 的英文怎麼說

中文拼音 [jīngtǐguǎnzēngyì]
晶體管增益 英文
transistor gain
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 益 : Ⅰ名詞1 （好處） benefit; profit; advantage 2 （姓氏） a surname Ⅱ形容詞（有益的） beneficialⅢ動詞...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. There are many adaptive changes in the two research subjects ( artemisia. songarica schrenk. and seriphidium. santolinum ( schrenk ) polijak. ) in morphology and anatomy, such as with the increase of the daily age, the root - shoots ratio increased ; the root became stronger ; the ratio of leaf volume and leaf area increased ; the volume of epidermic cell decreased ; the cut - icle and phellem layer on the surface of root thickened. stoma caved in leaf ; epidermal hair of leaf and stem well - developed, palisde tissue developed well, the cell gap decreased ; the spongy tissue disappeared ; leaf is kinds of isolateralthat is the typical xeromorphic structure ; crystal cell and fibric cell increased ; conducting tissue and mechanical tissue developed well ; bundle sheath appeared

    實驗研究的兩種菊科（ compositae ）植物（準噶爾沙蒿（ artemisiasongaricaschrenk ）和沙漠絹蒿（ seriphidiumsantolinum （ schrenk ） poljak . ） ） ，形態解剖方面的變化表現為：隨日齡增加，根長/株高比值日益增大；根系逐漸發達；體積與葉面積比逐漸增大；表皮細胞體積變小；角質層增厚；根外部出現加厚的木栓層；氣孔下陷；葉、莖部的表皮毛密布，柵欄組織日益發達；而細胞間隙日漸變小；海綿組織逐漸消失；葉面結構常為典型旱生結構? ?等葉面；晶細胞及纖維細胞數目增多；輸導組織、機械組織日漸發達；具有維管束鞘等等。
  2. Standard test method of measurement of common - emitter d - c current gain of junction transistors

    結型晶體管共射極直流增益測量的標準試驗方法
  3. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  4. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
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