晶體管結構 的英文怎麼說

中文拼音 [jīngtǐguǎnjiēgòu]
晶體管結構 英文
transistor arrangement
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  2. The trained neural network model can be used to solve a variety of problems emerged in rf / microwave circuit design, such as in microwave circuit cad, the established model structure can be used to characterize the nonlinear behavior of microwave circuits

    如用於微波電路cad ，可用所建立的模型結構來描述這么一類微波電路的非線性行為特徵；如用於微波電路設計，則可進行如共面波導、晶體管、傳輸線、濾波器和放大器等的設計；如用於微波電路優化，則可用所建立的電路模型優化電路參數，進行阻抗匹配等。
  3. With its new frame. modern technology, complex information dispose and unique control mode, it embodys an idea which is information centralized and control decentralized. its main advantage is system open and interchange and its frame is so simple that it can decrease producative. cost and maintenance load. as it is a new technology, there are different kind databus standards which adapt to different control area. this papaer firstly introduces field bus ' sframe work, function, type, compares distributed control system and field control system. then it focuses on introducing can protocol and can control chip sja1000 and can interface chip 82c250, at last, it introduces how to set up a typical automatic control model based on can. this model can be used in practical industrial control area and management area by appropriate change

    由於現場總線是一門新技術，有各種不同的總線標準和總線形式，它們適用於不同的領域，本論文首先分析現場總線的體系結構、功能、類型，比較集散控制系統與現場總線控制系統的區別，然後集中論述了其中的一種現場總線? ? can總線（ controllerareanetwork ） 。介紹了它的協議規范，並且介紹了現在比較流行的can控制器晶元sja1000和can介面晶元82c250 ，並在此基礎上，組建了一個典型的基於can總線的自動化模塊控制模型，把這個模型進行適當的改動就可以用於實際的工業控制領域和管理領域中。
  4. Simulation result shows that nearly 100 % breakdown voltage of the plane junction can be realized

    模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100 %達到平行平面結的理想值。
  5. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值
  6. It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the sio

    研究了場效應納電子晶體管構造過程中金屬電極的結構設計，源-漏電極高度sio
  7. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  8. For designing the microwave power amplifier formed by the chip of sige hbt more accurately, an novel method to extract chip s - parameter from s - parameter of packaged device with package is proposed

    為了更精確設計由sige異質結晶體管（ hbt ）管芯構成的微波功率放大器，本論文提出了一種新穎的從管殼封裝器件的s參數中提取出管芯s參數方法。
  9. Compared with the similar research results, the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e. g. 50mhz ), while in higher frequency they slightly deviate from 50, hence the energy reflection lower than 0. 1 ; ( 6 ) it completes the functions of sampling, weighting, controlling and summing of high frequency analog signals

    它的加權控制電路與已報道的相關電路相比具有如下特點：電路結構簡單；製造工藝與普通cmos工藝兼容：短溝道，高寬長比的nmos晶體管具有低的通導電阻，將其作為加權、輸出器件可降低由電路引起的插入損耗；改變加權信號，可實現權值在較大范圍內的連續變化；輸入、輸出阻抗在低頻（如50mhz ）下接近50 ，而在高頻下略有偏離50 ，但反射系數均低於0 . 1 ；實現了對高頻信號的取樣、加權、控制、疊加功能的迭加。
  10. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  11. Based on the photoelectron and microelectronics, communication and net technology has become the core of high - tech. as the main carriers of information technology, lasers and display devices play significant roles. compare to the inorganic semiconductors, the organic semiconductors have much advantages

    以多種工藝在硅基襯底和玻璃襯底上制備了不同結構的有機薄膜場效應晶體管（ otft ） ，論述了不同制備工藝的優缺點，以及器件結構對性能的影響。
  12. The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set, single electron memory, etc. ) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future

    納米結構的制備和納米電子器件（單電子晶體管、單電子存儲器等單電子器件）的研究是納米電子技術中最重要的研究內容之一，是最具有生命力、最具有發展前途，對未來新技術革命和產業可能帶來革命性作用的研究領域之一。
  13. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  14. A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices

    摘要提出一種二氧化矽多晶矽二氧化矽夾心深槽場限制環新結構來提高晶體管的擊穿電壓。
  15. Come the age of huge scale chip, the research on computer architecture faces new tasks : how to use numerous transistors

    在巨大規模晶元時代來臨的時候，體系結構的研究又遇到了新的課題：如何有效利用數目眾多的晶體管
  16. 2. in the first, the successfully fabricated si - based sets on p - type simox substrate are based on the process in china. the technology process is also offered for the controlled fabrication of single sets

    利用這些納米結構的制備技術，在p型simox矽片上成功地製造了硅量子點單電子晶體管，形成了一套制備硅單電子晶體管的工藝方法。
  17. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  18. With the pentacene acting as the active layer, the diode of ito / pentacene / al, the vertical organic thin - film field - effect transistor, the organic thin - film ambipolar field - effect transistor and the organic thin - film double - field - effect transistor are fabricated

    提出雙柵絕緣層結構全有機薄膜場效應晶體管，達到了減少器件柵的漏電流、降低器件工作電壓和提高器件工作電流的目的。
  19. Based on the design theory of power amplifier, a wide - band power amplifier was designed successfully by the push - pull transistor, the feedforward technical of linearization, the matching circuits of transmission line transformers and microstrip, and ads simulation software

    根據寬帶功率放大器的設計原理，採用推挽結構晶體管，前饋線性化技術，傳輸線變壓器和微帶混和匹配電路，利用ads進行模擬設計，成功的設計出一款寬帶功率放大器。
  20. 13. 5 ghz ft sige heterojunction bipolar transistor fabricated by planar technology

    Ft為13 . 5ghz的平面結構sige異質結雙極晶體管的研製
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